Patents by Inventor ALFRED ZHANG

ALFRED ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200024880
    Abstract: A refrigeration device has a first door with an opening and a second door for closing the opening in the first door. A first hinge member has a first connection portion fixed on a main body of the refrigeration device and a first hinged portion connected to the first door. A second hinge member has a second connection portion fixed on the first door and a second hinged portion connected to the second door. The second hinge member includes a columnar portion that is hinged to the first hinged portion. One of the columnar portion and the first hinged portion has a first shaft hole, and the other one has a first hinge shaft that extends into the first shaft hole. The novel device prevents a door body of the refrigeration device from being damaged at a hinged position and the reliability of the refrigeration device is improved.
    Type: Application
    Filed: July 11, 2019
    Publication date: January 23, 2020
    Inventors: QINCHAO LIU, PING LV, ALFRED RAAB, CHUAN ZHANG
  • Publication number: 20190379090
    Abstract: During the charging of lithium-ion batteries, comprising graphite anode particles, the goal is to intercalate lithium into the anode materials as LiC6. But it is possible to conduct the charging process at a rate that lithium is undesirably plated, undetected, as lithium metal on the particles of graphite. During an open-circuit period of battery operation, immediately following such a charging period, the presence of lithium plating can be detected, using a computer-based monitoring system, by continually measuring the cell potential (Vcell) over a brief period of open-circuit time, fitting the open-circuit voltage data to a best cubic polynomial fit, and then determining dVcell/dt (mV/s) from the polynomial fit over a like period of time. It is found that the presence of a maximum or a minimum in the derivative curve (a local minimum) reliably correlates with plated lithium on the graphite particles of the anode.
    Type: Application
    Filed: June 12, 2018
    Publication date: December 12, 2019
    Inventors: Mark W. Verbrugge, Charles W. Wampler, Daniel R. Baker, Raghunathan K, Brian J. Koch, Alfred Zhang
  • Publication number: 20140175580
    Abstract: A magnetoresistive memory device and a fabrication method are provided. A first dielectric layer disposed on a semiconductor substrate can include a groove formed therein. A cobalt metal layer can be formed over a bottom surface and a sidewall surface of the groove. A first metal layer can be formed over the cobalt metal layer. The first metal layer can fill the groove and be used as a first programming line of the magnetoresistive memory device. A second dielectric layer can be formed over the first dielectric layer and over the first metal layer. A magnetic tunnel junction can be formed over the second dielectric layer. The magnetic tunnel junction can be positioned corresponding to a position of the first metal layer. The magnetic tunnel junction can include an insulating layer sandwiched between a lower magnetic material layer and an upper magnetic material layer.
    Type: Application
    Filed: October 17, 2013
    Publication date: June 26, 2014
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: WENFU CHEN, PAUL HE, ALFRED ZHANG, SEN SHI