Abstract: Broadly speaking, the present techniques exploit the properties of correlated electron materials for artificial neural networks and neuromorphic computing. In particular, the present techniques provide apparatuses/devices that comprise at least one correlated electron switch (CES) element and which may be used as, or to form, an artificial neuron or an artificial synapse.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.

Abstract: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

Abstract: Methods are disclosed herein for controlling the switching characteristics of correlated electron material (CEM) switching devices. The methods comprise one or more of controlling a density of grain boundaries in the CEM layer, controlling an open pore porosity in the CEM layer and controlling a surface area of exposed surfaces of the CEM layer during the fabrication of the CEM switching devices.

Abstract: In one embodiment, reinforced soil is assessed using a non-contact method including positioning a reference electrode in close proximity to a surface of the soil without contacting the electrode to the soil surface, vibrating the electrode with a vibration generator, and measuring an electrical potential difference between the electrode and the soil surface, the potential difference being indicative of the condition of a portion of a reinforcement member positioned below the soil surface at the location of the electrode.

Abstract: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

Abstract: A correlated electron material device is described to comprise a conductive substrate and a layer of a correlated electron material disposed over the conductive substrate. The layer of correlated electron material may comprise a metal rich transition or other metal compound, and at least a portion of anion vacancies within the metal rich transition or other metal compound are occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal compound. Under certain conditions, the electron back-donating extrinsic ligand occupying anion vacancies may be activated so as to impart particular switching characteristics in the correlated electron material device.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In particular embodiments, formation of a CEM device may include application of rapid thermal annealing to doped layers of a metal oxide.

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Abstract: Exemplary deployable sheet material systems may be configured to stow and deploy sheet material. The systems may include one or more masts, one or more extendable booms, and one or more guys wires configured to function in conjunction with each other to deploy the sheet material and then to maintain the sheet material in the deployed configuration.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.