Patents by Inventor Alexander Philippou
Alexander Philippou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030323Abstract: A power semiconductor device and a method of producing a power semiconductor device are presented. The power semiconductor device is, for example, embodied as an IGBT and includes a deep cross trench which extends below trenches that include, e.g., control and source trench electrodes.Type: ApplicationFiled: July 14, 2023Publication date: January 25, 2024Inventors: Alexander Philippou, Hans-Jürgen Thees, Thorsten Arnold
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Publication number: 20230307499Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.Type: ApplicationFiled: June 1, 2023Publication date: September 28, 2023Inventors: Alexander Philippou, Roman Baburske, Christian Jaeger, Johannes Georg Laven, Helmut Maeckel
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Patent number: 11742417Abstract: A power semiconductor device first trench structures extending from a first main surface into a semiconductor body up to a first depth. The first trench structures extend in parallel along a first lateral direction. Each first trench structure includes a first dielectric and a first electrode. The power semiconductor device further includes second trench structures extending from the first main surface into the semiconductor body up to a second depth that is smaller than the first depth. The second trench structures extend in parallel along a second lateral direction and intersect the first trenches at intersection positions. Each second trench structure includes a second dielectric and a second electrode. The second dielectric is arranged between the first electrode and the second electrode at the intersection positions.Type: GrantFiled: August 6, 2021Date of Patent: August 29, 2023Assignee: Infineon Technologies AGInventors: Thorsten Arnold, Roman Baburske, Ilaria Imperiale, Alexander Philippou, Hans-Juergen Thees
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Publication number: 20230207673Abstract: A power semiconductor device includes: a drift region; a plurality of IGBT cells each having a plurality of trenches extending into the drift region along a vertical direction and laterally confining at least one active mesa which includes an upper section of the drift region; and an electrically floating barrier region of an opposite conductivity type as the drift region and spatially confined, in and against the vertical direction, by the drift region. A total volume of all active mesas is divided into first and second shares, the first share not laterally overlapping with the barrier region and the second share laterally overlapping with the barrier region. The first share carries the load current at least within a range of 0% to 100% of a nominal load current. The second share carries the load current if the load current exceeds at least 0.5% of the nominal load current.Type: ApplicationFiled: February 21, 2023Publication date: June 29, 2023Inventors: Antonio Vellei, Markus Beninger-Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven, Alexander Philippou, Francisco Javier Santos Rodriguez
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Patent number: 11682700Abstract: An power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.Type: GrantFiled: March 22, 2021Date of Patent: June 20, 2023Assignee: Infineon Technologies AGInventors: Alexander Philippou, Roman Baburske, Christian Jaeger, Johannes Georg Laven, Helmut Maeckel
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Patent number: 11610986Abstract: A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.Type: GrantFiled: June 17, 2021Date of Patent: March 21, 2023Assignees: Infineon Technologies AG, Infineon Technologies Dresden GmbH & Co. KGInventors: Matteo Dainese, Alexander Philippou, Markus Beninger-Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger, Johannes Georg Laven, Caspar Leendertz, Frank Dieter Pfirsch
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Patent number: 11594621Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body with a drift region of a first conductivity type; forming a plurality of trenches extending into the semiconductor body along a vertical direction and arranged adjacent to each other along a first lateral direction; providing a mask arrangement at the semiconductor body, the mask arrangement having a lateral structure according to which some of the trenches are exposed and at least one of the trenches is covered by the mask arrangement along the first lateral direction; forming, below bottoms of the exposed trenches, a plurality of doping regions of a second conductivity type complementary to the first conductivity type; removing the mask arrangement; and extending the plurality of doping regions in parallel to the first lateral direction such that the plurality of doping regions overlap and form a barrier region of the second conductivity type adjacent to the bottoms of the exposed trenches.Type: GrantFiled: November 3, 2020Date of Patent: February 28, 2023Assignee: Infineon Technologies AGInventors: Antonio Vellei, Markus Beninger-Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven, Alexander Philippou, Francisco Javier Santos Rodriguez
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Patent number: 11581428Abstract: A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.Type: GrantFiled: October 23, 2020Date of Patent: February 14, 2023Assignee: Infineon Technologies AGInventors: Alexander Philippou, Markus Beninger-Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven, Francisco Javier Santos Rodriguez, Antonio Vellei, Caspar Leendertz, Christian Philipp Sandow
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Patent number: 11581429Abstract: A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.Type: GrantFiled: June 17, 2021Date of Patent: February 14, 2023Assignees: Infineon Technologies AG, Infineon Technologies Dresden GmbH & Co. KGInventors: Matteo Dainese, Alexander Philippou, Markus Beninger-Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger, Johannes Georg Laven, Caspar Leendertz, Frank Dieter Pfirsch
