Abstract: Methods and systems for establishing a non-line of sight millimeter wave connection that include a transmitter unit having beam-steering capability, a receiver unit having beam-steering capability, and a reflecting unit in a position having a line-of-sight path to the transmitter unit and the receiver unit. The reflecting unit includes an attachment mechanism configured to attach to a mounting point on an object or surface, a reflecting surface that is reflective to millimeter-wave radiation, and an adjustable pivot connected between the attachment mechanism and the reflecting surface configured to permit directional positioning of the reflecting surface relative to the attachment mechanism.

Abstract: An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.

Abstract: An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.

Abstract: A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.

Abstract: An apparatus, imager elements, and a method for detecting a radio frequency image using phased array techniques. An example apparatus includes an array of radio frequency antennas fabricated on one or more packaged integrated circuits. The apparatus also includes a controller configured to selectively phase shift radio frequency signals from the antennas such that the at least a portion of the radio frequency image is focused.

Abstract: A sub-harmonic mixer includes a first transistor having a source and a drain and a second transistor having a source connected to the source of the first transistor and a drain connected to the drain of the first transistor. A mixing transistor is configured to be biased in a linear operating region. The mixing transistor includes a drain coupled to the sources of the first transistor and the second transistor. The mixing transistor has its drain driven by a signal at twice a local oscillator (LO) frequency and its gate driven by a radio frequency (RF) signal while the mixing transistor is biased in the linear region such that a process of frequency doubling and mixing are performed simultaneously.

Abstract: A phase shifter and method include a hybrid coupler being ground shielded. The hybrid coupler with reflective terminations connected to the hybrid coupler is configured to phase shift an applied signal wherein the reflective terminations include a parallel LC circuit.

Abstract: A sub-harmonic mixer includes a first transistor having a source and a drain and a second transistor having a source connected to the source of the first transistor and a drain connected to the drain of the first transistor. A mixing transistor is configured to be biased in a linear operating region. The mixing transistor includes a drain coupled to the sources of the first transistor and the second transistor. The mixing transistor has its drain driven by a signal at twice a local oscillator (LO) frequency and its gate driven by a radio frequency (RF) signal while the mixing transistor is biased in the linear region such that a process of frequency doubling and mixing are performed simultaneously.

Abstract: A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.

Abstract: A phased-array transmitter and receiver that may be effectively implemented on a silicon substrate. The transmitter distributes to front-ends, and the receiver combines signals from front-ends, using a power distribution/combination tree that employs both passive and active elements. By monitoring the power inputs and outputs, a digital control is able to rapidly provide phase and gain correction information to the front-ends. Such a transmitter/receiver includes a plurality of radio frequency (RF) front-ends and a power splitting/combining network that includes active and passive components configured to distribute signals to/from the front-ends.

Abstract: A differential cross-coupled power combiner in one aspect comprises a plurality of inputs, an output, a plurality of differential transmission lines each coupled between a corresponding one of the inputs and the output, and at least one set of additional differential transmission lines arranged in series between any two of the inputs. First and second ones of the additional differential transmission lines in the set are coupled to one another using a cross-coupling arrangement. Other aspects of the invention provide a differential cross-coupled power divider, communication system receivers and transmitters incorporating respective power combiners and dividers, and integrated circuit implementations of power combiners and dividers.

Abstract: A phase shifter and method include a hybrid coupler being ground shielded. The hybrid coupler with reflective terminations connected to the hybrid coupler is configured to phase shift an applied signal wherein the reflective terminations include a parallel LC circuit.

Abstract: A quadrature modulation circuit includes a mixer circuit including an integrated sign modulation control circuit and a plurality of mixer ports. The mixer ports include a first input port, a second input port, an output port and a sign modulation control port. The modulation circuit generates a modulated signal by operation of the mixer circuit multiplying a modulating signal applied to the first input port with a carrier signal applied to the second input port to generate a mixed signal output from the output port, and by operation of the integrated sign modulation control circuit controlling polarity switching of a signal at one of the mixer ports in response to a sign modulation control signal input to the sign modulation control port.

Abstract: Quadrature modulation systems, circuits and methods are provided to support various modulation modes including ASK (amplitude shift key), FSK (frequency shift key) and PSK (phase shift key) modulation at high data rates (e.g., gigabit data rates). For example, a modulation circuit includes a mixer circuit including an integrated sign modulation control circuit and a plurality of mixer ports. The mixer ports include a first input port, a second input port, an output port and a sign modulation control port. The modulation circuit generates a modulated signal by operation of the mixer circuit multiplying a modulating signal applied to the first input port with a carrier signal applied to the second input port to generate a mixed signal output from the output port, and by operation of the integrated sign modulation control circuit controlling polarity switching of a signal at one of the mixer ports in response to a sign modulation control signal input to the sign modulation control port.

Abstract: An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.

Abstract: A sub-harmonic mixer includes a first transistor having a source and a drain and a second transistor having a source connected to the source of the first transistor and a drain connected to the drain of the first transistor. A mixing transistor is configured to be biased in a linear operating region. The mixing transistor includes a drain coupled to the sources of the first transistor and the second transistor. The mixing transistor has its drain driven by a signal at twice a local oscillator (LO) frequency and its gate driven by a radio frequency (RF) signal while the mixing transistor is biased in the linear region such that a process of frequency doubling and mixing are performed simultaneously.

Abstract: Circuits and methods are provided for implementing highly efficient switch-mode power amplifiers using BJTs (bipolar junction transistors) as active switching devices at millimeter-wave frequencies. More specifically, circuits and methods are provided for driving power amplifiers with BJT switching devices to achieve highly efficient switch-mode (e.g., Class E) operation at millimeter wave frequencies (e.g., 60 GHz).