Patents by Inventor ALOK RANJAN

ALOK RANJAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10701103
    Abstract: Systems and methods for securing devices using traffic analysis and Software-Defined Networking (SDN). In some embodiments, an Information Handling System (IHS) may include a processor and a memory coupled to the processor, the memory including program instructions stored thereon that, upon execution by the processor, cause the IHS to: receive traffic in a Software-Defined Network (SDN) network; identify, based upon the received traffic, a security threat; and initiate a remediation measure with respect to the security threat.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: June 30, 2020
    Assignee: Dell Products, L.P.
    Inventors: Chaitanya Aggarwal, Prabhat Chandra Biswas, Alok Ranjan
  • Patent number: 10699911
    Abstract: Plasma processing methods that provide for conformal etching of silicon nitride while also providing selectivity to another layer are described. In one embodiment, an etch is provided that utilizes gases which include fluorine, nitrogen, and oxygen, for example a gas mixture of SF6, N2 and O2 gases. Specifically, a plasma etch utilizing SF6, N2 and O2 gases at high pressure with no bias is provided. The process accelerates silicon nitride etching by chemical reactions of [NO]x molecules from the plasma and [N] atoms from silicon nitride film. The etch provides a conformal (isotropic) etch that is selective to other materials such as silicon and silicon oxides (for example, but not limited to, silicon dioxide).
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: June 30, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Erdinc Karakas, Sonam D. Sherpa, Alok Ranjan
  • Patent number: 10658192
    Abstract: A method of etching is described. The method includes forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H2, and exposing the first material on the substrate to the first chemical mixture to modify a first region of the first material. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material, which contains silicon oxide, relative to the second material and remove the modified first material from the first region of the substrate.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: May 19, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Sonam D. Sherpa, Alok Ranjan
  • Patent number: 10651017
    Abstract: Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: May 12, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sergey Voronin, Jason Marion, Alok Ranjan
  • Publication number: 20200135432
    Abstract: Embodiments of hybrid electron beam and RF plasma systems and methods are described. In an embodiment a method of using a hybrid electron beam and RF plasma system may include forming a field of electrons a first region of a wafer processing structure. Such a method may also include forming a processing plasma in a second region of the wafer processing structure, the second region of the wafer processing structure being coupled to the first region of the wafer processing structure, the processing plasma being maintained by a combination of energy from a radiant energy source and from an electron beam formed from electrons in the field of electrons. Additionally, the method may include controlling a radical composition and ions of the processing plasma by setting a ratio of the energy supplied to the processing plasma from the electron beam and the energy supplied to the processing plasma from the radiant energy source.
    Type: Application
    Filed: October 25, 2018
    Publication date: April 30, 2020
    Inventors: Zhiying Chen, Peter Ventzek, Alok Ranjan
  • Publication number: 20200135431
    Abstract: Embodiments of hybrid electron beam and RF plasma systems and methods are described. In an embodiment a method of using a hybrid electron beam and RF plasma system may include forming a first plasma of a first type in a first region of a wafer processing structure. Additionally, such a method may include forming a second plasma of a second type in a second region of the wafer processing structure, the second region of the wafer processing structure being coupled to the first region of the wafer processing structure, the second plasma being ignited independently of the first plasma, wherein an electron beam formed by the first plasma is configured to modulate one or more characteristics of the second plasma. This hybrid e-beam and RF plasma system provides a source to control electron energy distribution function.
    Type: Application
    Filed: October 25, 2018
    Publication date: April 30, 2020
    Inventors: Zhiying Chen, Peter Ventzek, Alok Ranjan
  • Publication number: 20200105510
    Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.
    Type: Application
    Filed: September 19, 2019
    Publication date: April 2, 2020
    Inventors: Yusuke Yoshida, Jason Marion, Sergey Voronin, Alok Ranjan
  • Patent number: 10607852
    Abstract: A method of etching is described. The method includes forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H2, and exposing the first material on the substrate to the first chemical mixture to modify a first region of the first material. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material, which contains silicon nitride, relative to the second material and remove the modified first material from the first region of the substrate.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: March 31, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Sonam D. Sherpa, Alok Ranjan
  • Publication number: 20200075293
    Abstract: In an embodiment, a plasma processing system includes a vacuum chamber, a substrate holder configured to hold a substrate to be processed where the substrate holder is disposed in the vacuum chamber. The system further includes an electron source disposed above a peripheral region of the substrate holder, the electron source being configured to generate an electron beam towards the peripheral region of the substrate holder.
    Type: Application
    Filed: December 17, 2018
    Publication date: March 5, 2020
    Inventors: Peter Ventzek, Alok Ranjan
  • Publication number: 20200075346
    Abstract: Disclosed embodiments apply electron beams to substrates for microelectronic workpieces to improve plasma etch and deposition processes. The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques. For certain embodiments, DC-biased RF plasma sources, such as DC superposition (DCS) or hybrid DC-RF sources, are used to provide controllable electron beams on surfaces opposite a DC-biased electrode. For certain further embodiments, the DC-biased electrode is pulsed. Further, electron beams can also be generated through electron beam extraction from external and/or non-ambipolar sources. The disclosed techniques can also be used with additional electron beam sources and/or additional etch or deposition processes.