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Patent number: 11538906Abstract: A power device includes: a diode section; a semiconductor body; a drift region extending into the diode section; trenches in the diode section and extending along a vertical direction into the semiconductor body, two adjacent trenches defining a respective mesa portion in the semiconductor body; a body region in the mesa portions; in the diode section, a barrier region between the body and drift regions and having a dopant concentration at least 100 times greater than an average dopant concentration of the drift region and a dopant dose greater than that of the body region. The barrier region has a lateral structure according to which at least 50% of the body region in the diode section is coupled to the drift region at least by the barrier region, and at least 5% of the body region in the diode section is coupled to the drift region without the barrier region.Type: GrantFiled: September 10, 2020Date of Patent: December 27, 2022Assignee: Infineon Technologies AGInventors: Johannes Georg Laven, Roman Baburske, Alexander Philippou, Christian Philipp Sandow
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Patent number: 11398472Abstract: An RC IGBT with an n-barrier region in a transition section between a diode section and an IGBT section is presented.Type: GrantFiled: September 10, 2020Date of Patent: July 26, 2022Assignee: Infineon Technologies AGInventors: Johannes Georg Laven, Roman Baburske, Frank Dieter Pfirsch, Alexander Philippou, Christian Philipp Sandow
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Patent number: 11257914Abstract: A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.Type: GrantFiled: October 9, 2020Date of Patent: February 22, 2022Assignee: Infineon Technologies AGInventors: Vera Van Treek, Roman Baburske, Christian Jaeger, Christian Robert Mueller, Franz-Josef Niedernostheide, Frank Dieter Pfirsch, Alexander Philippou, Judith Specht
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Publication number: 20220052190Abstract: A power semiconductor device first trench structures extending from a first main surface into a semiconductor body up to a first depth. The first trench structures extend in parallel along a first lateral direction. Each first trench structure includes a first dielectric and a first electrode. The power semiconductor device further includes second trench structures extending from the first main surface into the semiconductor body up to a second depth that is smaller than the first depth. The second trench structures extend in parallel along a second lateral direction and intersect the first trenches at intersection positions. Each second trench structure includes a second dielectric and a second electrode. The second dielectric is arranged between the first electrode and the second electrode at the intersection positions.Type: ApplicationFiled: August 6, 2021Publication date: February 17, 2022Inventors: Thorsten Arnold, Roman Baburske, Ilaria Imperiale, Alexander Philippou, Hans-Juergen Thees
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Publication number: 20210313460Abstract: A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.Type: ApplicationFiled: June 17, 2021Publication date: October 7, 2021Inventors: Matteo Dainese, Alexander Philippou, Markus Beninger-Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger, Johannes Georg Laven, Caspar Leendertz, Frank Dieter Pfirsch
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Patent number: 11114528Abstract: A power transistor having a semiconductor barrier region is presented. A power unit cell of the power transistor has at least two trenches that may both extend into the semiconductor barrier region. The semiconductor barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The semiconductor barrier region can be electrically floating. Further, the at least two trenches may both increase in width along their respective extension into the semiconductor body.Type: GrantFiled: March 28, 2019Date of Patent: September 7, 2021Assignee: Infineon Technologies Austria AGInventors: Matteo Dainese, Markus Beninger-Bina, Alexander Philippou
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Patent number: 11075290Abstract: A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.Type: GrantFiled: May 10, 2019Date of Patent: July 27, 2021Assignees: Infineon Technologies AG, Infineon Technologies Dresden GmbH & Co. KGInventors: Matteo Dainese, Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger, Johannes Georg Laven, Caspar Leendertz, Frank Dieter Pfirsch
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Publication number: 20210210604Abstract: An power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.Type: ApplicationFiled: March 22, 2021Publication date: July 8, 2021Inventors: Alexander Philippou, Roman Baburske, Christian Jaeger, Johannes Georg Laven, Helmut Maeckel
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Publication number: 20210119003Abstract: A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.Type: ApplicationFiled: October 9, 2020Publication date: April 22, 2021Inventors: Vera Van Treek, Roman Baburske, Christian Jaeger, Christian Robert Mueller, Franz-Josef Niedernostheide, Frank Dieter Pfirsch, Alexander Philippou, Judith Specht
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Patent number: 10978560Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.Type: GrantFiled: March 28, 2019Date of Patent: April 13, 2021Assignee: Infineon Technologies AGInventors: Alexander Philippou, Roman Baburske, Christian Jaeger, Johannes Georg Laven, Helmut Maeckel
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Publication number: 20210083051Abstract: A power device includes: a diode section; a semiconductor body; a drift region extending into the diode section; trenches in the diode section and extending along a vertical direction into the semiconductor body, two adjacent trenches defining a respective mesa portion in the semiconductor body; a body region in the mesa portions; in the diode section, a barrier region between the body and drift regions and having a dopant concentration at least 100 times greater than an average dopant concentration of the drift region and a dopant dose greater than that of the body region. The barrier region has a lateral structure according to which at least 50% of the body region in the diode section is coupled to the drift region at least by the barrier region, and at least 5% of the body region in the diode section is coupled to the drift region without the barrier region.Type: ApplicationFiled: September 10, 2020Publication date: March 18, 2021Inventors: Johannes Georg Laven, Roman Baburske, Alexander Philippou, Christian Philipp Sandow