Abstract: A value-voltage-distribution-intersection-based read disturb information determination system includes a storage device coupled to a global read temperature identification system. The storage device identifies a value voltage distribution intersection of first and second value voltage distributions for respective first and second values in a first row in a storage subsystem in the storage device, and determines a default value voltage reference shift between a default value voltage reference level associated with the first value and the second value and the value voltage distribution intersection. Based on the default value voltage reference shift, the storage device determines read disturb information for the first row in the storage subsystem in the storage device, and uses it to generate a read temperature for a second row in the storage subsystem in the storage device that it provides to the global read temperature identification system.

Abstract: A read-disturb-based read temperature determination system includes a storage device that is coupled to a read temperature adjustment subsystem. The storage device receives data from the read temperature adjustment subsystem, stores the data in a block in the storage device, identifies read disturb information for a row in the block at a plurality of different times, processes the read disturb information to generate a read temperature for the row, provides the read temperature in a local logical storage element read temperature map and, based on instructions from the read temperature adjustment subsystem, adjusts the read temperature provided in the local logical storage element read temperature map.

Abstract: A read-disturb-based read temperature information access system includes a read-disturb-based read temperature information management subsystem coupled to a plurality of storage devices that each include a read-disturb-based read temperature information Application Programming Interface (API). Each storage device generates and stores read-disturb-based read temperature information associated with that storage device, and when a read-disturb-based read temperature information command is received from the read-disturb-based read temperature information management subsystem that conforms to the read-disturb-based read temperature information API, the storage device receiving that read-disturb-based read temperature information command will execute it to perform at least one operation using the read-disturb-based read temperature information associated with and stored by that storage device.

Abstract: A read disturb information determination system includes a storage device coupled to a global read temperature identification system. The storage device reads, from a first row in a storage subsystem in the storage device, data stored in bits that were previously identified as being susceptible to read disturb effects, and error correction information associated with the data. The storage device uses the error correction information to identify a number of the bits that store portions of the data with errors and, based on the number of bits that store portions of the data with errors, determines read disturb information for the first row in the storage subsystem in the storage device. The storage device then uses the read disturb information to generate a read temperature for a second row in the storage subsystem in the storage device, and provides the read temperature to the global read temperature identification system.

Abstract: A value-voltage-distribution-intersection-based read disturb information determination system includes a storage device coupled to a global read temperature identification system. The storage device identifies a value voltage distribution intersection of first and second value voltage distributions for respective first and second values in a first row in a storage subsystem in the storage device, and determines a default value voltage reference shift between a default value voltage reference level associated with the first value and the second value and the value voltage distribution intersection. Based on the default value voltage reference shift, the storage device determines read disturb information for the first row in the storage subsystem in the storage device, and uses it to generate a read temperature for a second row in the storage subsystem in the storage device that it provides to the global read temperature identification system.

Abstract: A read-disturb-based read temperature adjustment system includes a read temperature adjustment subsystem that is coupled to the storage device. The read temperature adjustment subsystem identifies data that is stored in a block in the storage device and that is associated with a read temperature that is based on read disturb information associated with the block, determines a read temperature adjustment level for the data based on one or more data characteristics of the data and, based on the read temperature adjustment level, transmits a read temperature adjustment instruction to the storage device that causes the storage device to adjust the read temperature associated with the data.

Abstract: A read-disturb-based physical storage read temperature information identification system includes a global read temperature identification subsystem coupled to at least one storage device. Each at least one storage device reads valid data and obsolete data from at least one physical block in that storage device and, based on the reading of the valid data and the obsolete data, generates read disturb information associated with each row provided by the at least one physical block in that storage device. Each at least one storage devices then uses the read disturb information associated with each row provided by the at least one physical block in that storage device to generate a local logical storage element read temperature map for that storage device that it provides to the global read temperature identification subsystem.

Abstract: A read-disturb-based logical storage read temperature information maintenance system includes a global read temperature identification subsystem coupled to storage device(s). Each storage device identifies, from a physical block in that storage device, current read disturb information associated with a row provided by the physical block in that storage device, and maps the current read disturb information to logical storage element(s) included in a logical-to-physical storage element mapping for that storage device along with previous read disturb information that was previously mapped to those logical storage element(s) included in the logical-to-physical storage element mapping for that storage device.

Abstract: A storage error identification/reduction system includes a storage error identification/reduction subsystem coupled to a storage subsystem including a block. The storage error identification/reduction subsystem receives first data, and writes the first data to first storage locations in the block while writing storage error identification data to second storage location(s) in the block that each are located adjacent at least one of the first storage locations, with the storage error identification data including predetermined values that are written to predetermined locations included in the second storage location(s) in the block. The storage error identification/reduction subsystem then reads the storage error identification data from the second storage location(s) and, based on the predetermined values and predetermined locations of the storage error identification data, identifies errors resulting from the reading of the storage error identification data.

Abstract: A read-disturb-based logical storage read temperature identification system includes a global read temperature identification subsystem coupled to at least one storage device. Each at least one storage device identifies read disturb information associated with rows provided by the at least one physical block in that storage device from at least one physical block in that storage device, and maps the read disturb information associated with the rows provided by the at least one physical block in that storage device to one or more logical storage elements included in a logical-to-physical storage element mapping for that storage device to generate a local logical storage element read temperature map. Each at least one storage device may then provide its local logical storage element read temperature map to the global read temperature identification subsystem.

