Abstract: A pixel includes a photodiode and a readout node for receiving charge transferred from the photodiode. The readout node is configured to have a variable capacitance that is non-linear with respect to a voltage at the readout node. The readout node is resettable. The readout node may be configured to have a lower capacitance when reset to a reset voltage than when getting filled with charge from the photodiode. The readout node may be configured such that the capacitance of the readout node continuously increases as additional charge is received by the readout node after the readout node is reset. The readout node may be configured such that the capacitance of the readout node jumps from a first capacitance to a second capacitance after the readout node has been filled with a certain amount of charge. An image sensor includes a pixel array with a plurality of the pixels.

Abstract: A pixel includes a photodiode, a first transfer gate, a second transfer gate, and a floating diffusion. The pixel may include a storage gate, and the first transfer gate may be controllable to transfer charge from the photodiode to an area under the storage gate. The storage gate is controllable to store the charge in the area under the storage gate and to transfer the charge from the area under the storage gate. The first transfer gate may be controllable among a first biasing condition in which charge is transferable to an area under the first transfer gate, a second biasing condition in which the charge is storable in the area under the first transfer gate, and a third biasing condition in which the charge is transferable out of the area under the first transfer gate. The second transfer gate is controllable to transfer charge to the floating diffusion.

Abstract: A pixel includes a photodiode and a readout node for receiving charge transferred from the photodiode. The readout node is configured to have a variable capacitance that is non-linear with respect to a voltage at the readout node. The readout node is resettable. The readout node may be configured to have a lower capacitance when reset to a reset voltage than when getting filled with charge from the photodiode. The readout node may be configured such that the capacitance of the readout node continuously increases as additional charge is received by the readout node after the readout node is reset. The readout node may be configured such that the capacitance of the readout node jumps from a first capacitance to a second capacitance after the readout node has been filled with a certain amount of charge. An image sensor includes a pixel array with a plurality of the pixels.

Abstract: An image sensor includes a pixel array, a plurality of memory blocks, a plurality of phase-locked loops, and a plurality of serializers. The pixel array includes a plurality of pixels. The plurality of memory blocks store digital pixel data converted from analog pixel signals output from the pixel array, and are located to a particular side of the pixel array. The plurality of phase-locked loops are located to the particular side of the pixel array. The plurality of serializers are located to the particular side of the pixel array. Each serializer of the plurality of serializers is connected to receive parallel data input from one or more corresponding memory blocks of the plurality of memory blocks and is configured to convert the parallel data input to serial data output using a corresponding plurality of clock signals from a corresponding phase-locked loop of the plurality of phase-locked loops.

Abstract: An image sensor includes a pixel array, a plurality of memory blocks, a plurality of phase-locked loops, and a plurality of serializers. The pixel array includes a plurality of pixels. The plurality of memory blocks store digital pixel data converted from analog pixel signals output from the pixel array, and are located to a particular side of the pixel array. The plurality of phase-locked loops are located to the particular side of the pixel array. The plurality of serializers are located to the particular side of the pixel array. Each serializer of the plurality of serializers is connected to receive parallel data input from one or more corresponding memory blocks of the plurality of memory blocks and is configured to convert the parallel data input to serial data output using a corresponding plurality of clock signals from a corresponding phase-locked loop of the plurality of phase-locked loops.

Abstract: An image sensor includes at least one pixel with a transfer gate that is controllable among at least three biasing conditions, including a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confined in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. The pixel includes a p+ type doped barrier implant located at least partially under a portion of the transfer gate, and a pinned charge transfer barrier located on the opposite side of the transfer gate from the photodiode that includes a p+ type doped region and an n-type doped region. The image sensor can operate in a global shutter mode and/or a rolling shutter mode.

Abstract: A camera includes a first processing device, a second processing device, and an image sensor that has a first plurality of ports connected to the first processing device and a second plurality of ports connected to the second processing device. A method includes providing first data from the first plurality of ports of the image sensor to the first processing device, and providing second data from the second plurality of ports of the image sensor to the second processing device. Another camera includes a first memory, a second memory, and an image sensor having a first plurality of ports connected to the first memory and a second plurality of ports connected to the second memory. A method includes providing first data from the first plurality of ports to the first memory and providing second data from the second plurality of ports to the second memory.

Abstract: An image sensor includes at least one pixel with a transfer gate that is controllable among at least three biasing conditions, including a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confined in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. The pixel includes a p+ type doped barrier implant located at least partially under a portion of the transfer gate, and a pinned charge transfer barrier located on the opposite side of the transfer gate from the photodiode that includes a p+ type doped region and an n-type doped region. The image sensor can operate in a global shutter mode and/or a rolling shutter mode.

Abstract: An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel.

