Abstract: Light-emitting device (100) comprising: a light-emitting diode (102) comprising: an emitting layer comprising a ternary or quaternary semiconductor including a chemical element from column 13 of the periodic table of elements, among Al, Ga and In, of which the atomic composition varies over the thickness of the emitting layer, and/or at least two emitting layers each comprising such a semiconductor, the atomic compositions of said element being different from one layer to another, a device (108) that detects a wavelength and an intensity of a light emitted by the diode, a switched-mode electric power supply (110) able to power the diode with a periodic signal comprising a duty cycle ?, a device (111) for controlling the switched-mode electric power supply which can alter ? and a peak value of the periodic signal according to the values detected and target values.

Abstract: A light-emitting device including: a light-emitting diode including an active zone coupled to phosphorus; a detector of a spectrum and of an intensity of a light to be emitted by the light-emitting diode; a switched-mode electric power supply configured to electrically power the light-emitting diode with a periodic signal with a duty cycle ? such that ??]0;1]; a controller of the switched-mode electric power supply which can alter at least one of a peak value, a period, and the duty cycle ? of the periodic signal according to the spectrum and intensity of the light to be detected and according to target values of the spectrum and of the intensity.

Abstract: The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region (10) with a first type of conductivity, and a second semiconducting region (20) with a second type of conductivity, at least on a portion (220, 210), so as to form a junction semiconducting with the first region (10). This second region (20) has at least a first portion (210) in contact with the first region (10), this first portion (210) comprising at least one first and one second carrier confinement zone (211, 212). The structure (1) comprises at least a first means of polarizing the first portion (210) adapted to apply direct first external polarization to the first portion (210) in order to modify the distribution of carriers of at least one type of conductivity in the first portion (210) relative to the first and second confinement zones (211, 212). The invention also relates to a method of manufacturing a semiconducting structure (1) and a device comprising at least such a structure (1).

Abstract: The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.

Abstract: The invention relates to an optoelectronic device (45) including: light-emitting diodes (LED) including semiconductor elements (24); current-limiting components (50), wherein each component is connected in series to one of the semiconductor elements and has a resistance that increases with the strength of the current.

Abstract: The invention relates to an optoelectronic device (50) including: a semiconductor substrate (14) doped with a first conductivity type; semiconductor contact pads (54) or a semiconductor layer, in contact with a surface of the substrate, doped with a second conductivity type opposite to the first type; conical or frusto-conical wired semiconductor elements (26), doped with the first conductivity type, each element being in contact with one of the contact pads or with the layer; light-emitting semiconductor portions (30), each portion at least partially covering one of the semiconductor elements; and a circuit (S) for polarising the contact pads (54) or the layer. The contact pads or the layer are selected among: aluminium nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.

Abstract: The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region (10) with a first type of conductivity, and a second semiconducting region (20) with a second type of conductivity, at least on a portion (220, 210), so as to form a junction semiconducting with the first region (10). This second region (20) has at least a first portion (210) in contact with the first region (10), this first portion (210) comprising at least one first and one second carrier confinement zone (211, 212). The structure (1) comprises at least a first means of polarising the first portion (210) adapted to apply direct first external polarisation to the first portion (210) in order to modify the distribution of carriers of at least one type of conductivity in the first portion (210) relative to the first and second confinement zones (211, 212). The invention also relates to a method of manufacturing a semiconducting structure (1) and a device comprising at least such a structure (1).

Abstract: Laser device comprising: a laser source including a light emitting structure; a guide structure to deliver light generated by the emitting structure, this guide structure comprising at least a first portion and a second portion, the first portion housing a diffraction grating that forms a reflector of the laser source and cooperates with the emitting structure, the second portion being a waveguide that delivers light generated by the emitting structure and propagated in the first portion. The emitting structure is made using the III-V technology or II-VI technology, and the guide structure is made using the silicon technology.

Abstract: The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.