Abstract: A read-disturb-based read temperature time-based attenuation system includes a storage device that is coupled to a global read temperature identification subsystem. The storage device determines current read disturb information for data stored in a block in the storage device during a current time period, processes the current read disturb information and previous read disturb information that was determined during at least one previous time period that was prior to the current time period in order to generate a read temperature for the data stored in the block, generates a local logical storage element read temperature map that includes the read temperature, and provides the local logical storage element map to the global read temperature identification subsystem.

Abstract: A read disturb information isolation system includes a storage subsystem including a plurality of blocks that each include a plurality of rows, and a read disturb information isolation subsystem that is coupled to the storage system. For at least one of the plurality of blocks, the read disturb information isolation system retrieves data from at least a subset of rows in that block, identifies read disturb information for that data, performs at least one isolation operation on that read disturb information to generate isolated read disturb information, and provides that isolated read disturb information to a read temperature identification subsystem. The read temperature identification subsystem may then use the isolated read disturb information provided by the read disturb information isolation subsystem to generate a local logical storage element read temperature map.

Abstract: A read-disturb-based read temperature identification system includes storage device(s) that each determine read disturb information for each block in that storage device, use that read disturb information to identify a subset of rows in at least one block in that storage device that have a higher read temperature than the other rows in the at least one block in that storage device and, based on that identification, generate and store a local logical storage element read temperature map that identifies a subset of logical storage elements associated with that storage device that have a higher read temperature than the other logical storage elements associated with that storage device. A global read temperature identification subsystem coupled to the storage device(s) may then retrieve at least a portion of the local logical storage element read temperature map(s) and use them to generate a global logical storage element read temperature map.

Abstract: A storge device read-disturb-based block read temperature utilization system includes a storage device chassis housing a storage subsystem. A local read temperature utilization subsystem in the storage device chassis determines that data in a first block in the storage subsystem should be moved and, in response determines read disturb information for the first block and uses it to identify relative read temperatures for a plurality of rows in the first block in the storage subsystem. The local read temperature utilization system then moves the data from the first block in the storage subsystem to at least one second block in the storage subsystem based on the relative read temperatures identified for the plurality of rows in the first block in the storage subsystem.

Abstract: A read-disturb-based read temperature information persistence system includes a storage device coupled to a host subsystem. The storage device receives a first instruction from the host subsystem to write first data to the storage device, writes the first data to a first block in the storage device, and determines first read temperature(s) for the first data based on first read disturb information associated with the first block in the storage device. When a second instruction is received from the host subsystem to write second data to the storage device that is an updated version of the first data, the storage device identifies the first read temperature(s) determined for the first data in the first block in the storage device, and writes the second data and a first read temperature indication of the at least one first read temperature to a second block in the storage device.

Abstract: A read-disturb-based read temperature information utilization system includes a read-disturb-based read temperature information utilization subsystem coupled to a storage subsystem including storage devices that each generate local read-disturb-based read temperature information associated with that storage device. The read-disturb-based read temperature information utilization subsystem retrieves at least some of the local read-disturb-based read temperature information generated by each storage device and a number of reads associated with that storage device and, based on the number of reads associated with each of the storage devices, normalizes the at least some of the local read-disturb-based read temperature information retrieved from each of the storage devices to generate normalized local read-disturb-based read temperature information for each of the storage devices.

Abstract: A storage device read-disturb-based read temperature map utilization system includes a storage device chassis housing a storage subsystem. A local read temperature utilization subsystem in the storage device chassis determines read disturb information for a plurality of blocks in the storage subsystem, uses it to identify a subset of rows in block(s) in the storage subsystem that have a relatively higher read temperature and, based on those read temperature identifications, generates a local logical storage element read temperature map that identifies a subset of logical storage elements associated with the storage subsystem that have a relatively higher read temperature. The local read temperature utilization subsystem then moves data from first block(s) in the storage subsystem to second block(s) in the storage subsystem based on relative read temperatures identified in the local logical storage element read temperature map.

Abstract: Techniques described herein relate to a method for performing computational offloads for composed information handling systems. The method includes obtaining, by a system control processor associated with a composed information handling system, a computational offload request associated with a dataset from an application executing on an at least one compute resource set; in response to obtaining the computational offload request: identifying a dataset location associated with the dataset in the composed information handling system; identifying resources of the composed information handling system capable of performing the computational offload request; selecting a resource of the resources to perform the computational offload; and initiating performance of the computational offload request on the selected resource.

Abstract: A method and a computer readable medium comprising instructions for upgrading a firmware of a peripheral device connected to a host device via a Peripheral Component Interconnect Express (PCIe) bus from the operating system (OS) of the host device is disclosed. In one embodiment, the method and computer readable medium instructions includes halting host device access to the peripheral device after detecting the peripheral device has completed a shutdown sequence, and resetting the peripheral device after a predetermined time period after completion of the shutdown sequence. The method and computer readable medium instructions further includes initializing the firmware stored in a persistent storage location of the peripheral device, and re-establishing a connection between the peripheral device and the host device. In one embodiment, the predetermined time period is greater than a time it takes for the host device to detect the peripheral device has completed the shutdown sequence.

Abstract: An amplification-based read disturb information determination system includes a storage device coupled to a global read temperature identification system. The storage device amplifies data errors in a first row in its storage subsystem by shifting a first value voltage reference level associated with the first row to provide a second value voltage reference level, reads data stored in bits provided in the first row and error correction information associated with the data, and uses the error correction information to identify a number of the bits that store portions of the data with errors. For the first row and based on the number of bits that store portions of the data with errors, the storage device determines read disturb information and uses it to generate a read temperature for a second row in its storage subsystem that it provides to the global read temperature identification system.