Patents by Inventor Alexandre Likhanskii

Alexandre Likhanskii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10790116
    Abstract: An apparatus may include a main chamber, the main chamber comprising a plurality of electrodes; an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber along a first direction; and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance axis and the exit axis define a beam bend of at least 30 degrees therebetween.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: September 29, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Publication number: 20200294755
    Abstract: An apparatus may include a housing including an entrance aperture, to receive an ion beam. The apparatus may include an exit aperture, disposed in the housing, downstream to the entrance aperture, the entrance aperture and the exit aperture defining a beam axis, extending therebetween. The apparatus may include an electrodynamic mass analysis assembly disposed in the housing and comprising an upper electrode assembly, disposed above the beam axis, and a lower electrode assembly, disposed below the beam axis. The apparatus may include an AC voltage assembly, electrically coupled to the upper electrode assembly and the lower electrode assembly, wherein the upper electrode assembly is arranged to receive an AC signal from the AC voltage assembly at a first phase angle, and wherein the lower electrode assembly is arranged to receive the AC signal at a second phase angle, the second phase angle 180 degrees shifted from the first phase angle.
    Type: Application
    Filed: March 15, 2019
    Publication date: September 17, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Frank Sinclair, Costel Biloiu, Joseph C. Olson, Alexandre Likhanskii
  • Publication number: 20200294750
    Abstract: An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 17, 2020
    Inventors: Svetlana B. Radovanov, Bon-Woong Koo, Alexandre Likhanskii
  • Patent number: 10763072
    Abstract: An apparatus may include a housing including an entrance aperture, to receive an ion beam. The apparatus may include an exit aperture, disposed in the housing, downstream to the entrance aperture, the entrance aperture and the exit aperture defining a beam axis, extending therebetween. The apparatus may include an electrodynamic mass analysis assembly disposed in the housing and comprising an upper electrode assembly, disposed above the beam axis, and a lower electrode assembly, disposed below the beam axis. The apparatus may include an AC voltage assembly, electrically coupled to the upper electrode assembly and the lower electrode assembly, wherein the upper electrode assembly is arranged to receive an AC signal from the AC voltage assembly at a first phase angle, and wherein the lower electrode assembly is arranged to receive the AC signal at a second phase angle, the second phase angle 180 degrees shifted from the first phase angle.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: September 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Frank Sinclair, Costel Biloiu, Joseph C. Olson, Alexandre Likhanskii
  • Publication number: 20200243308
    Abstract: A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.
    Type: Application
    Filed: April 17, 2020
    Publication date: July 30, 2020
    Inventors: Alexandre Likhanskii, Maureen Petterson, John Hautala, Anthony Renau, Christopher A. Rowland, Costel Biloiu
  • Patent number: 10714301
    Abstract: Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: July 14, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Shengwu Chang, Frank Sinclair, Alexandre Likhanskii, Christopher Campbell, Robert C. Lindberg
  • Patent number: 10665433
    Abstract: A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: May 26, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alexandre Likhanskii, Maureen Petterson, John Hautala, Anthony Renau, Christopher A. Rowland, Costel Biloiu
  • Patent number: 10665415
    Abstract: An apparatus and method are provided. In one embodiment. an apparatus may include a main chamber, where the main chamber includes an electrode assembly. The electrode assembly may include a plurality of electrodes arranged between a chamber entrance and a chamber exit of the main chamber. The apparatus may include a beam tunnel, connected to the chamber entrance, configured to conduct an ion beam to the main chamber; and an electrostatic tuner, disposed in the beam tunnel, the electrostatic tuner comprising at least one tuner electrode, independently coupled to a tuner voltage assembly.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: May 26, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Publication number: 20200161078
    Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 21, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Publication number: 20200161077
    Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 21, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang, Eric D. Hermanson, Nevin H. Clay
  • Publication number: 20200161076
    Abstract: An apparatus is provided. The apparatus may include a main chamber; an entrance tunnel having a propagation axis extending into the main chamber along a first direction; an exit tunnel, connected to the main chamber and defining an exit direction. The entrance tunnel and the exit tunnel may define a beam bend of at least 30 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit aperture, wherein the electrode assembly comprises a lower electrode, disposed on a first side of the beam path, and a plurality of electrodes, disposed on a second side of the beam path, the plurality of electrodes comprising at least five electrodes.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 21, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Publication number: 20200161089
    Abstract: An apparatus may include a main chamber, the main chamber comprising a plurality of electrodes; an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber along a first direction; and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance axis and the exit axis define a beam bend of at least 30 degrees therebetween.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 21, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Publication number: 20200144017
    Abstract: An apparatus and method are provided. In one embodiment. an apparatus may include a main chamber, where the main chamber includes an electrode assembly. The electrode assembly may include a plurality of electrodes arranged between a chamber entrance and a chamber exit of the main chamber. The apparatus may include a beam tunnel, connected to the chamber entrance, configured to conduct an ion beam to the main chamber; and an electrostatic tuner, disposed in the beam tunnel, the electrostatic tuner comprising at least one tuner electrode, independently coupled to a tuner voltage assembly.
    Type: Application
    Filed: November 6, 2018
    Publication date: May 7, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Publication number: 20200126757
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 23, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 10522330
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: December 31, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 10504682
    Abstract: Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: December 10, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Shengwu Chang, Frank Sinclair, Alexandre Likhanskii, Christopher Campbell, Robert C. Lindberg, Eric D. Hermanson
  • Patent number: 10410844
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: September 10, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin Anglin, Brant S. Binns, Peter F. Kurunczi, Jay T. Scheuer, Eric Hermanson, Alexandre Likhanskii
  • Publication number: 20190259560
    Abstract: Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 22, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Shengwu Chang, Frank Sinclair, Alexandre Likhanskii, Christopher Campbell, Robert C. Lindberg, Eric D. Hermanson
  • Patent number: 10290462
    Abstract: An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: May 14, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Alexandre Likhanskii, Svetlana B. Radovanov, Anthony Renau
  • Patent number: 10224181
    Abstract: A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: March 5, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Costel Biloiu, Piotr Lubicki, Tyler Rockwell, Christopher Campbell, Vikram Singh, Kevin M. Daniels, Richard J. Hertel, Peter F. Kurunczi, Alexandre Likhanskii