Abstract: Briefly, embodiments of claimed subject matter relate to devices and methods for formation of ferroelectric materials utilizing transition metals, transition metal oxides, post transition metals, and/or post transition metal oxides, which may be doped with bismuth (Bi) in a concentration of between about 0.001% to about 25.0%. Alternatively, a dopant may include bismuth oxide (Bi2O3) or may include bismuth aluminum oxide ((BixAl1?x)2O3). In particular embodiments, such utilization of bismuth and/or related dopants may bring about stabilization of relatively thin ferroelectric devices.

Abstract: A correlated electron material device is described to comprise a conductive substrate and a layer of a correlated electron material disposed over the conductive substrate. The layer of correlated electron material may comprise a metal rich transition or other metal compound, and at least a portion of anion vacancies within the metal rich transition or other metal compound are occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal compound. Under certain conditions, the electron back-donating extrinsic ligand occupying anion vacancies may be activated so as to impart particular switching characteristics in the correlated electron material device.

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a correlated electron material. In embodiments, processes are described which may be useful for avoiding a resistive layer which tends to form between the correlated electron material and a conductive substrate and/or overlay.

Abstract: A method for the manufacture of a correlated electron material device which method comprises forming a conductive substrate and forming a layer of a correlated electron material on the conductive substrate, wherein the forming of the correlated electron material layer comprises: forming a layer of a metal rich transition or other metal compound; and annealing the layer of the metal rich transition or other metal compound in an atmosphere containing a gaseous precursor for an electron-back donating extrinsic ligand capable of occupying an anion vacancy within the transition or other metal compound; wherein the annealing provides that an anion vacancy within the transition or other metal compound is occupied by an electron back-donating extrinsic ligand; and wherein the annealing is carried out at a predetermined temperature and for a predetermined time whereby to activate electron back-donation from a transition or other metal cation to the electron back-donating extrinsic ligand occupying the anion vacancy

Abstract: Exemplary deployable sheet material systems may be configured to stow and deploy sheet material. The systems may include one or more masts, one or more extendable booms, and one or more guys wires configured to function in conjunction with each other to deploy the sheet material and then to maintain the sheet material in the deployed configuration.

Abstract: A method for the manufacture of a correlated electron material device which method comprises forming a conductive substrate and forming a layer of a correlated electron material on the conductive substrate, wherein the forming of the correlated electron material layer comprises: forming a layer of a metal rich transition or other metal compound; and annealing the layer of the metal rich transition or other metal compound in an atmosphere containing a gaseous precursor for an electron-back donating extrinsic ligand capable of occupying an anion vacancy within the transition or other metal compound; wherein the annealing provides that an anion vacancy within the transition or other metal compound is occupied by an electron back-donating extrinsic ligand; and wherein the annealing is carried out at a predetermined temperature and for a predetermined time whereby to activate electron back-donation from a transition or other metal cation to the electron back-donating extrinsic ligand occupying the anion vacancy

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Abstract: Exemplary deployable sheet material systems may be configured to stow and deploy sheet material. The systems may include one or more masts, one or more extendable booms, and one or more guys wires configured to function in conjunction with each other to deploy the sheet material and then to maintain the sheet material in the deployed configuration.

Abstract: Broadly speaking, the present techniques exploit the properties of correlated electron materials for artificial neural networks and neuromorphic computing. In particular, the present techniques provide apparatuses/devices that comprise at least one correlated electron switch (CES) element and which may be used as, or to form, an artificial neuron or an artificial synapse.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Abstract: In one embodiment, reinforced soil is assessed using a non-contact method including positioning a reference electrode in close proximity to a surface of the soil without contacting the electrode to the soil surface, vibrating the electrode with a vibration generator, and measuring an electrical potential difference between the electrode and the soil surface, the potential difference being indicative of the condition of a portion of a reinforcement member positioned below the soil surface at the location of the electrode.

Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.