Abstract: A bone material removal device including a cannula, a bone drilling forward tip and a bore widening element including a bone carving portion that slides axially relative to the cannula and extends in a circumferential direction and wherein the axial movement of the bore widening element relative to the cannula brings a carving portions to travel and extend radially in a circumferential direction beyond a surface of the cannula and carve bone from a wall of a bore.

Abstract: A method for screening memory cells includes erasing the memory cells, weakly programming the memory cells to a modified erased state, performing a first read operation on the memory cells after the erasing and the weakly programming, screening any of the memory cells that exhibit a read current during the first read operation below a margin read current threshold M1, baking the memory cells after the first read operation, performing a second read operation on the memory cells after the baking, and screening any of the memory cells that exhibit a read current during the second read operation below the margin read current threshold M1.

Abstract: A bone material removal device including a cannula, a bone drilling forward tip and a bore widening element including a bone carving portion that slides axially relative to the cannula and extends in a circumferential direction and wherein the axial movement of the bore widening element relative to the cannula brings a carving portions to travel and extend radially in a circumferential direction beyond a surface of the cannula and carve bone from a wall of a bore.

Abstract: A method of programing a memory device having a plurality of memory cell groups where each of the memory cell group includes N non-volatile memory cells, where N is an integer greater than or equal to 2. For each memory cell group, the method includes programming each of the non-volatile memory cells in the memory cell group to a particular program state, performing multiple read operations on each of the non-volatile memory cells in the memory cell group, identifying one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply programming all of the non-volatile memory cells in the memory cell group except the identified non-volatile memory cell, and programming the identified non-volatile memory cell in the memory cell group with user data.

Abstract: A bone material removal device, including a tubular element comprising a proximal end and a distal end, a shaft received within the tubular element and comprising a proximal end and a distal end, a cutting tooth movably coupled to the distal end of the shaft and a shaft displacement actuator at the proximal end of the tubular element rotatably coupled to the shaft, wherein at least partial rotation of the actuator in a first direction brings the cutting tooth to travel from a closed retracted position to an open extended position.

Abstract: A memory device and method for a non-volatile memory cell having a gate that includes programming the memory cell to an initial program state corresponding to a target read current and a threshold voltage, including applying a program voltage having a first value to the gate, storing the first value in a memory, reading the memory cell in a first read operation using a read voltage applied to the gate that is less than the target threshold voltage to generate a first read current, and subjecting the memory cell to additional programming in response to determining that the first read current is greater than the target read current. The additional programming includes retrieving the first value from the memory, determining a second value greater than the first value, and programming the selected non-volatile memory cell that includes applying a program voltage having the second value to the gate.

Abstract: A method of programing a memory device having a plurality of memory cell groups where each of the memory cell group includes N non-volatile memory cells, where N is an integer greater than or equal to 2. For each memory cell group, the method includes programming each of the non-volatile memory cells in the memory cell group to a particular program state, performing multiple read operations on each of the non-volatile memory cells in the memory cell group, identifying one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply programming all of the non-volatile memory cells in the memory cell group except the identified non-volatile memory cell, and programming the identified non-volatile memory cell in the memory cell group with user data.

Abstract: A bone material removal device, including a tubular element comprising a proximal end and a distal end, a shaft received within the tubular element and comprising a proximal end and a distal end, a cutting tooth movably coupled to the distal end of the shaft and a shaft displacement actuator at the proximal end of the tubular element rotatably coupled to the shaft, wherein at least partial rotation of the actuator in a first direction brings the cutting tooth to travel from a closed retracted position to an open extended position.

Abstract: A method and device for programming a non-volatile memory cell, where the non-volatile memory cell includes a first gate. The non-volatile memory cell is programmed to an initial program state that corresponds to meeting or exceeding a target threshold voltage for the first gate of the non-volatile memory cell. The target threshold voltage corresponds to a target read current. The non-volatile memory cell is read in a first read operation using a read voltage applied to the first gate of the non-volatile memory cell that is less than the target threshold voltage to generate a first read current. The non-volatile memory cell is subjected to additional programming in response to determining that the first read current is greater than the target read current.

Abstract: A method and device for programming a non-volatile memory cell, where the non-volatile memory cell includes a first gate. The non-volatile memory cell is programmed to an initial program state that corresponds to meeting or exceeding a target threshold voltage for the first gate of the non-volatile memory cell. The target threshold voltage corresponds to a target read current. The non-volatile memory cell is read in a first read operation using a read voltage applied to the first gate of the non-volatile memory cell that is less than the target threshold voltage to generate a first read current. The non-volatile memory cell is subjected to additional programming in response to determining that the first read current is greater than the target read current.

Abstract: A memory device that includes a plurality of non-volatile memory cells and a controller. The controller is configured to erase the plurality of memory cells, program each of the memory cells, and for each of the memory cells, measure a threshold voltage applied to the memory cell corresponding to a target current through the memory cell in a first read operation, re-measure a threshold voltage applied to the memory cell corresponding to the target current through the memory cell in a second read operation, and identify the memory cell as defective if a difference between the measured threshold voltage and the re-measured threshold voltage exceeds a predetermined amount.