Abstract: A camera includes a first processing device, a second processing device, and an image sensor that has a first plurality of ports connected to the first processing device and a second plurality of ports connected to the second processing device. A method includes providing first data from the first plurality of ports of the image sensor to the first processing device, and providing second data from the second plurality of ports of the image sensor to the second processing device. Another camera includes a first memory, a second memory, and an image sensor having a first plurality of ports connected to the first memory and a second plurality of ports connected to the second memory. A method includes providing first data from the first plurality of ports to the first memory and providing second data from the second plurality of ports to the second memory.

Abstract: An image sensor includes at least one pixel with a transfer gate that is controllable among at least three biasing conditions, including a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confined in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. The pixel includes a p+ type doped barrier implant located at least partially under a portion of the transfer gate, and a pinned charge transfer barrier located on the opposite side of the transfer gate from the photodiode that includes a p+ type doped region and an n-type doped region. The image sensor can operate in a global shutter mode and/or a rolling shutter mode.

Abstract: A pipelined readout method in an image sensor includes receiving one or more signals from a pixel of a row of a pixel array into a column storage at least partially during a time that a previously sampled amplified output of the column storage that is based on signals provided by a previous pixel of a previously read out row of the pixel array is converted from analog to digital by an analog-to-digital conversion circuit. The method further includes performing, by the analog-to-digital conversion circuit, analog-to-digital conversion of a sampled amplified output of the column storage that is based on the one or more signals from the pixel at least partially during a time that the column storage receives at least one signal from a another pixel of a subsequently read out row of the pixel array.

Abstract: An image sensor includes at least one pixel with a transfer gate that is controllable among at least three biasing conditions, including a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confined in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. The pixel includes a p+ type doped barrier implant located at least partially under a portion of the transfer gate, and a pinned charge transfer barrier located on the opposite side of the transfer gate from the photodiode that includes a p+ type doped region and an n-type doped region. The image sensor can operate in a global shutter mode and/or a rolling shutter mode.

Abstract: An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel.

Abstract: An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel.

Abstract: An image sensor includes a pixel array with a plurality of pixels. Two or more rows of pixels in the pixel array share a control line in the pixel array, and pixels of the two or more rows of pixels that are in a same column of the pixel array are connected to provide output to different column readout lines. A method includes providing a control signal over a control line within a pixel array to pixels in two or more rows of the pixel array, and reading out signals from the pixels in the two or more rows at a same time over different column readout lines. An image sensor includes a pixel array with a plurality of pixels, and two or more columns of pixels in the pixel array may share a control line in the pixel array for receiving a control signal.

Abstract: An image sensor includes a pixel array with a plurality of pixels. A pixel includes a photodiode, a first transfer gate, a storage gate, and a second transfer gate. The first transfer gate is controllable to transfer charge from the photodiode to under the storage gate. The storage gate is connected to a readout circuit to allow the readout circuit to read out a voltage level of a potential at the storage gate. The second transfer gate is controllable to transfer charge from under the storage gate. A method includes controlling the first transfer gate to transfer charge from the photodiode to under the storage gate, reading out a voltage level of a potential at the storage gate using the readout circuit that is connected to the storage gate, and controlling the second transfer gate to drain charge from under the storage gate.

Abstract: A pipelined readout method in an image sensor includes receiving one or more signals from a pixel of a row of a pixel array into a column storage at least partially during a time that a previously sampled amplified output of the column storage that is based on signals provided by a previous pixel of a previously read out row of the pixel array is converted from analog to digital by an analog-to-digital conversion circuit. The method further includes performing, by the analog-to-digital conversion circuit, analog-to-digital conversion of a sampled amplified output of the column storage that is based on the one or more signals from the pixel at least partially during a time that the column storage receives at least one signal from a another pixel of a subsequently read out row of the pixel array.

Abstract: An image sensor includes a pixel array, a plurality of column readout lines, and a plurality of column readout circuits. The pixel array includes a plurality of pixels arranged in a plurality of rows and a plurality of columns. Each of the plurality of column readout lines is connected to a corresponding at least two pixels of the plurality of pixels. Each of the plurality of column readout circuits is connected to a corresponding column readout line of the plurality of column readout lines and includes an amplifier, a first capacitor connected between the corresponding column readout line and an input of the amplifier, and a second capacitor connected between the corresponding column readout line and the input of the amplifier.

Abstract: An image sensor includes a pixel array with a plurality of pixels. Two or more rows of pixels in the pixel array share a control line in the pixel array, and pixels of the two or more rows of pixels that are in a same column of the pixel array are connected to provide output to different column readout lines. A method includes providing a control signal over a control line within a pixel array to pixels in two or more rows of the pixel array, and reading out signals from the pixels in the two or more rows at a same time over different column readout lines. An image sensor includes a pixel array with a plurality of pixels, and two or more columns of pixels in the pixel array may share a control line in the pixel array for receiving a control signal.