Abstract: An emitter array may comprise a plurality of vertical-emitting devices. The plurality of vertical-emitting devices may be in a two-dimensional pattern of vertical-emitting devices. The emitter array may further comprise a plurality of electrical contacts on a surface of the emitter array. Each of the plurality of electrical contacts may be co-located with and electrically connected to a corresponding vertical-emitting device of the plurality of vertical-emitting devices. The plurality of electrical contacts may provide mechanical support over the plurality of vertical-emitting devices. The plurality of electrical contacts may extend to approximately a same height. A subset of the plurality of vertical-emitting devices may be powered via a corresponding subset of the plurality of electrical contacts.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a doped substrate layer. The VCSEL array may comprise a plurality of VCSELs on the doped substrate layer. The VCSEL array may comprise a buffer structure between the doped substrate layer and the plurality of VCSELs. The buffer structure, or a combination of the buffer structure and a layer of the plurality of VCSELs, may provide electrical isolation from the plurality of VCSELs to the doped substrate layer. The VCSEL array may comprise an isolation structure between adjacent VCSELs of the plurality of VCSELs. The isolation structure may provide electrical isolation between a first VCSEL, of the adjacent VCSELs, and a second VCSEL of the adjacent VCSELs. The first VCSEL and the second VCSEL may be different VCSELs.

Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.

Abstract: In some implementations, a VCSEL array may include a plurality of VCSELs that each operates concurrently and emits light at a same wavelength. A first distance between a first pair of adjacent VCSELs, of the plurality of VCSELs, may be different from a second distance between a second pair of adjacent VCSELs of the plurality of VCSELs. The first pair of adjacent VCSELs may be located closer to a center of the VCSEL array than the second pair of adjacent VCSELs. At least one of temperature non-uniformity or optical power non-uniformity among the plurality of VCSELs may be reduced as compared to another VCSEL array, with a same physical footprint as the VCSEL array, comprising uniformly spaced VCSELs.

Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.

Abstract: In some implementations, a VCSEL array may include a plurality of VCSELs that each operates concurrently and emits light at a same wavelength. A first distance between a first pair of adjacent VCSELs, of the plurality of VCSELs, may be different from a second distance between a second pair of adjacent VCSELs of the plurality of VCSELs. The first pair of adjacent VCSELs may be located closer to a center of the VCSEL array than the second pair of adjacent VCSELs. At least one of temperature non-uniformity or optical power non-uniformity among the plurality of VCSELs may be reduced as compared to another VCSEL array, with a same physical footprint as the VCSEL array, comprising uniformly spaced VCSELs.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a doped substrate layer. The VCSEL array may comprise a plurality of VCSELs on the doped substrate layer. The VCSEL array may comprise a buffer structure between the doped substrate layer and the plurality of VCSELs. The buffer structure, or a combination of the buffer structure and a layer of the plurality of VCSELs, may provide electrical isolation from the plurality of VCSELs to the doped substrate layer. The VCSEL array may comprise an isolation structure between adjacent VCSELs of the plurality of VCSELs. The isolation structure may provide electrical isolation between a first VCSEL, of the adjacent VCSELs, and a second VCSEL of the adjacent VCSELs. The first VCSEL and the second VCSEL may be different VCSELs.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a plurality of VCSELs, a plurality of structures extending from a surface of the VCSEL array, and one or more metallization layers electrically connecting to one or more VCSELs of the plurality of VCSELs. The one or more metallization layers may include portions over the plurality of structures. The portions over the plurality of structures may extend to a height that is greater than other features on the surface of the VCSEL array. When the VCSEL array is on a submount, the plurality of structures may mechanically support the VCSEL array and to prevent the other features on the surface of the VCSEL array from contacting the submount.

Abstract: In some implementations, a VCSEL array may include a plurality of VCSELs that each operates concurrently and emits light at a same wavelength. A first distance between a first pair of adjacent VCSELs, of the plurality of VCSELs, may be different from a second distance between a second pair of adjacent VCSELs of the plurality of VCSELs. The first pair of adjacent VCSELs may be located closer to a center of the VCSEL array than the second pair of adjacent VCSELs. At least one of temperature non-uniformity or optical power non-uniformity among the plurality of VCSELs may be reduced as compared to another VCSEL array, with a same physical footprint as the VCSEL array, comprising uniformly spaced VCSELs.

