Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.

Abstract: A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

Abstract: A method for nonintrusive scanning of cargo containers quay side while the containers are being transferred between ship and land transportation utilizing a mobile cargo container handling buffer crane having a bridge crane mounted thereon for transferring cargo containers between a ship and land transportation with an intermediate transfer position whereby a suspended container can be noninvasively inspected by a longitudinally reciprocating container traversing radiation emitter apparatus.

Abstract: Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

Abstract: The present invention generally provides a batch processing chamber having a quartz chamber, at least one heater block, an inject assembly coupled to one side of the quartz chamber, and an exhaust assembly coupled to an opposite side of the quartz chamber. In one embodiment, the inject assembly is independently temperature controlled. In another embodiment, at least one temperature sensor is disposed outside the quartz chamber.

Abstract: An apparatus for batch processing of a wafer is disclosed. In one embodiment the batch processing apparatus includes a bell jar furnace having a diffuser disposed between gas inlets and the substrate positioned within the furnace to direct flows within the chamber around the perimeter of the substrate.

Abstract: A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.

Abstract: A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.

Abstract: A method and apparatus for a chemical vapor deposition (CVD) chamber provides uniform heat distribution, uniform distribution of process chemicals in the CVD chamber, and minimization of by-product and condensate residue in the chamber. The improvements include a processing chamber comprising a chamber body, a base, and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on a chamber lid, the gas delivery system comprising an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, an exhaust system mounted at the base, a heating element positioned to heat the adapter ring; and a heating element positioned to heat a portion of the exhaust system.

Abstract: A method and apparatus for a CVD chamber that provides uniform heat distribution, efficient precursor delivery, uniform distribution of process and inert chemicals, and thermal management of residues in the chamber and exhaust surfaces by changing the mechanical design of a single wafer thermal CVD chamber. The improvements include a processing chamber comprising a chamber body and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on the chamber lid, the gas delivery system comprising a lid, an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, a heating element positioned to heat the adapter ring to a desired temperature, and a temperature controlled exhaust system.

Abstract: A buffer crane for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers above dockside cargo transport operations and for moving cargo containers therebetween by means of a slewing jib crane secured to one edge of said landing deck.

Abstract: A buffer crane for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers above dockside cargo transport operations and for moving cargo containers therebetween by means of a straddle crane mounted on rails on said landing deck.

Abstract: A method for buffer crane operation for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers in buffer operation above dockside cargo transport operations and for moving cargo containers therebetween by means of a dedicated crane engaged with said landing deck.

Abstract: A buffer crane for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers above dockside cargo transport operations and for moving cargo containers therebetween by means of a bridge crane mounted on framework rails which extend past the lateral edges of said landing deck.

Abstract: Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

Abstract: A buffer crane for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers above dockside cargo transport operations and for moving cargo containers therebetween by means of a slewing jib crane secured to one edge of said landing deck.

Abstract: A buffer crane for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers above dockside cargo transport operations and for moving cargo containers therebetween by means of a bridge crane mounted on framework rails which extend past the lateral edges of said landing deck.

Abstract: A method for buffer crane operation for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers in buffer operation above dockside cargo transport operations and for moving cargo containers therebetween by means of a dedicated crane engaged with said landing deck.

Abstract: A buffer crane for supplementing a quay crane operation and formed to operate thereunder with a landing deck for supporting a multiple of cargo containers above dockside cargo transport operations and for moving cargo containers therebetween by means of a straddle crane mounted on rails on said landing deck.

Abstract: Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.