Abstract: Articles and methods in which an electric field is used to actuate a material are generally described. Provided in one embodiment is a method including applying an electric field to a ceramic material. Applying the electric field to the ceramic material can transform the ceramic material from a first solid phase to a second distinct solid phase. The applied electric field is less than a breakdown electric field of the ceramic material, according to certain embodiments.

Abstract: Shape memory and pseudoelastic martensitic behavior is enabled by a structure in which there is provided a crystalline ceramic material that is capable of undergoing a reversible martensitic transformation and forming martensitic domains, during such martensitic transformation, that have an average elongated domain length. The ceramic material is configured as an oligocrystalline ceramic material structure having a total structural surface area that is greater than a total grain boundary area in the oligocrystalline ceramic material structure. The oligocrystalline ceramic material structure includes an oligocrystalline ceramic structural feature which has an extent that is less than the average elongated domain length of the crystalline ceramic material.

Abstract: Articles and methods in which an electric field is used to actuate a material are generally described. Provided in one embodiment is a method including applying an electric field to a ceramic material. Applying the electric field to the ceramic material can transform the ceramic material from a first solid phase to a second distinct solid phase. The applied electric field is less than a breakdown electric field of the ceramic material, according to certain embodiments.

Abstract: Shape memory and pseudoelastic martensitic behavior is enabled by a structure in which there is provided a crystalline ceramic material that is capable of undergoing a reversible martensitic transformation and forming martensitic domains, during such martensitic transformation, that have an elongated domain length. The ceramic material is configured as a ceramic material structure including a structural feature that is smaller than the elongated domain length of the ceramic material.

Abstract: Shape memory and pseudoelastic martensitic behavior is enabled by a structure in which there is provided a crystalline ceramic material that is capable of undergoing a reversible martensitic transformation and forming martensitic domains, during such martensitic transformation, that have an average elongated domain length. The ceramic material is configured as an oligocrystalline ceramic material structure having a total structural surface area that is greater than a total grain boundary area in the oligocrystalline ceramic material structure. The oligocrystalline ceramic material structure includes an oligocrystalline ceramic structural feature which has an extent that is less than the average elongated domain length of the crystalline ceramic material.

Abstract: Shape memory and pseudoelastic martensitic behavior is enabled by a structure in which there is provided a crystalline ceramic material that is capable of undergoing a reversible martensitic transformation and forming martensitic domains, during such martensitic transformation, that have an elongated domain length. The ceramic material is configured as a ceramic material structure including a structural feature that is smaller than the elongated domain length of the ceramic material.

Abstract: Coated articles and related methods are described. In some cases, the coated articles may exhibit high strength, hardness, brightness, abrasion resistance, corrosion resistance, and other desirable structural and functional properties. In some embodiments, the coatings may include an alloy, such as a nickel-tungsten alloy and/or metal oxides.

Abstract: Coated articles and related methods are described. In some cases, the coated articles may exhibit high strength, hardness, brightness, abrasion resistance, corrosion resistance, and other desirable structural and functional properties. In some embodiments, the coatings may include an alloy, such as a nickel-tungsten alloy and/or metal oxides.

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi

Abstract: A two camera over-the-belt optical character recognition (OCR) system for reading the destination addresses on parcels carried on a conveyor belt. The parcels bear an orientation defining fluorescent ink fiduciary mark that is typically stamped on the parcel in the same area as the destination address. The fiduciary mark is located approximately in the center of the destination address block and oriented in the same direction as the underlying destination address. The first camera, a low resolution CCD camera, captures an image of the fiduciary mark. A host computer stores an image of the fiduciary mark, determines the position and orientation of the fiduciary mark, and defines a region of interest about the fiduciary mark. The second camera, a high resolution CCD camera, captures a grey-scale image of the conveyor and the parcels carried on the conveyor.