Patents by Inventor Albert Wang

Albert Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming silicon/silicon-germanium heterojunction bipolar transistor
    Patent number: 5633179
    Abstract: A heterojunction bipolar transistor. An active region is defined on a silicon collector layer. A silicon-germanium base layer characterized by an integral polycrystalline and epitaxial structure is deposited over the collector such that the epitaxial portion of the base covers substantially the entire active region of the collector. In one version, a field oxide region separates the polycrystalline part of the base layer from the remainder of the collector layer. Alternatively, the collector layer is also characterized by an integral polycrystalline and epitaxial structure; in this version the epitaxial part of the base overlies the epitaxial part of the collector.
    Type: Grant
    Filed: October 11, 1994
    Date of Patent: May 27, 1997
    Inventors: Theodore I. Kamins, Albert Wang