Abstract: A substrate includes a dielectric insulation layer, a first metallization layer arranged on a first surface of the dielectric insulation layer, and a second metallization layer arranged on a second, opposite surface of the dielectric insulation layer. The dielectric insulation layer includes an outer edge extending between the first and second surfaces. The outer edge includes first sections and second sections. Along each first section, a difference between a first distance and a second distance has a first value. Along each second section, the difference between the first and second distances has a second value that is different from the first value. The first distance is a distance between the outer edge of the dielectric insulation layer and an outer edge of the first metallization layer. The second distance is a distance between the outer edge of the dielectric insulation layer and an outer edge of the second metallization layer.

Abstract: A power semiconductor module arrangement includes: a housing; first and second electrical contacts within the housing; and a mounting arrangement including a frame or body and first and second terminal elements. The mounting arrangement is inserted in and coupled to the housing. First ends of the first and second terminal elements mechanically and electrically contact the first and second electrical contacts, respectively. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.

Abstract: A power semiconductor module arrangement includes: a housing; first and second electrical contacts within the housing; and a mounting arrangement including a frame or body and first and second terminal elements. The mounting arrangement is inserted in and coupled to the housing. First ends of the first and second terminal elements mechanically and electrically contact the first and second electrical contacts, respectively. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.

Abstract: A power semiconductor module arrangement includes a semiconductor substrate arranged in a housing, at least one semiconductor body being arranged on the semiconductor substrate, and a mounting arrangement including a frame or body, a first terminal element, and a second terminal element. The mounting arrangement is inserted in and coupled to the housing. Each terminal element mechanically and electrically contacts the semiconductor substrate with a first end. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.

Abstract: A power semiconductor module arrangement includes a semiconductor substrate arranged in a housing, and a mounting arrangement including a frame or body, and at least one terminal element coupled to the frame or body. The mounting arrangement is inserted in and coupled to the housing. The mounting arrangement has a lower surface which, when the mounting arrangement is inserted in and coupled to the housing, rests on at least one contact surface of the housing. When the mounting arrangement is inserted in and coupled to the housing, the at least one terminal element mechanically and electrically contacts the semiconductor substrate with a first end, and a distance between an upper surface of the semiconductor substrate and the at least one contact surface in a vertical direction equals a length of the first end between the upper surface of the semiconductor substrate and the lower surface of the mounting arrangement.

Abstract: A power semiconductor module arrangement includes a first switching element and a second switching element, each having a control terminal and a controllable load path between two load terminals, the load paths being operatively coupled in series and between a first supply node, and a second supply node. The switching elements are connected with each other via a first common node. An output node configured to be coupled to an output potential is coupled to the first common node. The first supply node is formed by a plurality of first terminals, the second supply node is formed by a plurality of second terminals, and the output node is formed by a plurality of third terminals. The switching elements are arranged inside a housing.

Abstract: A charging device may include a turbine housing and a wastegate valve device. The wastegate valve device may include a flap, a spindle arm, a wastegate spindle, an axial stop, and a lever arm non-rotatably attached to the wastegate spindle. The wastegate spindle may be rotatably mounted in a bushing disposed on the turbine housing. A wastegate duct may be disposed in the turbine housing. The wastegate duct may have a duct aperture enclosed by a valve seat. The duct aperture, when in a closed state, may be closed by the flap of the wastegate valve device. A sealing face of the flap may be defined by a sequence of at least two conical peripheral surfaces arranged next to one another and each having a different inclination.

Abstract: A power semiconductor module arrangement includes a semiconductor substrate arranged in a housing, and a mounting arrangement including a frame or body, and at least one terminal element coupled to the frame or body. The mounting arrangement is inserted in and coupled to the housing. The mounting arrangement has a lower surface which, when the mounting arrangement is inserted in and coupled to the housing, rests on at least one contact surface of the housing. When the mounting arrangement is inserted in and coupled to the housing, the at least one terminal element mechanically and electrically contacts the semiconductor substrate with a first end, and a distance between an upper surface of the semiconductor substrate and the at least one contact surface in a vertical direction equals a length of the first end between the upper surface of the semiconductor substrate and the lower surface of the mounting arrangement.

