Abstract: A workpiece processing apparatus allowing the extraction of charged ions through an extraction aperture and the passage of radicals and reactive neutrals through vents is disclosed. Plasma sheath modulation and electric fields may be used to determine the extraction angle of the charged ions. The extraction plate also includes a plurality vents, separate from the extraction aperture, wherein the vents do not have a line of sight path from the interior of the plasma chamber to the exterior. In this way, any ions that enter the vents are neutralized prior to exiting the vents. A cover sheet may be used to select which vents are used for a particular process.

Abstract: An ion implanter that includes an ion source to generate an ion beam, a platen disposed in a process chamber to support a workpiece that is treated with the ion beam, and a plasma flood gun that results in fewer particles in the process chamber is disclosed. The plasma flood gun includes at least one plasma chamber, each having at least one aperture through which low energy ions and electrons are emitted. A sweeper is located near the aperture, positioned so as to be between the aperture and the upstream components. The sweeper is heated using resistive elements or a halogen lamp so as to elevate its temperature, which limited the amount of deposition that occurs on the sweeper.

Abstract: A method of reducing defects in a beamline ion implanter. The method may entail, after performing an implantation procedure on a set of substrates disposed in a process chamber of a beamline of the ion implanter, using a first ion beam comprising a first ion species, the additional procedure of: performing a beam conditioning operation of at least a portion of the beamline. The beam conditioning operation may include generating a second ion beam and conducting the second ion beam to the process chamber along a direction of propagation, and moving the second ion beam within the process chamber, in a sweep direction, at an angle with respect to the direction of propagation, wherein a targeted region of the process chamber is impacted by the second ion beam.

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include a screen plate, disposed immediately adjacent to the side of the plasma chamber, the screen plate having an angled portion that comprises a screen aperture, to extract an angled ion beam towards a first end of the extraction assembly. The extraction assembly may also include an acceleration plate, disposed outside of the screen plate, the acceleration plate having a middle portion that is shaped according to an outer surface of the screen plate. As such, the acceleration plate may include an acceleration aperture, aligned with the screen aperture, and the acceleration plate may include a distal portion adjacent to the middle portion, the distal portion having a distal end that extends beyond an end of the screen plate.

Abstract: A system and method for improving the operating range of an ion source for the extraction of an ion beam with a high tilt angle are disclosed. The system includes a semiconductor processing system that includes an extraction plate having an extraction aperture that is not parallel to the surface of the workpiece. An extraction electrode is disposed outside the ion source near the extraction aperture to attract ions toward the workpiece. The voltage applied to this extraction electrode may be varied to affect the extracted ion beam. The extraction aperture may comprise an elongated slot and the extraction electrode may be separated into two pieces, one on each side of the elongated slot. In this way, the two pieces of the extraction electrode may be independently biased. This feature may also allow variation of the tilt angle.

Abstract: An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

Abstract: Disclosed herein are systems and methods for high throughput angled ion processing. In one approach, a processing apparatus may include a chamber operable to contain a plasma, the chamber defined by a plurality of sidewalls, and a plate assembly arranged along a side of the chamber. The plate assembly may include a plate defining a plurality of apertures, wherein ions are extracted through the plurality of apertures and delivered to a substrate at a non-zero angle relative to a perpendicular extending from the substrate. The processing apparatus may further include an actuator operable to dither the moveable plates and the substrate relative to one another as the ions are extracted through the plurality of apertures.

Abstract: Disclosed herein are systems and methods for high throughput angled ion processing. In one approach, a processing apparatus may include a chamber operable to contain a plasma, the chamber defined by a plurality of sidewalls, a first end wall, and a second end wall opposite the first end wall, an extraction assembly coupled to the second end wall, the extraction assembly comprising a plurality of apertures, wherein ions are extracted through the plurality of apertures are delivered to a substrate at a non-zero angle relative to a perpendicular extending from the substrate, and wherein the substrate is positioned external to the chamber. The processing apparatus may further include an actuator operable to shift the substrate relative to the moveable plates as the ions are extracted through the plurality of apertures.

Abstract: A semiconductor processing system with improved plasma density is disclosed. The system includes a plasma chamber having a base, chamber walls and a top wall. An antenna is used to generate RF energy that is inductively coupled into the plasma chamber. The antenna comprises a plurality of coils that are proximate a dielectric window. One or more RF blockers are disposed adjacent to the dielectric window to block some of the RF energy from entering the plasma chamber. If the RF blocker is placed near a region of high plasma density, the density in that region may be reduced, improving the uniformity of the plasma density within the plasma chamber. Further, the RF blockers may have openings and may also be overlapped to create varying degrees of blocking.

Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

Abstract: An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

Abstract: An ion implanter that includes an ion source to generate an ion beam, a platen disposed in a process chamber to support a workpiece that is treated with the ion beam, and a plasma flood gun that results in fewer particles in the process chamber is disclosed. The plasma flood gun includes at least one plasma chamber, each having at least one aperture through which low energy ions and electrons are emitted. A sweeper is located near the aperture, positioned so as to be between the aperture and the upstream components. The sweeper is heated using resistive elements or a halogen lamp so as to elevate its temperature, which limited the amount of deposition that occurs on the sweeper.

Abstract: An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.

Abstract: An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

Abstract: An apparatus for directional processing is disclosed. The apparatus includes a workpiece support and an ion source, having a plurality of walls. An extraction aperture is disposed on at least one of the plurality of walls. In certain embodiments, the plurality of walls defines a hollow region. The hollow region is located above the portion of the workpiece that is being processed, allowing the etching byproducts can be evacuated without depositing on the ion source. The shape of the hollow region may be modified to further reduce the amount of deposition on the hollow ion source. Additionally, a pump may be disposed within or above the hollow region to facilitate the removal of the etching byproducts. In other embodiments, the extraction aperture of the ion source may be disposed at a corner of the plasma chamber.

Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.