    Type: Application
    Filed: August 29, 2019
    Publication date: March 5, 2020
    Inventors: Peter Ventzek, Alok Ranjan
  • Publication number: 20200075734
    Abstract: Methods and systems for surface modification are described. In an embodiment, a method of etching includes providing a substrate having a device structure, portions of which are identified for modification. Such a method may also include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition at a processing pressure equal to or greater than 100 mTorr to form a protection layer on the target surfaces. Other embodiments of a method may include providing a substrate having a device structure, portions of which identified for removal. Such methods may further include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition, wherein the ratio of the radical content to the ion content exceeds 10-to-1.
    Type: Application
    Filed: September 3, 2019
    Publication date: March 5, 2020
    Inventors: Cedric Thomas, Andrew Nolan, Alok Ranjan
  • Publication number: 20200058470
    Abstract: A method of plasma processing includes generating a first sequence of source power pulses, generating a second sequence of bias power pulses, combining the bias power pulses of the second sequence with the source power pulses of the first sequence to form a combined sequence of alternating source power pulses and bias power pulses, and, using the combined sequence, generating a plasma comprising ions and processing a substrate by delivering the ions to a major surface of the substrate.
    Type: Application
    Filed: December 17, 2018
    Publication date: February 20, 2020
    Inventors: Peter Ventzek, Zhiying Chen, Alok Ranjan
  • Publication number: 20200058469
    Abstract: A plasma processing system includes a vacuum chamber, a first coupling electrode, a substrate holder disposed in the vacuum chamber, a second coupling electrode, and a controller. The substrate holder is configured to support a substrate. The first coupling electrode is configured to provide power for generation of a plasma in the vacuum chamber. The first coupling electrode is further configured to couple source power pulses to the plasma. The second coupling electrode is configured to couple bias power pulses to the substrate. The controller is configured to control a first offset duration between the source power pulses the bias power pulses.
    Type: Application
    Filed: December 13, 2018
    Publication date: February 20, 2020
    Inventors: Alok Ranjan, Peter Ventzek, Mitsunori Ohata
  • Publication number: 20200051833
    Abstract: A process is provided in which a hard mask material comprising ruthenium is used. Ruthenium provides a hard mask material that is etch resistant to many of the plasma chemistries typically used for processing substrate patterning layers, including layers such as, for example, nitrides, oxides, anti-reflective coating (ARC) materials, etc. Further, ruthenium may be removed by plasma chemistries that do not remove nitrides, oxides, ARC materials, etc. For example, ruthenium may be easily removed through the use of an oxygen (O2) plasma. Further, ruthenium may be deposited as a thin planar 10 nm order film over oxides and nitrides and may be deposited as a planar layer.
    Type: Application
    Filed: May 9, 2019
    Publication date: February 13, 2020
    Inventors: Zhiying Chen, Alok Ranjan, Peter Ventzek
  • Publication number: 20200043232
    Abstract: A method and system for exporting a 3D object in an application to a file having a 3D file format is disclosed. The method includes a receiving a request for exporting a 3D object in an application to a file having a 3D file format where the 3D object includes a plurality of components. Upon receiving the request, the components are examined to determine if any of them are a 2D text component. When it is determined that at least one of the components is a 2D text component, a database may be referenced to identify a text character that corresponds to the 2D text component, before replacing the 2D text component with a corresponding 3D model in the file.
    Type: Application
    Filed: November 29, 2018
    Publication date: February 6, 2020
    Applicant: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Prateek AGRAWAL, Bikash Ranjan SWAIN, Hindol ADHYA, Alok AGRAWAL, Saurabh SHRIVASTAVA
  • Patent number: 10541146
    Abstract: A method of etching is described. The method includes providing a substrate having a first material containing organic material and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: January 21, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Vinayak Rastogi, Alok Ranjan
  • Patent number: 10535531
    Abstract: A method of etching is described. The method includes providing a substrate having a first material containing organic material and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing C and O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: January 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Vinayak Rastogi, Alok Ranjan
  • Patent number: 10529589
    Abstract: A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: January 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Erdinc Karakas, Li Wang, Andrew Nolan, Christopher Talone, Shyam Sridhar, Alok Ranjan, Hiroto Ohtake
  • Patent number: 10529540
    Abstract: Methods and systems for treating a substrate are described. In an embodiment, a method may include receiving a microelectronic substrate in a plasma processing chamber. A method may also include receiving process gas in the plasma processing chamber. Additionally, a method may include applying energy to the process gas with a first energy source and applying energy to the process gas with a second energy source. The method may further include selectively adjusting at least one of the first energy source and the second energy source between a first state and a second state.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: January 7, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Sergey Voronin, Christopher Talone, Alok Ranjan
  • Publication number: 20200006081
    Abstract: An isotropic plasma etch process for etching silicon oxide is provided. In an embodiment, a first step, a modification step, includes the use of a fluorocarbon based plasma. This modification step provides for the formation of an interface layer and the deposition of a fluorocarbon film on the surface of the silicon oxide. Then, a second step, a removal step includes the use of an oxygen (O2) based plasma. This removal step removes the fluorocarbon film and the interface layer. To promote isotropic etching, the plasma process is performed with little or no low frequency bias power applied to the system. Thus, ion attraction to the substrate is minimized by providing no low frequency power. Further, relatively high pressures are maintained so as to further promote isotropic behavior.
    Type: Application
    Filed: May 8, 2019
    Publication date: January 2, 2020
    Inventors: Sonam D. Sherpa, Alok Ranjan