Patents by Inventor Alan Colli
Alan Colli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150287787Abstract: In accordance with an example embodiment of the present invention, a device comprising one or more porous graphene layers, the or each graphene porous layer comprising a multiplicity of pores. The device may form at least part of a flexible and/or stretchable, and or transparent electronic device.Type: ApplicationFiled: April 15, 2015Publication date: October 8, 2015Inventors: Asta Maria Karkkainen, Samiul Md Haque, Alan Colli, Pirjo Marjaana Pasanen, Leo Mikko Karkkainen, Mikko Aleksi Uusitalo, Reijo Kalervo Lehtiniemi
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Publication number: 20150287904Abstract: An apparatus comprising:—a piezoelectric convertor layer; and—a proximal first piezoresistive layer being in electrical communication with, a first face of the piezoelectric convertor layer, the apparatus being configured such that when the piezoelectric convertor layer is deformed to generate charge, the proximal piezoresistive layer is configured to control the flow of charge from the piezoelectric convertor layer.Type: ApplicationFiled: October 5, 2012Publication date: October 8, 2015Applicant: Nokia Technologies OyInventors: Richard White, Alan Colli
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Patent number: 9153764Abstract: An apparatus including a piezoelectric substrate configured to propagate a surface acoustic wave; and a transducer, coupled to the piezoelectric substrate, including at least one graphene electrode configured to transduce a propagating surface acoustic wave to an electrical signal.Type: GrantFiled: March 8, 2011Date of Patent: October 6, 2015Assignee: Nokia Technologies OyInventor: Alan Colli
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Patent number: 9130085Abstract: An apparatus comprises a graphene film; a first arrangement of quantum dots of a first type located in contact with the graphene film as a first monolayer; a second arrangement of quantum dots of a second type located in contact with the graphene film as a second monolayer; an input voltage source connected to an end of the graphene film; and an output voltage probe connected to the graphene film between the first arrangement of quantum dots and the second arrangement of quantum dots.Type: GrantFiled: April 5, 2013Date of Patent: September 8, 2015Assignee: Nokia Technologies OyInventor: Alan Colli
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Patent number: 9035281Abstract: In accordance with an example embodiment of the present invention, a device comprising one or more porous graphene layers, the or each graphene porous layer comprising a multiplicity of pores. The device may form at least part of a flexible and/or stretchable, and or transparent electronic device.Type: GrantFiled: June 30, 2009Date of Patent: May 19, 2015Assignee: Nokia Technologies OyInventors: Asta Maria Kärkkäinen, Samiul Md Haque, Alan Colli, Pirjo Marjaana Pasanen, Leo Mikko Johannes Kärkkäinen, Mikko Aleksi Uusitalo, Reijo Kalervo Lehtiniemi
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Patent number: 8927964Abstract: Apparatus and methods are provided. A first apparatus includes: a semiconductor film; and at least one semiconductor nanostructure, including a heterojunction, configured to modulate the conductivity of the semiconductor film by causing photo-generated carriers to transfer into the semiconductor film from the at least one semiconductor nanostructure. A second apparatus includes: a semimetal film; and at least one semiconductor nanostructure, including a heterojunction, configured to generate carrier pairs in the semimetal film via resonant energy transfer, and configured to generate an external electric field for separating the generated carrier pairs in the semimetal film.Type: GrantFiled: November 20, 2012Date of Patent: January 6, 2015Assignee: Nokia CorporationInventors: Alan Colli, Tim J. Echtermeyer, Anna Eiden, Andrea C. Ferrari
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Publication number: 20140300251Abstract: An apparatus including a piezoelectric convertor layer; at least one piezoresistive layer on the piezoelectric convertor layer; and electrical conductor outputs. The at least one piezoresistive layer includes a plurality of spaced apart piezoresistive electrodes. The apparatus is configured such that when the piezoelectric convertor layer is deformed to generate a charge, at least one of the piezoresistive electrodes is stressed, where the at least one piezoresistive layer is configured to control flow of charge from the piezoelectric convertor layer. The electrical conductor outputs are electrically connected to the piezoresistive electrodes. The outputs are configured to allow the charge from the piezoelectric convertor layer to flow out of the piezoresistive electrodes.Type: ApplicationFiled: April 3, 2013Publication date: October 9, 2014Applicant: Nokia CorporationInventors: Alan COLLI, Richard White
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Publication number: 20140299741Abstract: An apparatus comprises a graphene film; a first arrangement of quantum dots of a first type located in contact with the graphene film as a first monolayer; a second arrangement of quantum dots of a second type located in contact with the graphene film as a second monolayer; an input voltage source connected to an end of the graphene film; and an output voltage probe connected to the graphene film between the first arrangement of quantum dots and the second arrangement of quantum dots.Type: ApplicationFiled: April 5, 2013Publication date: October 9, 2014Inventor: Alan Colli
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Patent number: 8785996Abstract: An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.Type: GrantFiled: August 13, 2010Date of Patent: July 22, 2014Assignee: Nokia CorporationInventors: Alan Colli, Richard White
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Publication number: 20140138622Abstract: Apparatus and methods are provided. A first apparatus includes: a semiconductor film; and at least one semiconductor nanostructure, including a heterojunction, configured to modulate the conductivity of the semiconductor film by causing photo-generated carriers to transfer into the semiconductor film from the at least one semiconductor nanostructure. A second apparatus includes: a semimetal film; and at least one semiconductor nanostructure, including a heterojunction, configured to generate carrier pairs in the semimetal film via resonant energy transfer, and configured to generate an external electric field for separating the generated carrier pairs in the semimetal film.Type: ApplicationFiled: November 20, 2012Publication date: May 22, 2014Applicant: Nokia CorporationInventors: Alan COLLI, Tim J. ECHTERMEYER, Anna EIDEN, Andrea C. FERRARI
