Abstract: A method of determining the endpoint of a planarizing process is disclosed. An endpoint detection signal is selectively sampled from at least one predetermined location within a planarizing region defined on a planarizing web. Planarization is stopped when the endpoint criterion based on the endpoint detection signal is detected.

Abstract: A system and method for machining data management is provided. Vibration and operation data are gathered from a machine tool and sent to a processing unit. The processing unit defines operation-specific vibration profiles, and generates an operation-specific data line for each profile. The data lines are stored in a memory for later retrieval. An output device is used to retrieve the data lines and plot them over a time domain to create an operation-specific data matrix useful in manufacturing operations analysis.

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

Abstract: A process for planarizing a process layer having structures and has been applied to a working surface of a semiconductor device, includes abrading the process layer down to the working surface using a polishing device. The working surface is planarized, and a defect density in the working surface is minimized and the polishing process is topology-independent.

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

Abstract: The invention provides slurry-less chemical-mechanical polishing processes which are effective in planarizing oxide materials, especially siliceous oxides, even where the starting oxide layer has significant topographical variation. The processes of the invention are preferably characterized by the use of a fixed abrasive polishing element and by use of an aqueous liquid medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide material on the substrate. The method reduces or eliminates the transfer of topographic variations to levels below the desired planarization level. The processes enable elimination of special endpoint detection techniques. The processes are also especially suitable for polishing interlevel dielectrics.

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

Abstract: The invention provides fixed-abrasive chemical-mechanical polishing processes which are effective in rapidly reducing thickness of oxide layers, especially siliceous oxides. The processes of the invention are preferably characterized by at least one step involving simultaneous use of a fixed-abrasive polishing element and an aqueous liquid medium containing an abrasive. Where the original oxide layer has topographic variation, the thickness reduction technique of the invention may be preceeded by topography reduction step using a fixed-abrasive and an aqueous medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide layer on the substrate.

Abstract: The invention provides fixed-abrasive chemical-mechanical polishing processes which are effective in rapidly reducing thickness of oxide layers, especially siliceous oxides. The processes of the invention are preferably characterized by at least one step involving simultaneous use of a fixed-abrasive polishing element and an aqueous liquid medium containing an abrasive. Where the original oxide layer has topographic variation, the thickness reduction technique of the invention may be preceeded by topography reduction step using a fixed-abrasive and an aqueous medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide layer on the substrate.

Abstract: A method for polishing a dielectric layer containing silicon provides a fluorine-based inorganic compound during a polishing process. The dielectric layer is polished in the presence of the fluorine based compound to accelerate a polishing rate of the dielectric layer.

Abstract: The invention provides slurry-less chemical-mechanical polishing processes which are effective in planarizing oxide materials, especially siliceous oxides, even where the starting oxide layer has significant topographical variation. The processes of the invention are preferably characterized by the use of a fixed abrasive polishing element and by use of an aqueous liquid medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide material on the substrate. The method reduces or eliminates the transfer of topographic variations to levels below the desired planarization level. The processes enable elimination of special endpoint detection techniques. The processes are also especially suitable for polishing interlevel dielectrics.

Abstract: A boring apparatus comprises an elongate support body adapted to be rotatable by a machine tool spindle, a cutter mounting body releasably securable to the end of the support body remote from the machine tool spindle and is provided with a cutter guide which slidably receives a cutter therein which is constrained by the guide to be displaceable in an adjustment direction inclined to the rotational axis of the elongate support body. An adjustment member is disposed within the elongate support body and is movable along an axis substantially coaxial with the rotational axis of the elongate support body, and an interengaging coupling on the adjustment member and on the cutting tool is provided whereby movement of the adjustment member along its axis of motion induces movement of the cutting tool in its adjustment direction.