Abstract: A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The write element writes a data level from the write bit line input to the gain cell when triggered by the write trigger input. The retention element buffers between an internal buffer node and an internal storage node during data retention. The retention element also connects or disconnects the buffer node to a first constant voltage according to the data level being retained in the gain cell. The read element decouples the storage node from the read bit line output during data read. The read element also connects and disconnects the read bit line output to a second constant voltage according to the data level being read from the gain cell.

Abstract: A method of designing a logic circuit with data-dependent delays is performed using an electronic design automation system. The logic circuit includes logic paths from logic inputs to at least one logic output. The method includes: obtaining an initial circuit design; specifying respective delays for multiple logic paths in the initial circuit design such that at least some of the outputs switch at different times within a clock cycle for different combinations of logic input levels; and forming a second circuit design having the specified respective delays along the respective logic paths by adding delay elements to the initial circuit design based on the specified respective delays.

Abstract: A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The write element writes a data level from the write bit line input to the gain cell when triggered by the write trigger input. The retention element buffers between an internal buffer node and an internal storage node during data retention. The retention element also connects or disconnects the buffer node to a first constant voltage according to the data level being retained in the gain cell. The read element decouples the storage node from the read bit line output during data read. The read element also connects and disconnects the read bit line output to a second constant voltage according to the data level being read from the gain cell.

Abstract: A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The gain cell also includes a write transistor, retention element and read transistor. Each of the transistors includes a respective first diffusion connection, gate connection and second diffusion connection. The write transistor first diffusion connection is connected to the write bit line input and the write transistor gate connection is connected to the write trigger input. The read transistor first diffusion connection being connected to the read bit line output and the second diffusion connection is connected to the read trigger input. The retention element buffers between write transistor and the read transistor during data retention. The retention element also connects or disconnects a write transistor diffusion connection to/from a constant voltage in accordance with a retained data level at the read transistor gate connection.

Abstract: An RMTL gate includes at least two logic blocks, where at least one of the logic blocks operates in multiple modes. The respective logic block mode(s) are selected by a topology selector which applies mode control signals to the logic blocks in order to obtain a selected topology for logic circuit operation. RMTL logic gates may be cascaded and/or interconnected to form an RMTL logic circuit with multiple logic gates which may operate with dynamically varying topologies. Use of random, semi-random or specified control sequences may protect the logic circuit against security attacks.

Abstract: A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The gain cell also includes a write transistor, retention element and read transistor. Each of the transistors includes a respective first diffusion connection, gate connection and second diffusion connection. The write transistor first diffusion connection is connected to the write bit line input and the write transistor gate connection is connected to the write trigger input. The read transistor first diffusion connection being connected to the read bit line output and the second diffusion connection is connected to the read trigger input. The retention element buffers between write transistor and the read transistor during data retention. The retention element also connects or disconnects a write transistor diffusion connection to/from a constant voltage in accordance with a retained data level at the read transistor gate connection.

Abstract: A method for designing a dual-mode logic circuit which is selectably operational in static and dynamic modes is performed as follows. A basis library with a DML inverter and dual-mode logic (DML) bicells is provided. Each DML bicell includes a type-A DML logic gate with a clock input and a type-B DML logic gate with an inverted clock input. A pseudo-static library is formed from the basis library by modifying each bicell of the basis library and specifying at least one dynamic timing parameter. A dynamic library is formed from the basis library by specifying dynamic timing parameters for the basis library DML inverter and bicells. Logic behavior of the required logic circuit is defined. An initial logic circuit design synthesized from the pseudo-static library and the defined logic behavior. Finally, a dynamic circuit design is formed by replacing modified bicells with corresponding bicells from the dynamic library.

Abstract: A method for designing a dual-mode logic circuit which is selectably operational in static and dynamic modes is performed as follows. A basis library with a DML inverter and dual-mode logic (DML) bicells is provided. Each DML bicell includes a type-A DML logic gate with a clock input and a type-B DML logic gate with an inverted clock input. A pseudo-static library is formed from the basis library by modifying each bicell of the basis library and specifying at least one dynamic timing parameter. A dynamic library is formed from the basis library by specifying dynamic timing parameters for the basis library DML inverter and bicells. Logic behavior of the required logic circuit is defined. An initial logic circuit design synthesized from the pseudo-static library and the defined logic behavior. Finally, a dynamic circuit design is formed by replacing modified bicells with corresponding bicells from the dynamic library.

Abstract: An integrated circuit with electronic and photonic elements includes: at least one electronic processing layer; at least one interconnect layer adjacent to said electronic processing layer, and at least one photonic element located within a respective interconnect layer. The photonic elements implement respective operations upon optical signals. At least a portion of each interconnect layer which includes photonic elements is optically-conductive, and therefore suitable for the inclusion of the photonic elements. In some embodiments said photonic elements comprising optical waveguides are configures as optical logic gates to perform logic operations.

Abstract: A dual-mode logic gate, for selectable operation in either of static and dynamic modes, includes: a static gate which includes at least one logic input and a logic output; a mode selector, configured for outputting a turn-off signal to select static mode operation and for outputting a dynamic clock signal to select dynamic mode operation; and a switching element associated with the mode selector static gate, comprising a first input connected to a constant voltage, a second input for inputting the mode selection signal from the mode selector, and an output connected to a logic output of the static gate. The switching elements switches the logic gate operation from static to dynamic mode, by applying the appropriate signal to the switching element.

