Abstract: In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.

Abstract: A method for producing a metal layer with a given thickness includes the step of measuring an electrical resistance of the metal layer via connections on a starting layer provided under the metal layer. The resistance measurement is performed during or after the deposition of the metal layer. The layer thickness of the deposited metal layer is determined from the resistance measurement. Depending on the thickness of the already deposited metal layer, the deposition process is continued or repeated until a metal layer with a desired thickness is produced.

Abstract: A method for producing a metal layer with a given thickness includes the step of measuring an electrical resistance of the metal layer via connections on a starting layer provided under the metal layer. The resistance measurement is performed during or after the deposition of the metal layer. The layer thickness of the deposited metal layer is determined from the resistance measurement. Depending on the thickness of the already deposited metal layer, the deposition process is continued or repeated until a metal layer with a desired thickness is produced.

Abstract: An apparatus for transferring structures to a layer to be patterned. The apparatus has a base element and at least one radiation-conducting structure projecting from the base element. The radiation-conducting structure guides radiation to an exit aperture facing away from the base element and the shape of which structure is matched to that of the structure to be transferred.

Abstract: A microelectronic structure is formed on a first layer or a substrate. The first layer or substrate is formed with grooves and contact openings. A metal nitride layer of TiN or WN covers the first layer or the substrate at least partially. An alpha-phase tantalum layer is deposited on top of the metal nitride layer. Finally, a metal is deposited to completely fill the grooves and the contact openings.

Abstract: An optical near-field probe (1) includes a carrier component (10), which carries a tip (40), and has only one membrane (11, 20), transparent at least in the area of the tip (40), which is mounted on the light emission surface (9) of an optical waveguide (2) that is made of a rigid material such as glass or plastic. The dimensions of the membrane (11, 20), at least in one direction in the membrane plane, are less than or equal to the diameter of the optical waveguide (2). To position the tip (40) over the core (3) of the optical waveguide (2), optical methods can be used or the membrane and optical waveguide can be provided with locating elements.

Abstract: A sensor head (1) is described, which has a spacer (5b) between a carrier element (2) and the spring arm (7), which, perhaps carries a sensor tip (9) at the free end; the spacer defines the distance d between the spring arm (7) and the carrier element (2). In a preferred embodiment, the spacer (5b) comprises a sacrificial layer (5a), which is etched out, except for the spacer (5b), after the formation of a corresponding layer system between the spring arm (7) and the carrier element (2). The carrier element (2) and the spring arm (7) are each provided with a reflecting layer (4 and 6). In accordance with another specific embodiment, plasmonactive layers can also be provided.