Patents by Inventor Alfred Lell
Alfred Lell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8964808Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: GrantFiled: December 17, 2008Date of Patent: February 24, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20140362883Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 ?m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.Type: ApplicationFiled: April 29, 2014Publication date: December 11, 2014Inventors: Alfred Lell, Uwe Strauss, Soenke Tautz, Clemens Vierheilig
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Publication number: 20140341247Abstract: A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 ?m.Type: ApplicationFiled: March 11, 2013Publication date: November 20, 2014Inventors: Uwe Strauß, Sönke Tautz, Alfred Lell, Clemens Vierheilig
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Patent number: 8867582Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 ?m is arranged between the laser diode chip and the mounting part.Type: GrantFiled: April 4, 2013Date of Patent: October 21, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Uwe Strauss, Soenke Tautz, Alfred Lell, Karsten Auen, Clemens Vierheilig
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Patent number: 8858030Abstract: A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface, and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.Type: GrantFiled: April 6, 2011Date of Patent: October 14, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Avramescu, Alfred Lell, Soenke Tautz, Andreas Breidenassel
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Publication number: 20140217425Abstract: A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface.Type: ApplicationFiled: July 30, 2012Publication date: August 7, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GmbHInventors: Fabian Kopp, Alfred Lell, Christoph Eichler, Clemens Vierheilig, Sönke Tautz
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Publication number: 20140146842Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.Type: ApplicationFiled: November 27, 2013Publication date: May 29, 2014Inventors: Adrian Stefan Avramescu, Clemens Vierheilig, Christoph Eichler, Alfred Lell, Jens Mueller
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Patent number: 8737445Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 ?m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.Type: GrantFiled: April 4, 2013Date of Patent: May 27, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Soenke Tautz, Uwe Strauss, Clemens Vierheilig
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Publication number: 20140133504Abstract: A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.Type: ApplicationFiled: September 19, 2013Publication date: May 15, 2014Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler
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Publication number: 20140064311Abstract: A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.Type: ApplicationFiled: April 18, 2012Publication date: March 6, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Dimitri Dini, Alfred Lell
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Patent number: 8619833Abstract: A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 ?m.Type: GrantFiled: June 28, 2010Date of Patent: December 31, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Stefanie Rammelsberger
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Patent number: 8564185Abstract: A semiconductor light source is provided, the semiconductor light source having a primary radiation source (1) which, when the semiconductor light source is operated, emits electromagnetic primary radiation (5) in a first wavelength range, and having a luminescence conversion module (2) into which primary radiation (5) emitted by the primary radiation source (1) is fed. The luminescence conversion module (2) contains a luminescence conversion element (6) which, by means of a luminescent material, absorbs primary radiation (5) from the first wavelength range and emits electromagnetic secondary radiation (15) in a second wavelength range. The luminescence conversion element (6) is arranged on a heat sink (3) at a distance from the primary radiation source (1).Type: GrantFiled: September 11, 2008Date of Patent: October 22, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Hubert Ott, Alfred Lell, Sönke Tautz, Uwe Strauss, Frank Baumann, Kirstin Petersen
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Publication number: 20130272333Abstract: A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 ?m.Type: ApplicationFiled: April 9, 2013Publication date: October 17, 2013Inventors: Uwe Strauss, Soenke Tautz, Alfred Lell, Clemens Vierheilig
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Publication number: 20130230068Abstract: An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.Type: ApplicationFiled: September 7, 2011Publication date: September 5, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Nelz, Christian Rumbolz, Stefan Hartauer
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Patent number: 8475025Abstract: One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength.Type: GrantFiled: December 14, 2007Date of Patent: July 2, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Hubert Ott, Alfred Lell, Uwe Strauss, Volker Haerle, Norbert Stath
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Patent number: 8471240Abstract: An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.Type: GrantFiled: January 19, 2011Date of Patent: June 25, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Christoph Eichler, Alfred Lell, Andreas Miler, Marc Schillgalies
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Publication number: 20130148683Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: December 17, 2008Publication date: June 13, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20130107534Abstract: A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.Type: ApplicationFiled: April 6, 2011Publication date: May 2, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Adrian Avramescu, Alfred Lell, Soenke Tautz, Andreas Breidenassel
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Patent number: 8369370Abstract: A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.Type: GrantFiled: December 17, 2008Date of Patent: February 5, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20130016752Abstract: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.Type: ApplicationFiled: January 31, 2011Publication date: January 17, 2013Inventors: Alfred Lell, Martin Straussburg