Abstract: An emitter array may comprise a plurality of vertical-emitting devices. The plurality of vertical-emitting devices may be in a two-dimensional pattern of vertical-emitting devices. The emitter array may further comprise a plurality of electrical contacts on a surface of the emitter array. Each of the plurality of electrical contacts may be co-located with and electrically connected to a corresponding vertical-emitting device of the plurality of vertical-emitting devices. The plurality of electrical contacts may provide mechanical support over the plurality of vertical-emitting devices. The plurality of electrical contacts may extend to approximately a same height. A subset of the plurality of vertical-emitting devices may be powered via a corresponding subset of the plurality of electrical contacts.

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include an active layer, a first mirror, a second mirror, and one or more oxidation layers. The active layer may be between the first mirror and the second mirror, and the one or more oxidation layers may be proximate to the active layer. The one or more oxidation layers may be configured to control beam divergence of a laser beam emitted by the VCSEL based on at least one of: a quantity of the one or more oxidation layers, a shape of the one or more oxidation layers, a thickness of the one or more oxidation layers, or a proximity of the one or more oxidation layers to the active layer.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a doped substrate layer. The VCSEL array may comprise a plurality of VCSELs on the doped substrate layer. The VCSEL array may comprise a buffer structure between the doped substrate layer and the plurality of VCSELs. The buffer structure, or a combination of the buffer structure and a layer of the plurality of VCSELs, may provide electrical isolation from the plurality of VCSELs to the doped substrate layer. The VCSEL array may comprise an isolation structure between adjacent VCSELs of the plurality of VCSELs. The isolation structure may provide electrical isolation between a first VCSEL, of the adjacent VCSELs, and a second VCSEL of the adjacent VCSELs. The first VCSEL and the second VCSEL may be different VCSELs.

Abstract: In some implementations, a method may include introducing oxygen into a furnace that contains a vertical stack of horizontal wafers. The oxygen may enter the furnace at a location above the vertical stack. A patterned wafer, included in the vertical stack, may include one or more surface features, and a surface feature, of the one or more surface features, may include one or more layers capable of being oxidize. The method may include causing lateral oxidation of at least one layer, of the one or more layers, based on introducing the oxygen into the furnace.

Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.

Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.

Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.

Abstract: A cooling system is provided. The cooling system includes a first heat exchanger and a second heat exchanger. The first heat exchanger has a first chamber and a second chamber. A plurality of tubes is provided in the first heat exchanger such that the tubes are in fluid communication with the first chamber and the second chamber. The tubes are arranged in a plurality of rows. A baffle is located in the second chamber. The baffle divides the second chamber into a first region and a second region. The first region of the second chamber is in fluid communication with at least one row of tubes. Further, an outlet is provided in fluid communication with the first region. The second heat exchanger includes an inlet in communication with the outlet of the first region.

Abstract: A fiber optic communications cable for providing a short range, high speed data communications link between information system units, including an optical fiber with an integral housing at each end having an electrical connector extending from the housing and adapted to mate with a corresponding electrical connector on an external information system unit for transferring an information signal between the cable and the unit. A signal converter in the integral housing's converts the information signal between an electrical signal and a corresponding optical signal.

Abstract: A fiber optic communications cable for providing a short range, high speed data communications link between information system units, including an optical fiber with an integral housing at each end having an electrical connector extending from the housing and adapted to mate with a corresponding electrical connector on an external information system unit for transferring an information signal between the cable and the unit. A signal converter in the integral housing's converts the information signal between an electrical signal and a corresponding optical signal.

Abstract: An integrated packaging system that comprises an integral mechanical support, a printed circuit board and the optical communications device. The mechanical support includes a first support element and a second support element. The first support element extends at a non-zero angle from the second support element. The printed circuit board includes a first portion and a second portion in contact with the first support element and the second support element, respectively. The optical communications device is mechanically coupled to the first support element of the mechanical support and is electrically connected to the first portion of the printed circuit board. The integrated packaging system preferably provides automatic alignment between the optical communications device and one or both of an optical element and an optical fiber. In this case, the first support element includes a device alignment feature.