Abstract: Organometal-containing polymers having side chains of the formula I ##STR1## in which, for example, M is Si, X is O, R.sup.1 and R.sup.2 are hydrogen and R.sup.4 to R.sup.6 are each methyl and which have an average molecular weight between 1,000 and 1,000,000, are suitable for the preparation of dry-developable photoresists, such as are required for the generation of structured images, in particular in microelectronics.

Abstract: Organometal-containing styrene derivatives of the formula I ##STR1## in which, for example, M is Si, X is 0, R.sup.1 and R.sup.2 are hydrogen, R.sup.4 to R.sup.6 are each methyl, a is zero and R.sup.7 is hydrogen or methyl, and organometal-containing compounds of the formula VII ##STR2## in which M and R.sup.1 to R.sup.6 are, for example, as defined above and Y is, for example, 4-nitrophenoxy, are valuable starting materials for the preparation of organometal-containing polymers. The polymers are suitable for the preparation of photoresists which can be developed under dry conditions, such as are required in the production of structured images, particularly in microelectronics.

Abstract: There are disclosed novel substituted o-phthalaldehydes of formula I ##STR1## wherein at least one of the substituents R.sub.1, R.sub.2, R.sub.3, R.sub.4 is Q(alkyl).sub.3, --CH.sub.2 --Q(alkyl).sub.3, --O--Q(alkyl).sub.3, --Q(aryl).sub.3 or --Q(alkylenearyl).sub.3, wherein Q is Si, Sn or Ge, the alkyl moieties contain 1 to 12 carbon atoms, the aryl groups contain 6 or 12 ring carbon atoms and the alkylene radicals contain 1 to 4 carbon atoms, and each of the remaining substituents R.sub.1 to R.sub.4 is a hydrogen or halogen atom or a cyano, nitro, carboxyl or hydroxyl group, a C.sub.1 -C.sub.4 alkoxy, C.sub.1 -C.sub.4 alkylthio or an alkoxycarbonyl group containing 1 to 4 carbon atoms in the alkoxy moiety.The novel o-phthalaldehydes can be polymerized to give polymers that can be used as photoresists.

Abstract: Homopolymers or copolymers of organometallic, end-capped polyphthalaldehydes containing the repeating unit of formula I ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are each independently of the other hydrogen, halogen, cyano, nitro, carboxyl, hydroxyl, C.sub.1 -C.sub.4 alkoxy, C.sub.1 -C.sub.4 alkylthio or C.sub.1 -C.sub.4 alkoxycarbonyl, and at least one of the substituents R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are a group --Q(R.sup.5).sub.3 or --Q(R.sup.6).sub.3, where Q is Si, Sn, Ge, CH.sub.2 --Si or O--Si, R.sup.5 is C.sub.1 -C.sub.12 alkyl and R.sup.6 is C.sub.6 -C.sub.10 aryl, are suitable for producing dry-developed, plasma-resistant photoresists required for the production of structured images, especially for microelectronics.