Patents by Inventor Ali Afzali Ardakani

Ali Afzali Ardakani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hybrid high electron mobility transistor and active matrix structure
    Patent number: 9504123
    Abstract: Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.
    Type: Grant
    Filed: November 1, 2015
    Date of Patent: November 22, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Bahman Hekmatshoartabari, Devendra K. Sadana, Davood Shahrjerdi
  • HYBRID HIGH ELECTRON MOBILITY TRANSISTOR AND ACTIVE MATRIX STRUCTURE
    Publication number: 20160315101
    Abstract: Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.
    Type: Application
    Filed: April 27, 2015
    Publication date: October 27, 2016
    Inventors: Ali Afzali-Ardakani, Bahman Hekmatshoartabari, Devendra K. Sadana, Davood Shahrjerdi
  • HYBRID HIGH ELECTRON MOBILITY TRANSISTOR AND ACTIVE MATRIX STRUCTURE
    Publication number: 20160316539
    Abstract: Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.
    Type: Application
    Filed: November 1, 2015
    Publication date: October 27, 2016
    Inventors: Ali Afzali-Ardakani, Bahman Hekmatshoartabari, Devendra K. Sadana, Davood Shahrjerdi
  • Ambipolar synaptic devices
    Patent number: 9472641
    Abstract: Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.
    Type: Grant
    Filed: April 11, 2015
    Date of Patent: October 18, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Tze-Chiang Chen, Kailash Gopalakrishnan, Bahman Hekmatshoartabari
  • Nanopore capture system
    Patent number: 9453831
    Abstract: A nanopore capture system may include a material configured to pass through a nanopore device in a controlled manner based upon its interaction with the nanopore device. The system may also include a capture mechanism connected to one end of the material. The capture mechanism may be configured to catch a particular type of molecule while ignoring other types of molecules. The system may also include a controller to manipulate and/or detect the particular type of molecule.
    Type: Grant
    Filed: April 21, 2012
    Date of Patent: September 27, 2016
    Assignee: GlobalFoundries Inc.
    Inventors: Stanislav Polonsky, Ali Afzali-Ardakani, Hongbo Peng, Gustavo A. Stolovitzky, Ajay A. Royyuru, Mark N. Wegman
  • Radiation detector based on charged self-assembled monolayers on nanowire devices
    Patent number: 9435896
    Abstract: Radiation detectors having nanowires with charged, radiation-labile coatings configured to change the electrical properties of nanowires are provided. In one aspect, a radiation detection device is provided. The radiation detector device includes at least one nanowire having a radiation-labile coating with charged moieties on a surface thereof, wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: September 6, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ali Afzali-Ardakani, Jose M. Lobez Comeras
  • DNA sequencing using a suspended carbon nanotube
    Patent number: 9428805
    Abstract: A technique is provided for forming a nanodevice for sequencing. A bottom metal contact is disposed at a location in an insulator that is on a substrate. A nonconducting material is disposed on top of the bottom metal contact and the insulator. A carbon nanotube is disposed on top of the nonconducting material. Top metal contacts are disposed on top of the carbon nanotube at the location of the bottom metal contact, where the top metal contacts are formed at opposing ends of the carbon nanotube at the location. The carbon nanotube is suspended over the bottom metal contact at the location, by etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: August 30, 2016
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Ali Afzali-Ardakani, Aaron D. Franklin, George S. Tulevski
  • SEMICONDUCTOR DEVICE WITH PROGRAMMABLE RESPONSE
    Publication number: 20160197294
    Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.
    Type: Application
    Filed: February 16, 2016
    Publication date: July 7, 2016
    Inventors: Ali Afzali-Ardakani, Tze-chiang Chen, Kailash Gopalakrishnan, Bahman Hekmatshoartabari, Young H. Kwark
  • SEMI-CONDUCTOR DEVICE WITH PROGRAMMABLE RESPONSE
    Publication number: 20160197296
    Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.
    Type: Application
    Filed: February 15, 2016
    Publication date: July 7, 2016
    Inventors: Ali Afzali-Ardakani, Tze-chiang Chen, Kailash Gopalakrishnan, Bahman Hekmatshoartabari, Young H. Kwark
  • Gate tunable tunnel diode
    Patent number: 9385245
    Abstract: A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: July 5, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ali Afzali-Ardakani, Damon Farmer
  • Semi-conductor device with programmable response
    Patent number: 9379342
    Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: June 28, 2016
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Tze-chiang Chen, Kailash Gopalakrishnan, Bahman Hekmatshoartabari, Young H. Kwark
  • Semiconductor device with programmable response
    Patent number: 9379340
    Abstract: An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: June 28, 2016
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Tze-chiang Chen, Kailash Gopalakrishnan, Bahman Hekmatshoartabari, Young H. Kwark
  • DNA sequencing using a suspended carbon nanotube
    Patent number: 9371561
    Abstract: A technique is provided for forming a nanodevice for sequencing. A bottom metal contact is disposed at a location in an insulator that is on a substrate. A nonconducting material is disposed on top of the bottom metal contact and the insulator. A carbon nanotube is disposed on top of the nonconducting material. Top metal contacts are disposed on top of the carbon nanotube at the location of the bottom metal contact, where the top metal contacts are formed at opposing ends of the carbon nanotube at the location. The carbon nanotube is suspended over the bottom metal contact at the location, by etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: June 21, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ali Afzali-Ardakani, Aaron D. Franklin, George S. Tulevski
  • SELECTIVE PLACEMENT OF CARBON NANOTUBES VIA COULOMBIC ATTRACTION OF OPPOSITELY CHARGED CARBON NANOTUBES AND SELF-ASSEMBLED MONOLAYERS
    Publication number: 20160141501
    Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.
