Abstract: Solar energy collection and storage systems and processes of using such systems. Non-direct solar energy collection and storage systems can generate electricity from solar radiation using a solar thermoelectric generator and at the same time capture solar thermal energy in a working fluid. The working fluid can then transfer the heat to a thermal storage medium where the heat can be retrieved on demand to generate electricity and heat a fluid. Direct solar energy collection and storage systems can store solar thermal energy in a thermal storage medium directly from solar radiation and the heat from the thermal storage medium can be used on demand to generate electricity and heat a fluid.

Abstract: Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon—the combination reduces the thermal conductivity below the alloy limit.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

Abstract: Solar energy collection and storage systems and processes of using such systems. Non-direct solar energy collection and storage systems can generate electricity from solar radiation using a solar thermoelectric generator and at the same time capture solar thermal energy in a working fluid. The working fluid can then transfer the heat to a thermal storage medium where the heat can be retrieved on demand to generate electricity and heat a fluid. Direct solar energy collection and storage systems can store solar thermal energy in a thermal storage medium directly from solar radiation and the heat from the thermal storage medium can be used on demand to generate electricity and heat a fluid.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: The temperature distribution associated with a design of an integrated circuit is calculated by convoluting a surface power usage represented by a power matrix with a heat spreading function. The heat spreading function may be calculated from a simulation of a point source on the integrated circuit using a finite element analysis model of the integrated circuit or other techniques. To account for spatial variations on the chip, the heat spreading function may be made dependent on position using a position scaling function. Steady-state or transient temperature distributions may be computed by using a steady-state or transient heat spreading function. A single heat spreading function may be convolved with various alternative power maps to efficiently calculate temperature distributions for different designs. In an inverse problem, one can calculate the power map from an empirically measured temperature distribution and a heat spreading function using various de-convolution techniques.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: The temperature distribution associated with a design of an integrated circuit is calculated by convoluting a surface power usage represented by a power matrix with a heat spreading function. The heat spreading function may be calculated from a simulation of a point source on the integrated circuit using a finite element analysis model of the integrated circuit or other techniques. To account for spatial variations on the chip, the heat spreading function may be made dependent on position using a position scaling function. Steady-state or transient temperature distributions may be computed by using a steady-state or transient heat spreading function. A single heat spreading function may be convolved with various alternative power maps to efficiently calculate temperature distributions for different designs. In an inverse problem, one can calculate the power map from an empirically measured temperature distribution and a heat spreading function using various de-convolution techniques.

Abstract: Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon—the combination reduces the thermal conductivity below the alloy limit.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: Methods and apparatus for non-contact thermal measurement which are capable of providing sub micron surface thermal characterization of samples, such as active semiconductor devices. The method obtains thermal image information by reflecting a light from a surface of a device in synchronous with the modulation of the thermal excitation and then acquiring and processing an AC-coupled thermoreflective image. The method may be utilized for making measurements using different positioning techniques, such as point measurements, surface scanning, two-dimensional imaging, and combinations thereof. A superresolution method is also described for increasing the resultant image resolution, based on multiple images with fractional pixel offsets, without the need to increase the resolution of the image detectors being utilized.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: A ring resonator coupled laser is described, which has a gain region for creating light radiation, ring resonators for providing a strong mode selection and Vernier effect for wide wavelength tunability, passive waveguides for coupling the light and a pair of reflective mirrors for forming a laser cavity. By combining the ring resonators with the reflective mirrors, a strongly frequency-dependent passive mirror with complex amplitude reflectivity is formed and this ring resonator coupled laser exhibits single longitudinal mode operation with a high side mode suppression ratio, narrow linewidth and reduced frequency chirp. By using two slightly different ring resonators, the wavelength tunability is greatly enhanced. Thus, electro-optic effect is preferred for high speed wavelength tuning in the ring resonator coupled laser.

Abstract: A ring resonator coupled laser is described, which has a gain region for creating light radiation, ring resonators for providing a strong mode selection and Vernier effect for wide wavelength tunability, passive waveguides for coupling the light and a pair of reflective mirrors for forming a laser cavity. By combining the ring resonators with the reflective mirrors, a strongly frequency-dependent passive mirror with complex amplitude reflectivity is formed and this ring resonator coupled laser exhibits single longitudinal mode operation with a high side mode suppression ratio, narrow linewidth and reduced frequency chirp. By using two slightly different ring resonators, the wavelength tunability is greatly enhanced. Thus, electro-optic effect is preferred for high speed wavelength tuning in the ring resonator coupled laser.