Patents by Inventor Alan C. Seabaugh

Alan C. Seabaugh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5415128
    Abstract: This invention describes a multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of A(x-.DELTA.x)B(1-(x-.DELTA.x))/A(x+.DELTA.x)B(1-(x+.DELTA.x) where .DELTA.x is a function of the nonuniform focusing of the elemental or molecular source fluxes A and B. More specifically, superlattices 18 are formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering. The superlattice 18 is formed by nonuniformly directing the group III elements 22 and 24 onto the substrate 26 and rotating the substrate 26 across the beams. Periodic ordering is produced by rotation of the substrate 26 through a nonuniform distribution of source fluxes at the rotating substrate 26. The growth rate and substrate rotation rate together determine the superlattice period.
    Type: Grant
    Filed: March 9, 1994
    Date of Patent: May 16, 1995
    Assignee: Texas Instruments Incorporated
    Inventors: Yung-Chung Kao, Hung-Yu Lin, Alan C. Seabaugh, James H. Luscombe
  • Patent number: 5408106
    Abstract: A lateral resonant tunneling transistor is provided comprising heterojunction barriers (24) and a quantized region (33). Current between source contact (26) and drain contact (28) can be switched "ON" or "OFF" by placing an appropriate voltage on gate contacts (30) and (32). The potential on gate contacts (30) and (32) selectively modulate the quantum states within quantized region (33) so as to allow electrons to tunnel through heterojunction barrier (24) and quantized region (33).
    Type: Grant
    Filed: May 2, 1994
    Date of Patent: April 18, 1995
    Assignee: Texas Instruments Incorporated
    Inventor: Alan C. Seabaugh
  • Patent number: 5234848
    Abstract: A lateral resonant tunneling transistor is provided comprising heterojunction barriers (24) and a quantized region (33). Current between source contact (26) and drain contact (28) can be switched "ON" or "OFF" by placing an appropriate voltage on gate contacts (30) and (32). The potential on gate contacts (30) and (32) selectively modulate the quantum states within quantized region (33) so as to allow electrons to tunnel through heterojunction barrier (24) and quantized region (33). The method for fabricating comprises etching trenches through second barrier layer (20) and quantum layer (76) and regrowing a semiconductor to form heterojunction barrier (24).
    Type: Grant
    Filed: November 5, 1991
    Date of Patent: August 10, 1993
    Assignee: Texas Instruments Incorporated
    Inventor: Alan C. Seabaugh
  • Patent number: 5179037
    Abstract: An epitaxial stack (10) is provided that allows integration of both vertical and horizontal quantum effect devices. Epitaxial stack (10) allows fabrication of both quantum well resonant tunneling transistors (27) and Stark-effect transistors (34), thus allowing for circuit integration of different quantum effect devices in the same epitaxial stack.
    Type: Grant
    Filed: December 24, 1991
    Date of Patent: January 12, 1993
    Assignee: Texas Instruments Incorporated
    Inventor: Alan C. Seabaugh
  • Patent number: 4373989
    Abstract: A controlled in situ etch-back technique is disclosed in which an etch melt 17 and a growth melt 18 are first saturated by a source-seed crystal 15 and thereafter etch-back of a substrate 14 takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.
    Type: Grant
    Filed: November 30, 1981
    Date of Patent: February 15, 1983
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, Robert J. Mattauch, Alan C. Seabaugh