Abstract: Aspects of this disclosure relate to one or more particles that move within a container in response to a magnetic field. A measurement circuit is configured to output an indication of the magnetic field based on position of the one or more particles.

Abstract: Aspects of this disclosure relate to particles that can move in response to a magnetic field. A system can include a container, particles within the container, and a magnetic structure integrated with the container. The magnetic structure can magnetically interact with both an external magnetic field and the particles. Related methods are disclosed including magnetic field detection methods based on detection of particles within a container.

Abstract: Aspects of this disclosure relate to force based on movement of magnetically sensitive material. In embodiments, first magnetically sensitive material and second magnetically sensitive material can be in an initial position. According to such embodiments, one or more sensors to detect force based on relative position of the first magnetically sensitive material and the second magnetically sensitive in a second position. Related systems and methods for force detection are disclosed.

Abstract: Aspects of this disclosure relate to force based on a profile of magnetically sensitive material in a container. One or more sensors can detect the profile of the magnetically sensitive material, where the profile is associated with a force applied to the container. The profile includes magnetically sensitive material concentrated in one or more particular areas within the container. Related systems and methods for force detection are disclosed.

Abstract: Aspects of this disclosure relate to adjusting fluid flow using magnetically sensitive particles. Fluid can flow through an opening in a container. Magnetically sensitive particles can be confined within the container. A magnetic field can be applied to move the magnetically sensitive particles in the container to adjust flow of the fluid through the opening.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: A reference electrode of an electrochemical sensor includes a substrate having internal walls defining a well and a channel. The reference electrode includes a conductive element disposed in the substrate. The well extends from a first surface of a substrate towards a second surface of the substrate. The channel is within the substrate. The channel has a first end connected to the well and a second end that is in contact with the conductive element. The reference electrode may include an additional well that extends from the first surface towards the second surface. The additional well may be connected to the second end of the channel and may be in contact with the conductive element. The channel and the wells form a flow path of a conductive medium. The flow path may be coupled to an agitating element or heating element that promotes flow of the conductive medium.

Abstract: A reference electrode of an electrochemical sensor includes a substrate having well, a channel, and a conductive element therein. The well extends from a first surface of a substrate towards a second surface of the substrate. The channel is within the substrate. A longitudinal axis of the channel may be substantially perpendicular to a longitudinal axis of the well. The channel has a first end connected to the well and the conductive element is exposed to a second of the channel. The channel and the wells form a flow path of a conductive medium. A valve is coupled to the flow path and configured to control a flow of the conductive medium to the electrically conductive element through the flow path.

Abstract: A reference electrode of an electrochemical sensor includes a substrate having a well, a channel, and a conductive element. The well extends from a first surface of a substrate towards a second surface of the substrate. The channel is within the substrate. A longitudinal axis of the channel may be substantially perpendicular to a longitudinal axis of the well. The channel has a first end connected to the well and a second end that is in contact with the conductive element. The channel and the wells form a flow path of a conductive medium. The flow path may be coupled to a manipulating element such as an agitating element or heating element that promotes flow of the membrane.

Abstract: Aspects of this disclosure relate to systems that include a channel with at least one fluid in particle in fluid. The at least one particle can move along a defined path of the channel in response to a magnetic field. At least one structure is integrated with the channel, such as a sensor to generate an output signal related to the magnetic field or a magnetic structure to apply the magnetic field. Relates methods are also disclosed.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Abstract: Aspects of this disclosure relate to detecting temperature based on movement of one or more particles within a container. The container includes a medium material. Mobility of the one or more particles in the medium material changes in response to a change in temperature.

Abstract: A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: Aspects of this disclosure relate to one or more particles that move within a container in response to a magnetic field. A measurement circuit is configured to output an indication of the magnetic field based on position of the one or more particles.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.