Abstract: Embodiments of the present disclosure relate to lipid-PEGylated solid support and phosphoramidites derivatives, methods for preparing the same, and their uses in the delivery of oligonucleotide drugs to the cellular targets.

Abstract: Automatic file system capacity management techniques are provided using file system utilization prediction. One method comprises obtaining input data representing a utilization of a storage capacity of a file system of a given storage system; predicting a future utilization of the storage capacity of the file system based on a portion of the obtained input data; and automatically adjusting the storage capacity of the file system based at least in part on a result of a comparison of the predicted utilization of the storage capacity to a current utilization of the storage capacity. The comparison of the predicted utilization to a current utilization of the storage capacity may comprise comparing the current utilization of the storage capacity to the predicted utilization of the storage capacity for at least first and second time periods following a current time period to determine a trend of the utilization of the storage capacity.

Abstract: Dynamic snapshot scheduling techniques are provided using storage system metrics. One method comprises obtaining a schedule for generating snapshots of a portion of a storage system; automatically adjusting snapshot generation parameters in the schedule based on: (i) a current storage pool usage metric, (ii) an input/output metric of at least one storage resource in the portion of the storage system, (iii) a measure of snapshots in a destroying state, and/or (iv) a measure of a number of created snapshots; and initiating a generation of a snapshot of the storage system portion in accordance with the adjusted schedule. A snapshot generation frequency may be increased in response to an increase of: the current storage pool usage metric, the number of snapshots in the destroying state, and/or the number of created snapshots. A snapshot generation frequency may be decreased in response to an increase of the I/O metric of the at least one storage resource.

Abstract: A coreless component carrier includes (a) a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure; and (b) a component embedded in the stack. At least one electrically insulating layer structure includes a reinforced layer structure, which is arranged at an outer main surface of the stack. Further described is a method for manufacturing such a coreless component carrier and preferably simultaneously a further coreless component carrier of the same type.

Abstract: Methods and systems for using multiple hyperspectral cameras sensitive to different wavelengths to predict characteristics of objects for further processing, including recycling, are described. The multiple hyperspectral images can be used to predict higher resolution spectra by using a trained machine learning model. The higher resolution spectra may be more easily analyzed to sort plastics into a recyclability category. The hyperspectral images may also be used to identify and analyze dark or black plastics, which are challenging for SWIR, MWIR, and other wavelengths. The machine learning model may also predict the base polymers and contaminants of plastic objects for recycling. The hyperspectral images may be used to predict recyclability and other characteristics using a trained machine learning model.

Abstract: A method of manufacturing a component carrier includes forming a poorly adhesive structure on at least one layer structure, thereafter removing part of the poorly adhesive structure to thereby define a lateral limit of the poorly adhesive structure, thereafter attaching at least one further layer structure to the at least one layer structure and to the poorly adhesive structure, and forming a cavity by removing material of the at least one further layer structure above the poorly adhesive structure.

Abstract: One aspect of the invention provides a removable ureteral stent including: an elongated stent with opposing curls at either end; a coil of memory material attached to a curl at one end of the stent that can uncoil and elongate under tensile force, and does so elongate and uncoil at a lower tensile force than that needed to induce substantial uncoiling of either curl, and wherein the coil is at least long enough such that its distal end (from the end attached to the stent) can pass through an internal urethral sphincter, when the stent is in place in the ureter; and a magnet attached to the distal end of the coil.

Abstract: Methods for removing titanium nitride etch by-products from process chambers are provided herein. In some embodiments, a method for the removal of titanium nitride hard mask etch by-products from a process chamber includes processing a substrate having a titanium nitride hard mask. A plasma is then formed from a cleaning gas comprising a chlorine (Cl2) containing gas in the process chamber to remove at least some of the residual titanium nitride etch by-products. In some embodiments, a method for removing titanium nitride etch by-products from process chambers includes a computer readable medium, having instructions stored thereon which, when executed by a controller, causes a process chamber having a substrate comprising a titanium nitride hard mask to be processed. A plasma is then formed from a cleaning gas comprising a chlorine containing gas in the process chamber to remove the residual titanium nitride etch by-products.

Abstract: A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.

Abstract: A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.

Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.

Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature.

Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.

Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface.

Abstract: A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.

Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface.

Abstract: An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low.

Abstract: A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including self-aligned contact structures, where the aspect ratio is typically greater than 3 and the feature size of the contact is about 0.25 &mgr;m or less. In particular, an organic, polymeric-based masking material is used in a plasma etch process for transferring a desired pattern through an underlying layer of dielectric material. The combination of masking material and plasma source gas must provide the necessary high selectivity toward etching of the underlying layer of dielectric material. The selectivity is preferably greater than 3:1, where the etch rate of the dielectric material is at least 3 times greater than the etch rate of the organic, polymeric-based masking material.

Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature.

Abstract: The present invention is a method for removing deposited etch byproducts from surfaces of a semiconductor processing chamber after a copper etch process. The method of the invention comprises the following general steps: (a) an oxidation step, in which interior surfaces of the processing chamber are contacted with an oxidizing plasma; (b) a first non-plasma cleaning step, in which interior surfaces of the processing chamber are contacted with an H+hfac-comprising gas; and (c) a second cleaning step, in which interior surfaces of the processing chamber are contacted with a plasma containing reactive fluorine species, whereby at least a portion of the copper etch byproducts remaining after step (b) are volatilized into gaseous species, which are removed from the processing chamber. The method of the invention is preferably performed at a chamber wall temperature of at least 150° C.