Abstract: A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Abstract: A waveguide structure includes a supporting substrate and a waveguide having at least one guide layer with a refractive index n1. This layer comprises a zone of birefringence B which comprises voids provided in the thickness of the guide layer filled with a fluid or material having a refractive index n2. These are organized in at least two parallel rows, each row being in a plane perpendicular to the surface of the guide layer and parallel to the direction of propagation of the optical wave in the guide layer; each row extending over a distance equal to or greater than the wavelength of the optical wave; the width of the voids being ? 1/10th of the wavelength of the optical wave; each void within one row being at a distance from an adjacent void of ? 1/10th of the wavelength of the optical wave.

Abstract: The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.

Abstract: The invention relates to a waveguide structure comprising a supporting substrate and a waveguide comprising at least one guide layer having a refractive index n1. This layer comprises a zone of birefringence B which comprises voids provided in the thickness of the guide layer filled with a fluid or material having a refractive index n2.

Abstract: The invention relates to a coupling device comprising a support substrate; a first layer arranged on the support substrate and comprising first patterns produced within the thickness of said first layer, said first patterns being arranged in parallel and periodic rows; a second layer arranged on the first layer and comprising second patterns passing through the thickness of said second layer, said second patterns being arranged in parallel and periodic rows. The direction of periodicity of the rows of the first patterns is perpendicular to the direction of periodicity of the rows of the second patterns. The rows of the first patterns extend over a distance greater than or equal to the wavelength in the void of the optical wave intended to be coupled. The first patterns have a width less than or equal to a tenth of the wavelength of the optical wave intended to be coupled, and the period of these patterns is between 50 nm and 1 ?m. The second patterns are arranged so as to form a periodic diffraction grating.

Abstract: The light-emitting device includes a base substrate and preferably three light-emitting diodes respectively associated with three primary colors and emitting a part of their signal in the direction of the base substrate. The device includes three chromatic photodetectors formed in the base substrate constituting a semiconducting substrate, and each arranged under an associated light-emitting diode. Each chromatic photodetector includes superposed first, second and third layers. The first layer and third layer have a first type of conductivity and the second layer has a second type of conductivity. The device includes a control component connected to the chromatic photodetectors and to the light-emitting diodes to control the global color of the light emitted by the device.

Abstract: The invention relates to a coupling device comprising a support substrate; a first layer arranged on the support substrate and comprising first patterns produced within the thickness of said first layer, said first patterns being arranged in parallel and periodic rows; a second layer arranged on the first layer and comprising second patterns passing through the thickness of said second layer, said second patterns being arranged in parallel and periodic rows. The direction of periodicity of the rows of the first patterns is perpendicular to the direction of periodicity of the rows of the second patterns. The rows of the first patterns extend over a distance greater than or equal to the wavelength in the void of the optical wave intended to be coupled. The first patterns have a width less than or equal to a tenth of the wavelength of the optical wave intended to be coupled, and the period of these patterns is between 50 nm and 1 ?m. The second patterns are arranged so as to form a periodic diffraction grating.

Abstract: Laser device comprising: a laser source (10) including a light emitting structure (1); a guide structure (40) to deliver light generated by the emitting structure, this guide structure (40) comprising at least a first portion (40.1) and a second portion (40.2), the first portion housing a diffraction grating (3) that forms a reflector of the laser source and cooperates with the emitting structure (1), the second portion (40.2) being a waveguide that delivers light generated by the emitting structure (1) and propagated in the first portion (40.1). The emitting structure (1) is made using the III-V technology or II-VI technology, and the guide structure (40) is made using the silicon technology.

Abstract: A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Abstract: The light-emitting device includes a base substrate and preferably three light-emitting diodes respectively associated with three primary colors and emitting a part of their signal in the direction of the base substrate. The device includes three chromatic photodetectors formed in the base substrate constituting a semiconducting substrate, and each arranged under an associated light-emitting diode. Each chromatic photodetector includes superposed first, second and third layers. The first layer and third layer have a first type of conductivity and the second layer has a second type of conductivity. The device includes a control component connected to the chromatic photodetectors and to the light-emitting diodes to control the global color of the light emitted by the device.