Abstract: Aspects of the present disclosure relate to a pressure sensor header for use with a pressure-sensing device. The pressure sensor header can be used in high-temperature environments. A pressure sensor header of the present disclosure can include a header shell, a sealing header glass that is sealed to the header shell, one or more electrical connections electrically isolated from the header shell by the sealing header glass, and a plate for sealing to a pressure-sensing device to be incorporated onto the pressure sensor header. The plate may include one or more ribs that allow for sealing of the plate to the header shell. The pressure sensor header may include a ribbed insert for sealing to the header shell and plate.

Abstract: Certain implementations of the disclosed technology include systems and methods for providing header assemblies for use with pressure sensors in high-temperature environments. Certain example implementations include a header assembly. The header assembly can include a header portion having a first side and a second side, the header portion including one or more bores extending through the header portion from the first side to the second side. In certain example implementations, one or more platinum header pins are disposed within and extending through the one or more bores of the header portion. In certain example implementations, the header assembly can include one or more brazing portions corresponding to the one or more platinum header pins. In certain example implementations, the platinum header pins are configured for electrical communication with corresponding electrodes of a leadless transducer element.

Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.

Abstract: Systems and methods are disclosed for a pressure sensor device. The pressure sensor device includes a header that defines an interior cavity including one or more tether connecting regions. The header further defines an outer portion in communication with the interior cavity; the outer portion includes a plurality of through bores in communication with an exterior portion of the header for insertion of header pins through the header. The pressure sensor device includes a pressure sensor chip disposed within the interior cavity of the header. One or more anchoring tethers are attached to the corresponding one or more tether connecting regions. The pressure sensor chip is free to move within the interior cavity of the header, and the one or more anchoring tethers are in communication with the pressure sensor chip and are configured to limit movement of the pressure sensor chip within the header.

Abstract: A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

Abstract: A pressure transducer assembly that uses static pressure compensation to capture low-level dynamic pressures in high temperature environments. In one embodiment, a method comprises receiving, at a first tube, a pressure, wherein the pressure includes a static pressure component and a dynamic pressure component; receiving, at a micro-filter, the pressure; filtering, by the micro-filter, at least a portion of the dynamic pressure component of the pressure; outputting, from the micro-filter, a filtered pressure; receiving, at a first surface of a first sensing element, the pressure; receiving, at a second surface of the first sensing element, the filtered pressure; measuring, by the first sensing element, a difference between the pressure and the filtered pressure, wherein the difference is associated with the dynamic pressure component of the pressure; and outputting, from the first sensing element, a first pressure signal associated with the dynamic pressure component of the pressure.

Abstract: This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.

Abstract: A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

Abstract: This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.

Abstract: This disclosure provides example methods, devices, and systems for an ultra-miniature, multi-hole flow angle probe. The construction, packaging of a multitude of absolute and or differential pressure transducers or sensors are invented for the purpose of providing highly accurate measurement of flow properties, flow angle in particular. The unique placement of sensors leads to further miniaturization relative to current state of the art. Further the use of closely coupled, differential transducer or transducers achieves higher accuracy measurement of small pressure variations coupled with large mean or average baseline pressures, as is demanded in modern aerodynamic or turbo-machinery devices. The use and installation of ultra-miniature sensors insider the device invented herein achieves higher frequency response than allowable via previous state of the part.

Abstract: Aspects of the present disclosure relate to a pressure sensor header for use with a pressure-sensing device. The pressure sensor header can be used in high-temperature environments. A pressure sensor header of the present disclosure can include a header shell, a sealing header glass that is sealed to the header shell, one or more electrical connections electrically isolated from the header shell by the sealing header glass, and a plate for sealing to a pressure-sensing device to be incorporated onto the pressure sensor header. The plate may include one or more ribs that allow for sealing of the plate to the header shell. The pressure sensor header may include a ribbed insert for sealing to the header shell and plate.

Abstract: Certain implementations of the disclosed technology include systems and methods for providing header assemblies for use with pressure sensors in high-temperature environments. Certain example implementations include a header assembly. The header assembly can include a header portion having a first side and a second side, the header portion including one or more bores extending through the header portion from the first side to the second side. In certain example implementations, one or more platinum header pins are disposed within and extending through the one or more bores of the header portion. In certain example implementations, the header assembly can include one or more brazing portions corresponding to the one or more platinum header pins. In certain example implementations, the platinum header pins are configured for electrical communication with corresponding electrodes of a leadless transducer element.

Abstract: This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.

Abstract: This disclosure provides example methods, devices, and systems for a sensor co-located with an electronic circuit. In one embodiment, a sensor assembly may comprise a semiconductor device configured to include a sensor having a sensing element, an electronic circuit and wherein the sensing element and the electronic circuit are hermetically sealed in the same sensor assembly; and wherein the sensor assembly is capable of outputting an environmental condition signal associated with an environmental condition measured by the sensor.

Abstract: This disclosure provides example methods, devices, and systems for a sensor co-located with an electronic circuit. In one embodiment, a sensor assembly may comprise a semiconductor device configured to include a sensor having a sensing element, an electronic circuit and wherein the sensing element and the electronic circuit are hermetically sealed in the same sensor assembly; and wherein the sensor assembly is capable of outputting an environmental condition signal associated with an environmental condition measured by the sensor.

Abstract: This disclosure provides example methods, devices, and systems for an ultra-miniature, multi-hole flow angle probe. The construction, packaging of a multitude of absolute and or differential pressure transducers or sensors are invented for the purpose of providing highly accurate measurement of flow properties, flow angle in particular. The unique placement of sensors leads to further miniaturization relative to current state of the art. Further the use of closely coupled, differential transducer or transducers achieves higher accuracy measurement of small pressure variations coupled with large mean or average baseline pressures, as is demanded in modern aerodynamic or turbo-machinery devices. The use and installation of ultra-miniature sensors insider the device invented herein achieves higher frequency response than allowable via previous state of the part.

Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.

Abstract: A pressure transducer assembly that uses static pressure compensation to capture low-level dynamic pressures in high temperature environments. In one embodiment, a method comprises receiving, at a first tube, a pressure, wherein the pressure includes a static pressure component and a dynamic pressure component; receiving, at a micro-filter, the pressure; filtering, by the micro-filter, at least a portion of the dynamic pressure component of the pressure; outputting, from the micro-filter, a filtered pressure; receiving, at a first surface of a first sensing element, the pressure; receiving, at a second surface of the first sensing element, the filtered pressure; measuring, by the first sensing element, a difference between the pressure and the filtered pressure, wherein the difference is associated with the dynamic pressure component of the pressure; and outputting, from the first sensing element, a first pressure signal associated with the dynamic pressure component of the pressure.

Abstract: A method, device and system are provided for measuring multiple pressures under severe conditions. In one embodiment, a method comprises receiving, by a processor, from a first sensor, a first pressure signal; receiving, by the processor, from a second sensor, a second pressure signal; receiving, by the processor, from a first memory, a first correction coefficient for the first sensor; receiving, by the processor, from a second memory, a second correction coefficient for the second sensor; modifying, by the processor, the first pressure signal using the first correction coefficient to generate a first corrected pressure signal; modifying, by the processor, the second pressure signal using the second correction coefficient to generate a second corrected pressure signal; and outputting, by the processor, the first corrected pressure signal and the second corrected pressure signal.

Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.