Patents by Inventor Albert Liao
Albert Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888019Abstract: Some embodiments include a ferroelectric device having a ferroelectric insulative material which includes zinc. Some embodiments include a capacitor having a ferroelectric insulative material between a first electrode and a second electrode. The ferroelectric insulative material includes one or more metal-oxide-containing layers and one or more zinc-containing layers. Some embodiments include a memory array having a first set of first conductive structures and a second set of second conductive structures. The first conductive structures are coupled with driver circuitry, and the second conductive structures are coupled with sensing circuitry. The memory array includes an array of access devices. Each of the access devices is uniquely addressed by one of the first conductive structures in combination with one of the second conductive structures. Ferroelectric capacitors are coupled with the access devices. Each of the ferroelectric capacitors includes ferroelectric insulative material having zinc.Type: GrantFiled: December 17, 2020Date of Patent: January 30, 2024Assignee: Micron Technology, Inc.Inventors: Mikhail A. Treger, Albert Liao
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Patent number: 11871582Abstract: A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.Type: GrantFiled: January 31, 2022Date of Patent: January 9, 2024Assignee: Micron Technology, Inc.Inventors: Hung-Wei Liu, Vassil N. Antonov, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar, Masihhur R. Laskar, Albert Liao, Xue-Feng Lin, Manuj Nahar, Irina V. Vasilyeva
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Publication number: 20230395690Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.Type: ApplicationFiled: August 18, 2023Publication date: December 7, 2023Applicant: Micron Technology, Inc.Inventors: Albert Liao, Manzar Siddik
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Patent number: 11825662Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.Type: GrantFiled: July 16, 2021Date of Patent: November 21, 2023Assignee: Micron Technology, Inc.Inventors: Clement Jacob, Vassil N. Antonov, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy
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Patent number: 11769816Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.Type: GrantFiled: October 25, 2022Date of Patent: September 26, 2023Assignee: Micron Technology, Inc.Inventors: Albert Liao, Manzar Siddik
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Patent number: 11753645Abstract: The present disclosure relates to aptamers, polynucleotides, and nuclei acid molecules, which include a polynucleotide sequence capable of specifically binding polypeptides participating in M. hyopneumoniae infection. Also provided are methods of using nucleic acid molecules, polynucleotides and synthetic antibodies directed there against for detection, treating and neutralization of M. hyopneumoniae infection.Type: GrantFiled: March 3, 2022Date of Patent: September 12, 2023Assignee: AEROVIRUS TECHNOLOGIES INC.Inventors: Norman J Marchand, Thomas G Caltagirone, Albert Liao
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Publication number: 20230045210Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.Type: ApplicationFiled: October 25, 2022Publication date: February 9, 2023Applicant: Micron Technology, Inc.Inventors: Albert Liao, Manzar Siddik
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Patent number: 11515396Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.Type: GrantFiled: February 5, 2021Date of Patent: November 29, 2022Assignee: Micron Technology, Inc.Inventors: Albert Liao, Manzar Siddik
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Publication number: 20220351768Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.Type: ApplicationFiled: July 12, 2022Publication date: November 3, 2022Inventors: Albert Liao, Wayne I. Kinney, Yi Fang Lee, Manzar Siddik
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Patent number: 11396655Abstract: The present invention relates to aptamers, polynucleotides, and nucleic acid molecules, which include a polynucleotide sequence capable of specifically binding polypeptides participating in M. hyopneumoniae infection. Also provided are methods of using nucleic acid molecules, polynucleotides and synthetic antibodies directed there against for detection, treating and neutralization of M. hyopneumoniae infection.Type: GrantFiled: August 30, 2017Date of Patent: July 26, 2022Inventors: Norman J Marchand, Thomas G Caltagirone, Albert Liao
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Patent number: 11398263Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.Type: GrantFiled: July 15, 2020Date of Patent: July 26, 2022Assignee: Micron Technology, Inc.Inventors: Albert Liao, Wayne I. Kinney, Yi Fang Lee, Manzar Siddik
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Publication number: 20220199757Abstract: Some embodiments include a ferroelectric device having a ferroelectric insulative material which includes zinc. Some embodiments include a capacitor having a ferroelectric insulative material between a first electrode and a second electrode. The ferroelectric insulative material includes one or more metal-oxide-containing layers and one or more zinc-containing layers. Some embodiments include a memory array having a first set of first conductive structures and a second set of second conductive structures. The first conductive structures are coupled with driver circuitry, and the second conductive structures are coupled with sensing circuitry. The memory array includes an array of access devices. Each of the access devices is uniquely addressed by one of the first conductive structures in combination with one of the second conductive structures. Ferroelectric capacitors are coupled with the access devices. Each of the ferroelectric capacitors includes ferroelectric insulative material having zinc.Type: ApplicationFiled: December 17, 2020Publication date: June 23, 2022Applicant: Micron Technology, Inc.Inventors: Mikhail A. Treger, Albert Liao
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Publication number: 20220186225Abstract: The present disclosure relates to aptamers, polynucleotides, and nuclei acid molecules, which include a polynucleotide sequence capable of specifically binding polypeptides participating in M. Hyopneumoniae infection. Also provided are methods of using nucleic acid molecules, polynucleotides and synthetic antibodies directed there against for detection, treating and neutralization of M. Hyopneumoniae infection.Type: ApplicationFiled: March 3, 2022Publication date: June 16, 2022Inventors: Norman J MARCHAND, Thomas G CALTAGIRONE, Albert Liao
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Publication number: 20220157837Abstract: A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.Type: ApplicationFiled: January 31, 2022Publication date: May 19, 2022Applicant: Micron Technology, Inc.Inventors: Hung-Wei Liu, Vassil N, Antonov, Ashonita A. Chavan, Darwin Franseda Fan, Jeffrey B. Hull, Anish A. Khandekar, Masihhur R. Laskar, Albert Liao, Xue-Feng Lin, Manuj Nahar, Irina V. Vasilyeva
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Publication number: 20220093617Abstract: A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.Type: ApplicationFiled: September 21, 2020Publication date: March 24, 2022Applicant: Micron Technology, Inc.Inventors: Hung-Wei Liu, Vassil N. Antonov, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar, Masihhur R. Laskar, Albert Liao, Xue-Feng Lin, Manuj Nahar, Irina V. Vasilyeva
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Patent number: 11264395Abstract: A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.Type: GrantFiled: September 21, 2020Date of Patent: March 1, 2022Assignee: Micron Technology, Inc.Inventors: Hung-Wei Liu, Vassil N. Antonov, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar, Masihhur R. Laskar, Albert Liao, Xue-Feng Lin, Manuj Nahar, Irina V. Vasilyeva
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Publication number: 20210343732Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.Type: ApplicationFiled: July 16, 2021Publication date: November 4, 2021Applicant: Micron Technology, Inc.Inventors: Clement Jacob, Vassil N. Antonov, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy
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Patent number: 11101274Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir. Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb. Other aspects, including method, are disclosed.Type: GrantFiled: December 5, 2019Date of Patent: August 24, 2021Assignee: Micron Technology, Inc.Inventors: Clement Jacob, Vassil N. Antonov, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy
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Publication number: 20210175239Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb. Other aspects, including method, are disclosed.Type: ApplicationFiled: December 5, 2019Publication date: June 10, 2021Applicant: Micron Technology, Inc.Inventors: Clement Jacob, Vassil N. Antonov, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy
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Publication number: 20210159320Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.Type: ApplicationFiled: February 5, 2021Publication date: May 27, 2021Applicant: Micron Technology, Inc.Inventors: Albert Liao, Manzar Siddik