Abstract: The present invention provides biomimetic sensor devices that utilize proteins—such G-protein coupled receptors—and are useful in high-sensitivity analysis of analyte-containing samples. These sensors may be used to determine the presence or concentration of one or more analytes in a sample. The invention also includes methods of fabricating the devices and methods of using the devices to assay samples.

Abstract: The present invention provides biomimetic sensor devices that utilize proteins—such as G-protein coupled receptors—and are useful in high-sensitivity analysis of analyte-containing samples. These sensors may be used to determine the presence or concentration of one or more analytes in a sample. The invention also includes methods of fabricating the devices and methods of using the devices to assay samples.

Abstract: Methods for the fabrication of nanostructures, including nanostructures comprised of carbon nanotubes, and the nanostructures, devices, and assemblies prepared by these methods, are described.

Abstract: Disclosed are devices that comprise a protein, such as an antibody, placed into electronic communication with a semiconductor material, such as a carbon nanotube. The devices are useful in assessing the presence or concentration of analytes contacted to the devices, including the presence of markers for prostate cancer and Lyme disease.

Abstract: The present invention provides biomimetic sensor devices that utilize proteins—such as G-protein coupled receptors—and are useful in high-sensitivity analysis of analyte-containing samples. These sensors may be used to determine the presence or concentration of one or more analytes in a sample. The invention also includes methods of fabricating the devices and methods of using the devices to assay samples.

Abstract: Disclosed are devices comprising multiple nanogaps having a separation of less than about 5 nm. Also disclosed are methods for fabricating these devices.

Abstract: Provided are devices and methods featuring a nanoelectronic interface between graphene devices (for example, field effect transistors or FETs) and biomolecules such as proteins, which in turn provides a pathway for production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. In one exemplary application, one may functionalize graphene FETs with fluorescent proteins to yield hybrids that respond to light at wavelengths defined by the optical absorption spectrum of the protein. The devices may also include graphene in electronic communication with a biomolecule that preferentially binds to a particular analyte.

Abstract: Chemical field effect sensors comprising nanotube field effect devices having biopolymers such as single stranded DNA or RNA functionally adsorbed to the nanotubes are provided. Also included are arrays comprising the sensors and methods of using the devices to detect volatile compounds.

Abstract: Methods for the fabrication of nanostructures, including nanostructures comprised of carbon nanotubes, and the nanostructures, devices, and assemblies prepared by these methods, are described.

Abstract: Disclosed are atomically precise nanoribbons formed by gradient-driven catalytic etching of crystalline substrates to produce edges formed along specific crystallographic axes by thermally-activated particles. Also provided are related methods for fabrication of these nanoribbon structures. Further provided are devices and related methods for power generation and for detection of specific targets using the disclosed structures.

Abstract: Chemical field effect sensors comprising nanotube field effect devices having biopolymers such as single stranded DNA functionally adsorbed to the nanotubes are provided. Also included are arrays comprising the sensors and methods of using the devices to detect volatile compounds.

Abstract: Disclosed are copolymers of carbon nanotubes, as well as processes and applications of carbon nanotube dispersions. Carbon nanotube emulsions and related technology are also disclosed. The controlled deposition of carbon nanotubes on substrates is also provided. Methods of purifying single-walled carbon nanotubes are also provided. Devices made according to the disclosed methods are further described herein.

Abstract: Disclosed are devices comprising multiple nanogaps having a separation of less than about 5 nm. Also disclosed are methods for fabricating these devices.

Abstract: Chemical field effect sensors comprising nanotube field effect devices having biopolymers such as single stranded DNA or RNA functionally adsorbed to the nanotubes are provided. Also included are arrays comprising the sensors and methods of using the devices to detect volatile compounds.

Abstract: A shadow mask method to fabricate electrodes with nanometer scale separation utilizes nanotubes (NTs). Metal wires with gaps are made by incorporating multi-wall carbon nanotubes (MWNTs) or single-wall carbon nanotubes (SWNTs) (or bundles thereof) into a tri-layer electron beam lithography process. The simple, highly controllable, and scaleable method can be used to make gaps with widths between 1 and 100 nm. Electronic transport measurements performed on individual SWNTs bridge nanogaps smaller than 30 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. Semiconducting SWNTs show an anomalous field effect transistor behavior.

Abstract: A shadow mask method to fabricate electrodes with nanometer scale separation utilizes nanotubes (NTs). Metal wires with gaps are made by incorporating multi-wall carbon nanotubes (MWNTs) or single-wall carbon nanotubes (SWNTs) (or bundles thereof) into a tri-layer electron beam lithography process. The simple, highly controllable, and scaleable method can be used to make gaps with widths between 1 and 100 nm. Electronic transport measurements performed on individual SWNTs bridge nanogaps smaller than 30 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. Semiconducting SWNTs show an anomalous field effect transistor behavior.