Abstract: A dual-mode logic gate, for selectable operation in either of static and dynamic modes, includes: a static gate which includes at least one logic input and a logic output; a mode selector, configured for outputting a turn-off signal to select static mode operation and for outputting a dynamic clock signal to select dynamic mode operation; and a switching element associated with the mode selector static gate, comprising a first input connected to a constant voltage, a second input for inputting the mode selection signal from the mode selector, and an output connected to a logic output of the static gate. The switching elements switches the logic gate operation from static to dynamic mode, by applying the appropriate signal to the switching element.

Abstract: A memory cell with an internal supply feedback loop is provided herein. The memory cell includes a latch having two storage nodes Q and QB, and a supply node. A gating device couples the supply node of the latch to the supply voltage. The gating device is controlled by a feedback loop coming from storage node QB. Due to the aforementioned asymmetric topology, the writing of logic “1” and the writing of logic “0” are carried out differently. Contrary to standard SRAM cells, in the hold states, only the QB storage node presents a valid value of stored data. The feedback loop cuts off the supply voltage for the latch such that the latch is no longer an inverting latch. By cutting off the supply voltage at the stable hold states, while maintaining readability of the memory cell, leakage currents associated with the hold states are eliminated altogether.

Abstract: An SRAM memory cell with an internal supply feedback loop is provided herein. The memory cell includes a latch that has a storage node Q, a storage node QB, a supply node, and a ground node. The supply node is coupled via a gating device to a supply voltage and ground node is connected to ground. In addition, storage node Q is fed back via feedback loop into a control node of the gating device. In operation, writing into the memory cell may be carried out in a similar manner to dual port SRAM cells, utilizing one or two write circuitries and for writing into storage node Q and storage node QB respectively. Differently from standard SRAM cells, the feedback loop, by controlling the gating device is configured to weaken the write contention.

Abstract: A memory cell with an internal supply feedback loop is provided herein. The memory cell includes a latch having two storage nodes Q and QB, and a supply node. A gating device couples the supply node of the latch to the supply voltage. The gating device is controlled by a feedback loop coming from storage node QB. Due to the aforementioned asymmetric topology, the writing of logic “1” and the writing of logic “0” are carried out differently. Contrary to standard SRAM cells, in the hold states, only the QB storage node presents a valid value of stored data. The feedback loop cuts off the supply voltage for the latch such that the latch is no longer an inverting latch. By cutting off the supply voltage at the stable hold states, while maintaining readability of the memory cell, leakage currents associated with the hold states are eliminated altogether.

Abstract: An SRAM memory cell with an internal supply feedback loop is provided herein. The memory cell includes a latch that has a storage node Q, a storage node QB, a supply node, and a ground node. The supply node is coupled via a gating device to a supply voltage and ground node is connected to ground. In addition, storage node Q is fed back via feedback loop into a control node of the gating device. In operation, writing into the memory cell may be carried out in a similar manner to dual port SRAM cells, utilizing one or two write circuitries and for writing into storage node Q and storage node QB respectively. Differently from standard SRAM cells, the feedback loop, by controlling the gating device is configured to weaken the write contention.

Abstract: The subject matter of this specification can be implemented in, among other things, an imaging system including an active pixel sensor imaging array configured to capture an image, said imaging array being in electronic communication with a watermark embedder.

Abstract: A complementary logic circuit contains first and second logic inputs, first and second dedicated logic terminals, a high-voltage terminal configured for connection to a high constant voltage, a low-voltage terminal configured for connection to a low constant voltage, a p-type transistor and an n-type transistor. The p-type transistor and n-type transistor each have a respective outer diffusion connection, gate connection, inner diffusion connection, and bulk connection. The first and second dedicated logic terminals are connected respectively to the outer diffusion connection of the p-type transistor and the outer diffusion connection of the n-type transistor. The inner diffusion connection of the p-type transistor and the inner diffusion connection of the n-type transistor are connected together to form a common diffusion logic terminal.

Abstract: A complementary logic circuit contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a high-voltage terminal configured for connection to a high constant voltage a low-voltage terminal configured for connection to a low constant voltage, a p-type transistor, and an n-type transistor. The p-type transistor has an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection. The n-type transistor has an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection.

Abstract: A complementary logic circuit, comprising: a first and second logic input; a first and second dedicated logic terminal; a p-type transistor network comprising multiple p-type transistors, for implementing a predetermined logic function, and having an outer diffusion connection connected to the first dedicated logic terminal, a first network gate connection connected to the first logic input, and an inner diffusion connection; and an n-type transistor network comprising multiple n-type transistors, for implementing a logic function complementary to the predetermined logic function, and having an outer diffusion connection connected to the second dedicated logic terminal, a first network gate connection connected to the second logic input, and an inner diffusion connection; the inner diffusion connections of the p-type transistor network and of the n-type transistor network being connected to form a common diffusion logic terminal.

Abstract: A complementary logic circuit contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a first logic block, and a second logic block. The first logic block consists of a network of p-type transistors for implementing a predetermined logic function. The p-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection. The outer diffusion connection of the p-type transistor network is connected to the first dedicated logic terminal, and the first network gate connection of the p-type transistor network is connected to the first logic input. The second logic block consists of a network of n-type transistors which implements a logic function complementary to the logic function implemented by the first logic block. The n-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection.