Abstract: An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.

Abstract: The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.

Abstract: A laser diode assembly comprising a semiconductor substrate; (2; 101; 201; 301; 72), at least two laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99), each having one active zone; (6, 12; 105, 109, 113; 207, 213; 307, 311; 76, 82, 88), and at least one translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85), wherein the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) and the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85) are monolithically deposited on the semiconductor substrate (2; 101; 201; 301; 72), wherein the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) are electrically connected by the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85), and wherein laser diodes (26a, 26b, 27a, 27b; 36a, 36b, 37a, 37b; 46a, 46b, 47a, 47b; 66a, 66b, 67a, 67b; 94a, 94b, 95a, 95b, 96a, 96b) that are formed from the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) form a two-dimensional structu

Abstract: A light-emitting device, comprising: a radiation source (5), which emits radiation having a first wavelength, an optical waveguide (10), into which the radiation emitted by the radiation source is coupled, and a converter material (15), which converts the radiation transported through the optical waveguide (10) into light (20) having a second, longer wavelength. A light-emitting device of this type can have an improved light conversion efficiency.

Abstract: A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 ?m.

Abstract: In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 ?m.

Abstract: An arrangement comprising a fiber-optic waveguide (10) and a detection device (25), wherein the fiber-optic waveguide (10) comprises a core region (10E) and a cladding region (10C) surrounding the core region (10E), wherein the core region has a higher refractive index than the cladding region, and wherein the detection device (25) can detect damage to the fiber-optic waveguide (10).

Abstract: The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element. The layers have predefined layer thicknesses, such that the layer thicknesses of layers of the first type and of the layers of the second type increase from layer to layer with increasing distance from an active layer. An increasing layer thickness within the layers of the first and the second type is suitable for adapting the electrical, optical and epitaxial properties of the superlattice to given requirements in the best possible manner.

Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

Abstract: An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.

Abstract: The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.

Abstract: A semiconductor light source is provided, the semiconductor light source having a primary radiation source (1) which, when the semiconductor light source is operated, emits electromagnetic primary radiation (5) in a first wavelength range, and having a luminescence conversion module (2) into which primary radiation (5) emitted by the primary radiation source (1) is fed. The luminescence conversion module (2) contains a luminescence conversion element (6) which, by means of a luminescent material, absorbs primary radiation (5) from the first wavelength range and emits electromagnetic secondary radiation (15) in a second wavelength range. The luminescence conversion element (6) is arranged on a heat sink (3) at a distance from the primary radiation source (1).

Abstract: The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.

Abstract: The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9a, 9b) of the superlattice (9) contain dopants in predetermined concentrations, with regard to which the concentrations of the dopants are different at least two layers of a same composition in the superlattice (9), the concentration of the dopants is graded within at least one layer (9a, 9b) of the superlattice (9), and the superlattice (9) comprises layers that are doped with different dopants or comprise at least one layer (9a, 9b) that is undoped. The electrical and optical properties of the superlattice (9) can be adapted to given requirements in the best possible manner in this way.

Abstract: An arrangement comprising a fiber-optic waveguide (10) and a detection device (25), wherein the fiber-optic waveguide (10) comprises a core region (10E) and a cladding region (10C) surrounding the core region (10E), wherein the core region has a higher refractive index than the cladding region, and wherein the detection device (25) can detect damage to the fiber-optic waveguide (10).

Abstract: One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength.

Abstract: A light-emitting device, comprising: a radiation source (5), which emits radiation having a first wavelength, an optical waveguide (10), into which the radiation emitted by the radiation source is coupled, and a converter material (15), which converts the radiation transported through the optical waveguide (10) into light (20) having a second, longer wavelength. A light-emitting device of this type can have an improved light conversion efficiency.

Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

Abstract: An optical arrangement comprising at least one first light-emitting element (LE1) and at least one second light-emitting element (LE2), and at least one light addition device (1) arranged in such a way that the light from the first and the second light-emitting element (LE1, LE2) are added to form a light beam.

Abstract: A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.