Abstract: The application provides nanoporous separator membranes, HF-scavenging membranes, and moisture-absorbing membranes comprising aramid microfibers and aramid nanofibers. Also provided are rapid methods of preparing nanoporous separator membranes and moisture-absorbing membranes. Batteries, battery systems and visual indicators comprising a membrane of the application and are provided.

Abstract: A method of improving stability of a memory device having a controller configured to program each of a plurality of non-volatile memory cells within a range of programming states bounded by a minimum program state and a maximum program state. The method includes testing the memory cells to confirm the memory cells are operational, programming each of the memory cells to a mid-program state, and baking the memory device at a high temperature while the memory cells are programmed to the mid-program state. Each memory cell has a first threshold voltage when programmed in the minimum program state, a second threshold voltage when programmed in the maximum program state, and a third threshold voltage when programmed in the mid-program state. The third threshold voltage is substantially at a mid-point between the first and second threshold voltages, and corresponds to a substantially logarithmic mid-point of read currents.

Abstract: A memory device having non-volatile memory cells and a controller. In response to a first command for erasing and programming a first group of the memory cells, the controller determines the first group can be programmed within substantially 10 seconds of their erasure, erases the first group, and programs the first group within substantially 10 seconds of their erasure. In response to a second command for erasing and programming a second group of the memory cells, the controller determines that the second group cannot be programmed within substantially 10 seconds of their erasure, divides the second group into subgroups of the memory cells each of which can be programmed within substantially 10 seconds of their erasure, and for each of the subgroups, erase the subgroup and program the subgroup within substantially 10 seconds of their erasure.

Abstract: A memory device having non-volatile memory cells and a controller. In response to a first command for erasing and programming a first group of the memory cells, the controller determines the first group can be programmed within substantially 10 seconds of their erasure, erases the first group, and programs the first group within substantially 10 seconds of their erasure. In response to a second command for erasing and programming a second group of the memory cells, the controller determines that the second group cannot be programmed within substantially 10 seconds of their erasure, divides the second group into subgroups of the memory cells each of which can be programmed within substantially 10 seconds of their erasure, and for each of the subgroups, erase the subgroup and program the subgroup within substantially 10 seconds of their erasure.

Abstract: A method of improving stability of a memory device having a controller configured to program each of a plurality of non-volatile memory cells within a range of programming states bounded by a minimum program state and a maximum program state. The method includes testing the memory cells to confirm the memory cells are operational, programming each of the memory cells to a mid-program state, and baking the memory device at a high temperature while the memory cells are programmed to the mid-program state. Each memory cell has a first threshold voltage when programmed in the minimum program state, a second threshold voltage when programmed in the maximum program state, and a third threshold voltage when programmed in the mid-program state. The third threshold voltage is substantially at a mid-point between the first and second threshold voltages, and corresponds to a substantially logarithmic mid-point of read currents.

Abstract: A memory device that includes a plurality of non-volatile memory cells and a controller. The controller is configured to erase the plurality of memory cells, program each of the memory cells, and for each of the memory cells, measure a threshold voltage applied to the memory cell corresponding to a target current through the memory cell in a first read operation, re-measure a threshold voltage applied to the memory cell corresponding to the target current through the memory cell in a second read operation, and identify the memory cell as defective if a difference between the measured threshold voltage and the re-measured threshold voltage exceeds a predetermined amount.

Abstract: A memory device with memory cells each including source and drain regions with a channel region there between, a floating gate over a first channel region portion, a select gate over a second channel region portion, a control gate over the floating gate, and an erase gate over the source region. Control circuitry is configured to, for one of the memory cells, apply a first pulse of programming voltages that includes a first voltage applied to the control gate, perform a read operation that includes detecting currents through the channel region for different control gate voltages to determine a target control gate voltage using the detected currents that corresponds to a target current through the channel region, and apply a second pulse of programming voltages that includes a second voltage applied to the control gate that is determined from the first voltage, a nominal read voltage and the target voltage.

Abstract: A bone material removal device, including a tubular element comprising a proximal end and a distal end, a shaft received within the tubular element and comprising a proximal end and a distal end, a cutting tooth movably coupled to the distal end of the shaft and a shaft displacement actuator at the proximal end of the tubular element rotatably coupled to the shaft, wherein at least partial rotation of the actuator in a first direction brings the cutting tooth to travel from a closed retracted position to an open extended position.

Abstract: A memory device with a memory cell and control circuitry. The memory cell includes source and drain regions formed in a semiconductor substrate, with a channel region extending there between. A floating gate is disposed over a first portion of the channel region for controlling its conductivity. A select gate is disposed over a second portion of the channel region for controlling its conductivity. A control gate is disposed over the floating gate. An erase gate is disposed over the source region and adjacent to the floating gate. The control circuitry is configured to perform a program operation by applying a negative voltage to the erase gate for causing electrons to tunnel from the erase gate to the floating gate, and perform an erase operation by applying a positive voltage to the erase gate for causing electrons to tunnel from the floating gate to the erase gate.