    Type: Application
    Filed: January 20, 2016
    Publication date: May 19, 2016
    Inventors: Ali Afzali-Ardakani, Hongsik Park, George S. Tulevski
  • SELECTIVE PLACEMENT OF CARBON NANOTUBES VIA COULOMBIC ATTRACTION OF OPPOSITELY CHARGED CARBON NANOTUBES AND SELF-ASSEMBLED MONOLAYERS
    Publication number: 20160137605
    Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.
    Type: Application
    Filed: January 20, 2016
    Publication date: May 19, 2016
    Inventors: Ali Afzali-Ardakani, Hongsik Park, George S. Tulevski
  • DNA SEQUENCING USING MULTIPLE METAL LAYER STRUCTURE WITH DIFFERENT ORGANIC COATINGS FORMING DIFFERENT TRANSIENT BONDINGS TO DNA
    Publication number: 20160139105
    Abstract: A nanodevice includes a reservoir filled with conductive fluid and a membrane separating the reservoir. A nanopore is formed through the membrane having electrode layers separated by insulating layers. A certain electrode layer has a first type of organic coating and a pair of electrode layers has a second type. The first type of organic coating forms a motion control transient bond to a molecule in the nanopore for motion control, and the second type forms first and second transient bonds to different bonding sites of a base of the molecule. When a voltage is applied to the pair of electrode layers a tunneling current is generated by the base in the nanopore, and the tunneling current travels via the first and second transient bonds formed to be measured as a current signature for distinguishing the base. The motion control transient bond is stronger than first and second transient bonds.
    Type: Application
    Filed: January 25, 2016
    Publication date: May 19, 2016
    Inventors: Ali Afzali-Ardakani, Stefan Harrer, Binquan Luan, Hongbo Peng, Stephen M. Rossnagel, Ajay K. Royyuru, Gustavo A. Stolovitzky, Philip S. Waggoner
  • Doped carbon nanotubes and transparent conducting films containing the same
    Patent number: 9324475
    Abstract: Transparent conducting electrodes include a doped single walled carbon nanotube film and methods for forming the doped single walled carbon nanotube (SWCNT) by solution processing. The method generally includes depositing single walled carbon nanotubes dispersed in a solvent and a surfactant onto a substrate to form a single walled carbon nanotube film thereon; removing all of the surfactant from the carbon nanotube film; and exposing the single walled carbon nanotube film to a single electron oxidant in a solution such that one electron is transferred from the single walled carbon nanotubes to each molecule of the single electron oxidant.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: April 26, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, EGYPT NANOTECHNOLOGY CENTER
    Inventors: Mostafa M. El-Ashry, Ali Afzali-Ardakani, Bhupesh Chandra, George S. Tulevski
  • Semi-conductor device with programmable response
    Patent number: 9318717
    Abstract: An apparatus with a programmable response includes a semi-conductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semi-conductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: April 19, 2016
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Tze-chiang Chen, Kailash Gopalakrishnan, Bahman Hekmatshoartabari, Young H. Kwark
  • Ambipolar synaptic devices
    Patent number: 9318572
    Abstract: Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.
    Type: Grant
    Filed: September 5, 2015
    Date of Patent: April 19, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Tze-Chiang Chen, Kailash Gopalakrishnan, Bahman Hekmatshoartabari
  • DNA sequencing using multiple metal layer structure with different organic coatings forming different transient bondings to DNA
    Patent number: 9285339
    Abstract: A nanodevice includes a reservoir filled with conductive fluid and a membrane separating the reservoir. A nanopore is formed through the membrane having electrode layers separated by insulating layers. A certain electrode layer has a first type of organic coating and a pair of electrode layers has a second type. The first type of organic coating forms a motion control transient bond to a molecule in the nanopore for motion control, and the second type forms first and second transient bonds to different bonding sites of a base of the molecule. When a voltage is applied to the pair of electrode layers a tunneling current is generated by the base in the nanopore, and the tunneling current travels via the first and second transient bonds formed to be measured as a current signature for distinguishing the base. The motion control transient bond is stronger than first and second transient bonds.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: March 15, 2016
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Stefan Harrer, Binquan Luan, Hongbo Peng, Stephen M. Rossnagel, Ajay K. Royyuru, Gustavo A. Stolovitzky, Philip S. Waggoner