Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.

Abstract: Aptamers, polynucleotides which participate in preventing the Porcine Respiratory and Reproductive Syndrome virus (PRRSV) infection of cells, and nucleic acid molecules, which include a polynucleotide sequence capable of specifically binding the polypeptides domain of the PRRSV that controls infection, constitute the core of the present invention. Also provided are methods of using such nucleic acid molecules, polynucleotides and synthetic antibodies directed against these, for detection, treating and neutralization of PRRSV infection.

Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: The present invention relates to aptamers, polynucleotides, and nucleic acid molecules, which include a polynucleotide sequence capable of specifically binding polypeptides participating in M. Hyopneumoniae infection. Also provided are methods of using nucleic acid molecules, polynucleotides and synthetic antibodies directed there against for detection, treating and neutralization of M. Hyopneumoniae infection.

Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: Aptamers, polynucleotides which participate in preventing the Porcine Respiratory and Reproductive Syndrome virus (PRRSV) infection of cells, and nucleic acid molecules, which include a polynucleotide sequence capable of specifically binding the polypeptides domain of the PRRSV that controls infection, constitute the core of the present invention. Also provided are methods of using such nucleic acid molecules, polynucleotides and synthetic antibodies directed against these, for detection, treating and neutralization of PRRSV infection.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: The present invention provides compositions and methods for detecting mutations in the proto-oncogene Met.

Abstract: The present invention provides compositions and methods for detecting mutations in the proto-oncogene Met.

Abstract: An improved structure of a side rail of an advertising panel includes a framework having four liftable side rails and four corner pedestals for connecting with these four side rails, and the corner pedestal is hollow and the L-shaped side of the corner pedestal is an opening. With this arrangements, these corner pedestals of the advertising panel are possible simply by lifting these side rails easily to change an advertising board fast and the latter is therefore more convenient for use to lift.