Abstract: Methods for anisotropic dry etching of titanium-containing films used in semiconductor manufacturing have been disclosed in various embodiments. According to one embodiment, the method includes providing a substrate having a titanium-containing film thereon, and etching the titanium-containing film by a) exposing the substrate to a chlorine-containing gas to form a chlorinated layer on the substrate, b) exposing the substrate to a plasma-excited inert gas to remove the chlorinated layer, and c) repeating the exposing steps at least once.

Abstract: A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture.

Abstract: A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.

Abstract: Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

Abstract: A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.

Abstract: A network topology viewer provides a simulation of a local area network. Any device communicating via the local area network is represented as an icon with networking details (such as device name, connection type and topology, network address, and port status). Moreover, the network topology viewer is web-based, thus providing a generic or agnostic solution that does not depend on hardware or software capabilities. Any device communicating via the local area network may download the network topology viewer using a software plugin or web-based application. The network topology viewer generates a complete and holistic representation of the local area network, thus simplifying diagnostics and maintenance efforts.

Abstract: A chassis map provides a virtual simulation of internal components operating in an information handling system. Any component operating within the information handling system is represented with an image and displayed according to physical location within a chassis. Moreover, the chassis map is web-based, thus providing a generic or agnostic solution that does not depend on hardware or software capabilities. Any device may download the chassis map using a software plugin or web-based application. The chassis map generates a complete and holistic representation of the information handling system, thus simplifying diagnostics and maintenance efforts.

Abstract: Detecting presence or absence of plasma is accomplished from probe signals. In one embodiment, a low-power modulated signal is applied to an electrostatic chuck from a bias power generator. A corresponding system then monitors peak-to-peak voltage (Vpp) signal responses or radio frequency current responses. The probe signal can be generated to have insufficient power to either ignite or sustain plasma discharge (or cause component damage). Thus, low-duty and/or low current pulsing signals to be used. Presence or absence of the bulk plasma will then result in different Vpp or radio frequency current values.

Abstract: Systems and methods for securing devices using traffic analysis and Software-Defined Networking (SDN). In some embodiments, an Information Handling System (IHS) may include a processor and a memory coupled to the processor, the memory including program instructions stored thereon that, upon execution by the processor, cause the IHS to: receive traffic in a Software-Defined Network (SDN) network; identify, based upon the received traffic, a security threat; and initiate a remediation measure with respect to the security threat.

Abstract: Embodiments of the invention describe substrate processing methods using non-polymerizing chemistry to preferentially etch silicon nitride relative to other materials found in semiconductor manufacturing. According to one embodiment, a processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing SF6, and exposing the substrate to the plasma-excited process gas to preferentially etch the first material relative to the second material. In one example, the process gas can contain or consist of SF6 and Ar. In another example, the second material is selected from the group consisting of Si and SiO2.

Abstract: Methods and systems for selective silicon anti-reflective coating (SiARC) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a SiARC layer, a pattern transfer layer, and an underlying layer. Such a method may also include performing a pattern transfer process configured to remove the resist layer and create a structure on the substrate, the structure comprising portions of the SiARC layer and the pattern transfer layer. The method may additionally include performing a modification process on the SiARC layer of the structure, the modification converting the SiARC layer into a porous SiARC layer. Further, the method may include performing a removal process of the porous SiARC layer of the structure, wherein the modification and removal processes of the SiARC layer are configured to meet target integration objectives.

Abstract: Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (RF) power source configured to couple RF power to a top portion of the process chamber, a second RF power source configured to couple RF power to the holder, and a direct current (DC) power supply. Initially, a process gas for plasma process is flowed into the process chamber. The process gas is ignited to form plasma by activating the second RF power source to apply RF power to the holder. Subsequently, the microelectronic workpiece is clamped to the holder by applying the positive voltage to the holder with the DC power supply, and the first RF power source is activated to maintain the plasma within the process chamber.

Abstract: Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.

Abstract: Techniques herein provide a chamber and substrate cleaning solution for etching and removing byproducts between separate etching steps. Such techniques include using a cleaning step based on fluorine chemistry, which is executed in between separate etch steps or divided etch steps. Such a technique can be executed in situ for improved efficiency. Other benefits include increasing etching depth/aspect ratios, and preventing post-etching defects including physical contact with neighboring gates, etc. Techniques herein are especially beneficial when applied to relatively small feature openings.

Abstract: A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third material.

Abstract: The described embodiments include performing a curing process for selective treatment, or hardening, of PS regions in PS-b-PMMA block copolymer DSA films prior to dry etch development of PMMA regions. In various embodiments, the curing chemistry can be Ar/H2, HBr, N2/H2, etc., which has the capability of generating Vacuum Ultraviolet (VUV) photon flux for polymer curing. The curing effect may enhance the etch resistance of PS regions, thereby freezing the bulk defects during plasma PMMA removal. The defects can then be measured by commonly used metrology techniques like CDSEM and quantized.

Abstract: Systems and methods for in situ hard mask removal are described. In an embodiment, a method includes receiving a semiconductor workpiece comprising a substrate, an intermediary layer, a hard mask layer, and a photoresist layer in an etch chamber. The method may also include etching the hard mask layer to open a region left exposed by the photoresist layer. Additionally, such an embodiment may include etching the intermediary layer in a region left exposed by the hard mask layer. The method may also include removing the hard mask layer. In such embodiments, etching the hard mask layer, etching the intermediary layer, and removing the hard mask layer are performed in the etch chamber, and without the wafer being removed from the etch chamber.

Abstract: Provided is a method of patterning structures on a substrate using an integration scheme in a patterning system, the method comprising: disposing a substrate in a processing chamber, the substrate having a plurality of structures and a pattern, the substrate including an underlying layer and a target layer, at least one structure intersecting with another structure, each intersection having an intersection angle and a corner, the integration scheme requiring a vertical corner profile at each intersection; alternatingly and sequentially etching and cleaning the substrate to transfer the pattern onto the target layer and to achieve a target vertical corner profile at each intersection; controlling selected two or more operating variables of the integration scheme in the alternating and sequential etching and cleaning operations in order to achieve target integration objectives.

Abstract: A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.