Abstract: A power semiconductor module arrangement includes a first switching element and a second switching element, each having a control terminal and a controllable load path between two load terminals, the load paths being operatively coupled in series and between a first supply node, and a second supply node. The switching elements are connected with each other via a first common node. An output node configured to be coupled to an output potential is coupled to the first common node. The first supply node is formed by a plurality of first terminals, the second supply node is formed by a plurality of second terminals, and the output node is formed by a plurality of third terminals. The switching elements are arranged inside a housing.

Abstract: A power semiconductor module arrangement includes a semiconductor substrate arranged in a housing, at least one semiconductor body being arranged on the semiconductor substrate, and a mounting arrangement including a frame or body, a first terminal element, and a second terminal element. The mounting arrangement is inserted in and coupled to the housing. Each terminal element mechanically and electrically contacts the semiconductor substrate with a first end. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.

Abstract: A charging device may include a turbine housing and a wastegate valve device. The wastegate valve device may include a flap, a spindle arm, a wastegate spindle, an axial stop, and a lever arm non-rotatably attached to the wastegate spindle. The wastegate spindle may be rotatably mounted in a bushing disposed on the turbine housing. A wastegate duct may be disposed in the turbine housing. The wastegate duct may have a duct aperture enclosed by a valve seat. The duct aperture, when in a closed state, may be closed by the flap of the wastegate valve device. A sealing face of the flap may be defined by a sequence of at least two conical peripheral surfaces arranged next to one another and each having a different inclination.

Abstract: A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.

Abstract: A power semiconductor module is produced by: providing an electrically conductive terminal block having a screw thread, a connecting conductor having first and second sections, a module housing, a circuit carrier having a dielectric insulation carrier and an upper metallization layer on an upper side of the insulation carrier, and a semiconductor component; fitting the semiconductor component on the circuit carrier; producing a firm and electrically conductive connection between the terminal block and the connecting conductor at the first section; producing a material-fit and electrically conductive connection between the circuit carrier or the semiconductor component and the connecting conductor at the second section; and arranging the terminal block and the circuit carrier fitted with the semiconductor component on the module housing so the semiconductor component is arranged in the module housing and the screw thread is accessible from an outer side of the module housing.

Abstract: An electrical connection module system includes a first connection plate with a first connection end and at least one first foot section, a first screw nut, and a dielectric holder. The dielectric holder has a first reception region for receiving the first screw nut. The first connection plate can, when the first screw nut is placed in the first reception region, be pushed onto the dielectric holder and be brought into a first target position such that the first screw nut is arranged between the dielectric holder and the first connection end and is held by the first connection end in the first reception region in such a way that the first screw nut cannot fall out.

Abstract: A power semiconductor module is produced by: providing an electrically conductive terminal block having a screw thread, a connecting conductor having first and second sections, a module housing, a circuit carrier having a dielectric insulation carrier and an upper metallization layer on an upper side of the insulation carrier, and a semiconductor component; fitting the semiconductor component on the circuit carrier; producing a firm and electrically conductive connection between the terminal block and the connecting conductor at the first section; producing a material-fit and electrically conductive connection between the circuit carrier or the semiconductor component and the connecting conductor at the second section; and arranging the terminal block and the circuit carrier fitted with the semiconductor component on the module housing so the semiconductor component is arranged in the module housing and the screw thread is accessible from an outer side of the module housing.

Abstract: An electrical connection module system includes a first connection plate with a first connection end and at least one first foot section, a first screw nut, and a dielectric holder. The dielectric holder has a first reception region for receiving the first screw nut. The first connection plate can, when the first screw nut is placed in the first reception region, be pushed onto the dielectric holder and be brought into a first target position such that the first screw nut is arranged between the dielectric holder and the first connection end and is held by the first connection end in the first reception region in such a way that the first screw nut cannot fall out.

Abstract: A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.

Abstract: In a method and a device for adjusting a frameless window pane of a motor vehicle by means of a motorized window lifter activated by a control device, for adjusting the window pane between an open position and a closed position, in which the window pane upper edge is arranged in a window pane seal associated therewith and connected to the motor vehicle roof, the closed position of the window pane and/or the closing force with which the window pane bears against the window pane seal, is altered depending on the relative position of the window pane seal to the window pane upper edge. As a result, a connection of the window pane upper edge to the window pane seal which remains the same irrespective of the driving speed of the motor vehicle, is guaranteed and ensures that even at higher driving speeds there is no occurrence of leakages or increased wind noise.