Abstract: A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a self assembled monolayer of dopant precursor; hydrolyzing the self assembled monolayer of the dopant precursor with water vapor to form pendant hydroxyl groups on the dopant precursor; capping the self assembled monolayer with an oxide layer; and annealing the silicon layer at a temperature effective to diffuse dopant atoms from the dopant precursor into the silicon layer. Additional monolayers can be formed in a similar manner, thereby providing controlled layer-by-layer vapor phase deposition of the dopant precursor compounds for controlled doping of silicon.

Abstract: A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric.

Abstract: A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric.

Abstract: A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

Abstract: A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: wherein each of R1, R2, R3, and R4 comprises one of hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.

Abstract: An organic semiconductor device includes a thin film comprising a polycyclic aromatic compound in a polymer matrix, the thin film including a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film.

Abstract: A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: wherein in the dihydrotetraazapentacene chemical structure, each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group.

Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.

Abstract: A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface. The dopant compound only adheres on the hydrophilic regions. After deposition, the substrate is coated with a very thin layer of oxide to cap the compounds, and the substrate is annealed at high temperatures to diffuse the dopant atoms into the silicon and to activate the dopant. In one embodiment, the method comprises providing a semiconductor substrate including an oxide surface, patterning said surface into hydrophobic and hydrophilic regions, depositing a compound including a dopant on the substrate, wherein the dopant adheres to the hydrophilic region, and diffusing the dopant into the oxide surface of the substrate.

Abstract: A semiconductor device includes a bonding surface, a semiconducting nanostructure including one of a nanowire and a nanocrystal, which is formed on the bonding surface, and a source electrode and a drain electrode which are formed on the nanostructure such that the nanostructure is electrically connected to the source and drain electrodes.

Abstract: A composite material includes a carbon nanotube, and plural pentacene molecules bonded to the carbon nanotube. A method of forming the composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.

Abstract: A polymeric material includes a pendant polycyclic aromatic compound precursor.

Abstract: Graphene transistor devices and methods of their fabrication are disclosed. One such graphene transistor device includes source and drain electrodes and a gate structure including a dielectric sidewall spacer that is disposed between the source and drain electrodes. The device further includes a graphene layer that is adjacent to at least one of the source and drain electrodes, where an interface between the source/drain electrode(s) and the graphene layer maintains a consistent degree of electrical conductivity throughout the interface.

Abstract: Graphene transistor devices and methods of their fabrication are disclosed. In accordance with one method, a resist is deposited to pattern a gate structure area over a graphene channel on a substrate. In addition, gate dielectric material and gate electrode material are deposited over the graphene channel and the resist. Further, the resist and the electrode and dielectric materials that are disposed above the resist are lifted-off to form a gate structure including a gate electrode and a gate dielectric spacer and to expose portions of the graphene channel that are adjacent to the gate structure. Additionally, source and drain electrodes are formed over the exposed portions of the graphene channel.

Abstract: A method and system are disclosed for doping a semiconductor substrate. In one embodiment, the method comprises forming a carbon free layer of phosphoric acid on a semiconductor substrate, and diffusing phosphorous from the layer of phosphoric acid in the substrate to form an activated phosphorous dopant therein. In an embodiment, the semiconductor substrate is immersed in a solution of a phosphorous compound to form a layer of the phosphorous compound on the substrate, and this layer of phosphorous is processed to form the layer of phosphoric acid. In an embodiment, this processing may include hydrolyzing the layer of the phosphorous compound to form the layer of phosphoric acid. In one embodiment, an oxide cap layer is formed on the phosphoric acid layer to form a capped substrate. The capped substrate may be annealed to diffuse the phosphorous in the substrate and to form the activated dopant.

Abstract: A method of rendering a substrate catalytic to electroless metal deposition comprising the steps of: (a) depositing a ligating chemical agent on the substrate, which is capable of both binding to the substrate and ligating to an electroless plating catalyst; and (b) ligating the electroless plating catalyst to the ligating chemical agent, wherein the ligating chemical agent has the chemical structure:

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract: A nanopore capture system may include a material configured to pass through a nanopore device in a controlled manner based upon its interaction with the nanopore device. The system may also include a capture mechanism connected to one end of the material. The capture mechanism may be configured to catch a particular type of molecule while ignoring other types of molecules. The system may also include a controller to manipulate and/or detect the particular type of molecule.

Abstract: A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.

Abstract: A technique for a nanodevice is provided. The nanodevice includes a fluidic cell, and a membrane dividing the fluidic cell. A nanopore is formed through the membrane, and the nanopore is coated with an organic compound. A first part of the organic compound binds to a surface of the nanopore and a second part of the organic compound is exposed freely inside of the nanopore. The second part of the organic compound is configured to be switched among a first neutral hydrophilic end group, a second negatively charged hydrophilic end group, and a third neutral hydrophobic end group based on a switching mechanism.