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Patent number: 8610100Abstract: A method including: a) depositing a masking material over a substrate comprising silicon; b) removing the masking material using a first process that removes the masking material in preference to silicon; c) removing silicon using a second process that removes silicon in preference to the masking material; d) continuously repeating the sequence of steps a), b) and c) to control the creation of nanowires; and e) stopping repetition of the sequence of steps a), b) and c).Type: GrantFiled: June 30, 2009Date of Patent: December 17, 2013Assignee: Nokia CorporationInventors: Pritesh Hiralal, Alan Colli
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Patent number: 8513883Abstract: An example embodiment there is provided an electroluminescent device comprising: an electroluminescent component, a first piezoelectric component, an alpha electrode and a first beta electrode, the electroluminescent component being located between the alpha electrode and the first piezoelectric component, the first beta electrode being in electrical contact with the alpha electrode and in electrical contact with the first piezoelectric component, the alpha electrode, first beta electrode, first piezoelectric component, and electroluminescent component being configured to generate a potential difference across the electroluminescent component responsive to a mechanical stress applied to the first piezoelectric component.Type: GrantFiled: December 31, 2008Date of Patent: August 20, 2013Assignee: Nokia CorporationInventors: Zoran Radivojevic, Richard White, Alan Colli, Di Wei, Piers Andrew
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Publication number: 20130162333Abstract: An apparatus including first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material include graphene, and wherein the apparatus is configured such that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material.Type: ApplicationFiled: December 23, 2011Publication date: June 27, 2013Inventors: Alan COLLI, Shakil A. Awan, Antonio Lombardo, Tim J. Echtermeyer, Tero S. Kulmala, Andrea C. Ferrari
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Patent number: 8461571Abstract: In accordance with an example embodiment of the present invention, an apparatus including a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar includes a metal, the contact being configured to form an intrinsic field region in the graphene film, and wherein the apparatus is configured to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region.Type: GrantFiled: June 29, 2011Date of Patent: June 11, 2013Assignee: Nokia CorporationInventor: Alan Colli
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Patent number: 8368123Abstract: A sensor configured to sense an external event including: a first component having a first impedance that changes when the external event occurs and being connected between a reference voltage node and an output node wherein the output node is configured to provide, when the external event occurs, a feedback signal to the first component that further changes the first impedance and wherein the first component is a field effect transistor comprising: a gate formed from a conductive core of a nanowire and connected to the output node; a gate dielectric formed from an insulating shell of the nanowire; a source/drain electrode connected to the output node; a source/drain electrode connected to the reference node; and a channel extending between the source/drain electrodes.Type: GrantFiled: December 23, 2009Date of Patent: February 5, 2013Assignee: Nokia CorporationInventor: Alan Colli
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Publication number: 20130001514Abstract: In accordance with an example embodiment of the present invention, an apparatus including a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar includes a metal, the contact being configured to form an intrinsic field region in the graphene film, and wherein the apparatus is configured to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region.Type: ApplicationFiled: June 29, 2011Publication date: January 3, 2013Inventor: Alan COLLI
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Publication number: 20120228993Abstract: An apparatus including a piezoelectric substrate configured to propagate a surface acoustic wave; and a transducer, coupled to the piezoelectric substrate, including at least one graphene electrode configured to transduce a propagating surface acoustic wave to an electrical signal.Type: ApplicationFiled: March 8, 2011Publication date: September 13, 2012Inventor: Alan COLLI
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Patent number: 8232544Abstract: A method comprises applying a first electric field pulse to a nanowire comprising a channel and a charge trapping region configured to control conductivity of the channel, the first electric field pulse having a first polarity and a relatively large magnitude of integral of electric field during the pulse and, thereafter, applying at least one further electric field pulse to the nanowire, each further electric pulse having a second, opposite polarity and each respective further electric field pulse having a relatively small magnitude of integral of electric field during the pulse.Type: GrantFiled: April 4, 2008Date of Patent: July 31, 2012Assignee: Nokia CorporationInventor: Alan Colli
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Publication number: 20120038409Abstract: An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.Type: ApplicationFiled: August 13, 2010Publication date: February 16, 2012Inventors: Alan COLLI, Richard White
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Patent number: 8022393Abstract: The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a multi-layer substrate, and removing areas of the upper layer not covered by the mask in a nanowire lithography process. The mask includes two conductive terminals separated by a distance, and a nanowire in contact with the conductive terminals across the distance. The nanowire lithography may be carried out using a deep-reactive-ion-etching, which results in an integration of the nanowire mask and the underlying semiconductor layer to form a nanoscale semiconductor channel for the field effect transistor.Type: GrantFiled: July 29, 2008Date of Patent: September 20, 2011Assignee: Nokia CorporationInventor: Alan Colli