Patents by Inventor Alexander Dobrinsky

Alexander Dobrinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patterned Layer Design for Group III Nitride Layer Growth
    Publication number: 20180269355
    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.
    Type: Application
    Filed: May 25, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Storage Device Including Ultraviolet Illumination
    Publication number: 20180264150
    Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska, Igor Agafonov
  • Ultraviolet Absorbent Enclosure
    Publication number: 20180264154
    Abstract: A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolent radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.
    Type: Application
    Filed: May 22, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Storage Device Including Target UV Illumination Ranges
    Publication number: 20180264151
    Abstract: Ultraviolet radiation is directed within an area at target wavelengths, target intensities, a target temporal distribution, and/or a target spatial distribution. The target attribute(s) of the ultraviolet radiation can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, an ethylene decomposition operating configuration, and/or the like.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Optoelectronic device with modulation doping
    Patent number: 10069034
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: September 4, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Light Emitting Heterostructure with Partially Relaxed Semiconductor Layer
    Publication number: 20180248072
    Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
    Type: Application
    Filed: April 25, 2018
    Publication date: August 30, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Optoelectronic Device with Modulation Doping
    Publication number: 20180248071
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Application
    Filed: April 30, 2018
    Publication date: August 30, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
  • Storage Device Including Ultraviolet Illumination
    Publication number: 20180243458
    Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
    Type: Application
    Filed: April 25, 2018
    Publication date: August 30, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Timothy James Bettles, Alexander Dobrinsky, Remigijus Gaska, Michael Shur, Robert M. Kennedy, Arthur Peter Barber, III, Carlton Gibson
  • Substrate structure removal
    Patent number: 10050172
    Abstract: Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: August 14, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov
  • Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
    Patent number: 10050174
    Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: August 14, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
  • Patterned layer design for group III nitride layer growth
    Patent number: 10050175
    Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: August 14, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer
    Publication number: 20180226538
    Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
    Type: Application
    Filed: March 30, 2018
    Publication date: August 9, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky
  • Multi Wave Sterilization System
    Publication number: 20180221521
    Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.
    Type: Application
    Filed: March 30, 2018
    Publication date: August 9, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky
  • Ultraviolet water disinfection system
    Patent number: 10040699
    Abstract: A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: August 7, 2018
    Assignee: SENSOR ELECTRONICS TECHNOLOGY, INC.
    Inventors: Saulius Smetona, Timothy James Bettles, Igor Agafonov, Ignas Gaska, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Optoelectronic Device Mounting Structure with Embedded Heatsink Element
    Publication number: 20180219137
    Abstract: A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink.
    Type: Application
    Filed: March 20, 2018
    Publication date: August 2, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Grigory Simin, Alexander Dobrinsky
  • Fluid-based light guiding structure and fabrication thereof
    Patent number: 10025028
    Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: July 17, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Heterostructure with stress controlling layer
    Patent number: 10026872
    Abstract: A solution for fabricating a device is described. The solution can include fabricating a heterostructure for the device, which includes at least one stress controlling layer. The stress controlling layer can include one or more attributes varies as a function of a lateral position based on a target variation of stresses in a semiconductor layer located directly under the stress controlling layer. Embodiments are further directed to a heterostructure including at least one stress controlling layer and a device including the heterostructure.
    Type: Grant
    Filed: June 5, 2016
    Date of Patent: July 17, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky
  • Ultraviolet Transparent Structure for Ultraviolet Illumination
    Publication number: 20180193503
    Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.
    Type: Application
    Filed: March 5, 2018
    Publication date: July 12, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Alexander Dobrinsky, Michael Shur
  • Ultraviolet Illuminator for Object Disinfection
    Publication number: 20180185529
    Abstract: Aspects of the invention provide a disinfecting pad for disinfecting and sterilizing objects. A plurality of pixelated light emitting sources are located on the flexible pad in an array, wherein a pixel characteristic radius is approximately 1/10 millimeter to approximately 1 centimeter and the plurality of pixelated light emitting sources covers at least 25% of the flexible pad. Each of the plurality of pixelated light emitting sources includes at least one ultraviolet radiation source. The system includes set of sensors for acquiring data for the at least one object, wherein the data includes a presence and a location of the at least one object. A control system for selectively operating the at least one ultraviolet radiation source of the plurality of pixelated light emitting sources based on the presence and the location of the at least one object.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 5, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky
  • Device with Stress Controlling Structure and Method of Testing
    Publication number: 20180188315
    Abstract: An optoelectronic device with at least one stress controlling structure and method of testing the device is disclosed. The optoelectronic device includes a stress controlling structure formed adjacent to a semiconductor heterostructure. The optoelectronic device can further include a stress inducing component that is configured to induce a change in stress within the stress controlling structure. The stress inducing component can induce a number of different stresses during a test of the optoelectronic device. A strain evaluator can evaluate the stresses within the semiconductor heterostructure as a function of a strain generated in the stress controlling structure.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 5, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur