Abstract: A method of making a reference electrode assembly for an electrochemical cell according to various aspects of the present disclosure includes providing a subassembly including a separator layer and a current collector layer coupled to the separator layer. The method further includes providing an electrode ink including an electroactive material, a binder, and a solvent. The method further includes creating a reference electrode precursor by applying an electroactive precursor layer to the current collector layer. The electroactive precursor layer covers greater than or equal to about 90% of a superficial surface area of a surface of the current collector layer. The electroactive precursor layer includes the electrode ink. The method further includes creating the reference electrode assembly by drying the electroactive precursor layer to remove at least a portion of the solvent, thereby forming an electroactive layer. The electroactive layer is solid and porous.

Abstract: During the charging of lithium-ion batteries, comprising graphite anode particles, the goal is to intercalate lithium into the anode materials as LiC6. But it is possible to conduct the charging process at a rate that lithium is undesirably plated, undetected, as lithium metal on the particles of graphite. During an open-circuit period of battery operation, immediately following such a charging period, the presence of lithium plating can be detected, using a computer-based monitoring system, by continually measuring the cell potential (Vcell) over a brief period of open-circuit time, fitting the open-circuit voltage data to a best cubic polynomial fit, and then determining dVcell/dt (mV/s) from the polynomial fit over a like period of time. It is found that the presence of a maximum or a minimum in the derivative curve (a local minimum) reliably correlates with plated lithium on the graphite particles of the anode.

Abstract: A magnetoresistive memory device and a fabrication method are provided. A first dielectric layer disposed on a semiconductor substrate can include a groove formed therein. A cobalt metal layer can be formed over a bottom surface and a sidewall surface of the groove. A first metal layer can be formed over the cobalt metal layer. The first metal layer can fill the groove and be used as a first programming line of the magnetoresistive memory device. A second dielectric layer can be formed over the first dielectric layer and over the first metal layer. A magnetic tunnel junction can be formed over the second dielectric layer. The magnetic tunnel junction can be positioned corresponding to a position of the first metal layer. The magnetic tunnel junction can include an insulating layer sandwiched between a lower magnetic material layer and an upper magnetic material layer.