Abstract: A technique for a nanodevice is provided. The nanodevice includes a fluidic cell, and a membrane dividing the fluidic cell. A nanopore is formed through the membrane, and the nanopore is coated with an organic compound. A first part of the organic compound binds to a surface of the nanopore and a second part of the organic compound is exposed freely inside of the nanopore. The second part of the organic compound is configured to be switched among a first neutral hydrophilic end group, a second negatively charged hydrophilic end group, and a third neutral hydrophobic end group based on a switching mechanism.

Abstract: A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface. The dopant compound only adheres on the hydrophilic regions. After deposition, the substrate is coated with a very thin layer of oxide to cap the compounds, and the substrate is annealed at high temperatures to diffuse the dopant atoms into the silicon and to activate the dopant. In one embodiment, the method comprises providing a semiconductor substrate including an oxide surface, patterning said surface into hydrophobic and hydrophilic regions, depositing a compound including a dopant on the substrate, wherein the dopant adheres to the hydrophilic region, and diffusing the dopant into the oxide surface of the substrate.

Abstract: A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.

Abstract: Methods for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.

Abstract: A method and system are disclosed for doping a semiconductor substrate. In one embodiment, the method comprises forming a carbon free layer of phosphoric acid on a semiconductor substrate, and diffusing phosphorous from the layer of phosphoric acid in the substrate to form an activated phosphorous dopant therein. In an embodiment, the semiconductor substrate is immersed in a solution of a phosphorous compound to form a layer of the phosphorous compound on the substrate, and this layer of phosphorous is processed to form the layer of phosphoric acid. In an embodiment, this processing may include hydrolyzing the layer of the phosphorous compound to form the layer of phosphoric acid. In one embodiment, an oxide cap layer is formed on the phosphoric acid layer to form a capped substrate. The capped substrate may be annealed to diffuse the phosphorous in the substrate and to form the activated dopant.

Abstract: Disclosed is a method which includes forming a bottom metallic electrode on an insulating substrate; forming a semiconductor junction on the metallic electrode; forming a transparent conducting overlayer in contact with the semiconductor junction; and forming a metallic layer in contact with the transparent conducting overlayer, wherein the metallic layer is formed by a plating process. The plating process may be an electroplating process or an electroless plating process. The transparent conducting overlayer may be carbon nanotubes or graphene. The semiconductor junction may be a p-i-n semiconductor junction, a p-n semiconductor junction, an n-p semiconductor junction or an n-i-p semiconductor junction.

Abstract: A process comprises combining a Ce (IV) salt dissolved in a solvent comprising water with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid, Ce (IV) ammonium salt of a sulfur oxide acid, Ce (IV) salt of a lower alkyl organo sulfur acid, or Ce (IV) salt of a lower alkane organo sulfur acid. In one embodiment the Ce (IV) salt is selected from Ce (IV) ammonium nitrate, Ce (IV) ammonium sulfate, Ce (IV) lower alkyllsulfonate, or Ce (IV) trifluoro lower alkanesulfonate. A product is produced by this process. An article of manufacture comprises this product on a substrate.

Abstract: A process comprises combining a Ce (IV) salt with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid and is dissolved in a solvent comprising water. The process is conducted under conditions to substantially oxidize the carbon material to produce an oxidized material that is substantially non-conducting. After the oxidation, the Ce (IV) is substantially removed from the oxidized material. This produces a product made by the process. An article of manufacture comprises the product on a substrate. The oxidized material can be formed as a pattern on the substrate. In another embodiment the substrate comprises an electronic device with the oxidized material patterning non-conductive areas separate from conductive areas of the non-oxidized carbon material, where the conductive areas are operatively associated with the device.

Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.

Abstract: A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: wherein in the dihydrotetraazapentacene chemical structure, each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group.

Abstract: An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract: A method and an apparatus for doping a graphene and nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of a graphene and nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.

Abstract: A method and an apparatus for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device.

Abstract: A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.

Abstract: A dielectric material layer is formed on a front surface of a photovoltaic device. A patterned PMMA-type-material-including layer is formed on the dielectric material layer, and the pattern is transferred into the top portion of the photovoltaic device to form trenches in which contact structures can be formed. In one embodiment, a blanket PMMA-type-material-including layer is deposited on the dielectric material layer, and is patterned by laser ablation that removes ablated portions of PMMA-type-material. The PMMA-type-material-including layer may also include a dye to enhance absorption of the laser beam. In another embodiment, a blanket PMMA-type-material-including layer may be deposited on the dielectric material layer and mechanically patterned to form channels therein. In yet another embodiment, a patterned PMMA-type-material-including layer is stamped on top of the dielectric material layer.

Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.

Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

Abstract: A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.

Abstract: A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.