Patents by Inventor Alexander Dobrinsky
Alexander Dobrinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160315449Abstract: A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.Type: ApplicationFiled: April 27, 2016Publication date: October 27, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Michael Shur, Alexander Dobrinsky
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Publication number: 20160260867Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).Type: ApplicationFiled: March 14, 2016Publication date: September 8, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Remigijus Gaska, Jinwei Yang, Michael Shur, Alexander Dobrinsky
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Patent number: 9437774Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.Type: GrantFiled: November 9, 2015Date of Patent: September 6, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Remigijus Gaska, Maxim S. Shatalov, Michael Shur, Alexander Dobrinsky
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Patent number: 9425353Abstract: A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can be located between a semiconductor layer and another layer of material. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor layer. The layer of material can penetrate at least some of the plurality of pores and directly contact the semiconductor layer. In an illustrative embodiment, the layer of material is a conductive material and the anodic aluminum oxide is located at a p-type contact.Type: GrantFiled: October 2, 2014Date of Patent: August 23, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska
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Patent number: 9415126Abstract: A chamber configured to increase an intensity of target radiation emitted therein is provided. The chamber includes an enclosure at least partially formed by a set of transparent walls. Each transparent wall can comprise a first material transparent to the target radiation and having a refractive index greater than 1.1 for the target radiation. The outer surface of the set of transparent walls can include a set of cavities, each cavity comprising an approximately prismatic void. Additionally, a medium located adjacent to an outer surface of the set of transparent walls can have a refractive index within approximately one percent of a refractive index of a vacuum for the target radiation.Type: GrantFiled: May 23, 2014Date of Patent: August 16, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9412901Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.Type: GrantFiled: March 31, 2015Date of Patent: August 9, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky
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Patent number: 9412902Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.Type: GrantFiled: February 22, 2015Date of Patent: August 9, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20160225941Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.Type: ApplicationFiled: April 12, 2016Publication date: August 4, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9404182Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.Type: GrantFiled: July 21, 2015Date of Patent: August 2, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Igor Agafonov, Michael Shur, Alexander Dobrinsky
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Patent number: 9406840Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.Type: GrantFiled: December 30, 2015Date of Patent: August 2, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
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Patent number: 9397260Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.Type: GrantFiled: October 9, 2012Date of Patent: July 19, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20160197228Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.Type: ApplicationFiled: March 14, 2016Publication date: July 7, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska
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Publication number: 20160197233Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).Type: ApplicationFiled: March 14, 2016Publication date: July 7, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky
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Patent number: 9385271Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.Type: GrantFiled: May 26, 2015Date of Patent: July 5, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
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Publication number: 20160190387Abstract: A solution for fabricating a group III nitride heterostructure and/or a corresponding device is provided. The heterostructure can include a nucleation layer, which can be grown on a lattice mismatched substrate using a set of nucleation layer growth parameters. An aluminum nitride layer can be grown on the nucleation layer using a set of aluminum nitride layer growth parameters. The respective growth parameters can be configured to result in a target type and level of strain in the aluminum nitride layer that is conducive for growth of additional heterostructure layers resulting in strains and strain energies not exceeding threshold values which can cause relaxation and/or dislocation formation.Type: ApplicationFiled: December 30, 2015Publication date: June 30, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Wenhong Sun, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur, Remigijus Gaska
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Publication number: 20160169636Abstract: An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.Type: ApplicationFiled: February 22, 2016Publication date: June 16, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Remigijus Gaska, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
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Publication number: 20160172544Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.Type: ApplicationFiled: February 12, 2016Publication date: June 16, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Michael Shur, Grigory Simin
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Publication number: 20160151523Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.Type: ApplicationFiled: February 4, 2016Publication date: June 2, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Yuri Bilenko, Alexander Dobrinsky, Michael Shur
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Publication number: 20160155902Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.Type: ApplicationFiled: November 6, 2015Publication date: June 2, 2016Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.Inventors: Alexander Lunev, Alexander Dobrinsky, Maxim S. Shatalov, Remigijus Gaska, Michael Shur
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Publication number: 20160149099Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.Type: ApplicationFiled: December 30, 2015Publication date: May 26, 2016Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Jianyu Deng, Alexander Dobrinsky, Xuhong Hu, Remigijus Gaska, Michael Shur
