Patents by Inventor Alexis Gauthier
Alexis Gauthier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063290Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.Type: ApplicationFiled: October 26, 2023Publication date: February 22, 2024Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Alexis GAUTHIER, Pascal CHEVALIER
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Patent number: 11837647Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.Type: GrantFiled: March 3, 2022Date of Patent: December 5, 2023Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Alexis Gauthier, Pascal Chevalier
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Patent number: 11817353Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.Type: GrantFiled: January 4, 2022Date of Patent: November 14, 2023Assignee: STMicroelectronics (Crolles 2) SASInventors: Pascal Chevalier, Alexis Gauthier, Gregory Avenier
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Patent number: 11804521Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.Type: GrantFiled: January 26, 2022Date of Patent: October 31, 2023Assignee: STMicroelectronics (Crolles 2) SASInventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier
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Patent number: 11798937Abstract: A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.Type: GrantFiled: October 18, 2021Date of Patent: October 24, 2023Assignee: STMicroelectronics (Crolles 2) SASInventors: Edoardo Brezza, Alexis Gauthier
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Patent number: 11776995Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.Type: GrantFiled: May 2, 2022Date of Patent: October 3, 2023Assignee: STMicroelectronics (Crolles 2) SASInventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier
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Patent number: 11710776Abstract: A bipolar transistor includes a stack of an emitter, a base, and a collector. The base is structured to have a comb shape including fingers oriented in a plane orthogonal to a stacking direction of the stack.Type: GrantFiled: August 13, 2021Date of Patent: July 25, 2023Assignee: STMicroelectronics (Crolles 2) SASInventors: Alexis Gauthier, Edoardo Brezza, Pascal Chevalier
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Publication number: 20230128033Abstract: According to one aspect provision is made of a method for ion implantation in a semiconductor wafer placed in an implantation chamber under vacuum, the semiconductor wafer having an integrated circuit area and a peripheral area around this integrated circuit area, the ion implantation allowing to apply a doping in regions, called implantation regions, of the integrated circuit area, the method comprising: forming a photosensitive resin coating serving as a mask on the semiconductor wafer, then forming openings in the photosensitive resin coating at said implantation regions of the integrated circuit area and at least at one region of the peripheral area, then implanting ions in the semiconductor wafer.Type: ApplicationFiled: October 12, 2022Publication date: April 27, 2023Applicant: STMicroelectronics (Crolles 2) SASInventors: Julien BORREL, Alexis GAUTHIER, Fanny HILARIO, Ludovic BERTHIER, Paul DUMAS, Edoardo BREZZA
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Patent number: 11621324Abstract: A bipolar junction transistor includes an extrinsic collector region buried in a semiconductor substrate under an intrinsic collector region. Carbon-containing passivating regions are provided to delimit the intrinsic collector region. An insulating layer on the intrinsic collector region includes an opening within which an extrinsic base region is provided. A semiconductor layer overlies the insulating layer, is in contact with the extrinsic base region, and includes an opening with insulated sidewalls. The collector region of the transistor is provided between the insulated sidewalls.Type: GrantFiled: May 18, 2021Date of Patent: April 4, 2023Assignee: STMicroelectronics (Crolles 2) SASInventors: Alexis Gauthier, Julien Borrel
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Patent number: 11417756Abstract: A method of making a bipolar transistor includes forming a stack of a first, second, third and fourth insulating layers on a substrate. An opening is formed in the stack to reach the substrate. An epitaxial process forms the collector of the transistor on the substrate and selectively etches an annular opening in the third layer. The intrinsic part of the base is then formed by epitaxy on the collector, with the intrinsic part being separated from the third layer by the annular opening. The junction between the collector and the intrinsic part of the base is surrounded by the second layer. The emitter is formed on the intrinsic part and the third layer is removed. A selective deposition of a semiconductor layer on the second layer and in direct contact with the intrinsic part forms the extrinsic part of the base.Type: GrantFiled: February 15, 2021Date of Patent: August 16, 2022Assignee: STMicroelectronics (Crolles 2) SASInventors: Edoardo Brezza, Alexis Gauthier, Fabien Deprat, Pascal Chevalier
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Publication number: 20220254879Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.Type: ApplicationFiled: May 2, 2022Publication date: August 11, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Alexis GAUTHIER, Pascal CHEVALIER, Gregory AVENIER
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Publication number: 20220254686Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.Type: ApplicationFiled: April 25, 2022Publication date: August 11, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Gregory AVENIER, Alexis GAUTHIER, Pascal CHEVALIER
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Publication number: 20220190140Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.Type: ApplicationFiled: March 3, 2022Publication date: June 16, 2022Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Alexis GAUTHIER, Pascal CHEVALIER
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Patent number: 11355581Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.Type: GrantFiled: August 17, 2020Date of Patent: June 7, 2022Assignee: STMicroelectronics (Crolles 2) SASInventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier
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Patent number: 11348834Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.Type: GrantFiled: June 23, 2020Date of Patent: May 31, 2022Assignee: STMicroelectronics (Crolles 2) SASInventors: Gregory Avenier, Alexis Gauthier, Pascal Chevalier
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Publication number: 20220149151Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.Type: ApplicationFiled: January 26, 2022Publication date: May 12, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Alexis GAUTHIER, Pascal CHEVALIER, Gregory AVENIER
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Publication number: 20220130728Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.Type: ApplicationFiled: January 4, 2022Publication date: April 28, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Pascal CHEVALIER, Alexis GAUTHIER, Gregory AVENIER
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Publication number: 20220122969Abstract: A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.Type: ApplicationFiled: October 18, 2021Publication date: April 21, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Edoardo BREZZA, Alexis GAUTHIER
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Patent number: 11296205Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.Type: GrantFiled: October 2, 2019Date of Patent: April 5, 2022Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Alexis Gauthier, Pascal Chevalier
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Patent number: 11276752Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.Type: GrantFiled: August 17, 2020Date of Patent: March 15, 2022Assignee: STMicroelectronics (Crolles 2) SASInventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier