Abstract: A method of etching a substrate includes generating plasma comprising a first concentration of an etchant and a second concentration of an inhibitor and etching the substrate by exposing an exposed interface between a first material and a second material to the plasma. The first material includes a lower reactivity to both the etchant and the inhibitor than the second material. The first concentration is less than the second concentration. Etching the substrate includes etching the first material and the second material at the exposed interface to form an etched indentation including an enriched region of the second material, forming a passivation layer at the enriched region using the inhibitor, and etching the first material at the etched indentation. The passivation layer reduces an etch rate of the second material to a reduced rate that is less than an etch rate of the first material.

Abstract: Systems and methods for securing devices using traffic analysis and Software-Defined Networking (SDN). In some embodiments, an Information Handling System (IHS) may include a processor and a memory coupled to the processor, the memory including program instructions stored thereon that, upon execution by the processor, cause the IHS to: receive traffic in a Software-Defined Network (SDN) network; identify, based upon the received traffic, a security threat; and initiate a remediation measure with respect to the security threat.

Abstract: Plasma processing methods that provide for conformal etching of silicon nitride while also providing selectivity to another layer are described. In one embodiment, an etch is provided that utilizes gases which include fluorine, nitrogen, and oxygen, for example a gas mixture of SF6, N2 and O2 gases. Specifically, a plasma etch utilizing SF6, N2 and O2 gases at high pressure with no bias is provided. The process accelerates silicon nitride etching by chemical reactions of [NO]x molecules from the plasma and [N] atoms from silicon nitride film. The etch provides a conformal (isotropic) etch that is selective to other materials such as silicon and silicon oxides (for example, but not limited to, silicon dioxide).

Abstract: A method of etching is described. The method includes forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H2, and exposing the first material on the substrate to the first chemical mixture to modify a first region of the first material. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material, which contains silicon oxide, relative to the second material and remove the modified first material from the first region of the substrate.

Abstract: Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.

Abstract: Embodiments of hybrid electron beam and RF plasma systems and methods are described. In an embodiment a method of using a hybrid electron beam and RF plasma system may include forming a first plasma of a first type in a first region of a wafer processing structure. Additionally, such a method may include forming a second plasma of a second type in a second region of the wafer processing structure, the second region of the wafer processing structure being coupled to the first region of the wafer processing structure, the second plasma being ignited independently of the first plasma, wherein an electron beam formed by the first plasma is configured to modulate one or more characteristics of the second plasma. This hybrid e-beam and RF plasma system provides a source to control electron energy distribution function.

Abstract: Embodiments of hybrid electron beam and RF plasma systems and methods are described. In an embodiment a method of using a hybrid electron beam and RF plasma system may include forming a field of electrons a first region of a wafer processing structure. Such a method may also include forming a processing plasma in a second region of the wafer processing structure, the second region of the wafer processing structure being coupled to the first region of the wafer processing structure, the processing plasma being maintained by a combination of energy from a radiant energy source and from an electron beam formed from electrons in the field of electrons. Additionally, the method may include controlling a radical composition and ions of the processing plasma by setting a ratio of the energy supplied to the processing plasma from the electron beam and the energy supplied to the processing plasma from the radiant energy source.

Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

Abstract: A method of etching is described. The method includes forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H2, and exposing the first material on the substrate to the first chemical mixture to modify a first region of the first material. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material, which contains silicon nitride, relative to the second material and remove the modified first material from the first region of the substrate.

Abstract: Methods and systems for surface modification are described. In an embodiment, a method of etching includes providing a substrate having a device structure, portions of which are identified for modification. Such a method may also include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition at a processing pressure equal to or greater than 100 mTorr to form a protection layer on the target surfaces. Other embodiments of a method may include providing a substrate having a device structure, portions of which identified for removal. Such methods may further include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition, wherein the ratio of the radical content to the ion content exceeds 10-to-1.

Abstract: In an embodiment, a plasma processing system includes a vacuum chamber, a substrate holder configured to hold a substrate to be processed where the substrate holder is disposed in the vacuum chamber. The system further includes an electron source disposed above a peripheral region of the substrate holder, the electron source being configured to generate an electron beam towards the peripheral region of the substrate holder.

Abstract: Disclosed embodiments apply electron beams to substrates for microelectronic workpieces to improve plasma etch and deposition processes. The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques. For certain embodiments, DC-biased RF plasma sources, such as DC superposition (DCS) or hybrid DC-RF sources, are used to provide controllable electron beams on surfaces opposite a DC-biased electrode. For certain further embodiments, the DC-biased electrode is pulsed. Further, electron beams can also be generated through electron beam extraction from external and/or non-ambipolar sources. The disclosed techniques can also be used with additional electron beam sources and/or additional etch or deposition processes.

Abstract: A method of plasma processing includes generating a first sequence of source power pulses, generating a second sequence of bias power pulses, combining the bias power pulses of the second sequence with the source power pulses of the first sequence to form a combined sequence of alternating source power pulses and bias power pulses, and, using the combined sequence, generating a plasma comprising ions and processing a substrate by delivering the ions to a major surface of the substrate.

Abstract: A plasma processing system includes a vacuum chamber, a first coupling electrode, a substrate holder disposed in the vacuum chamber, a second coupling electrode, and a controller. The substrate holder is configured to support a substrate. The first coupling electrode is configured to provide power for generation of a plasma in the vacuum chamber. The first coupling electrode is further configured to couple source power pulses to the plasma. The second coupling electrode is configured to couple bias power pulses to the substrate. The controller is configured to control a first offset duration between the source power pulses the bias power pulses.

Abstract: A process is provided in which a hard mask material comprising ruthenium is used. Ruthenium provides a hard mask material that is etch resistant to many of the plasma chemistries typically used for processing substrate patterning layers, including layers such as, for example, nitrides, oxides, anti-reflective coating (ARC) materials, etc. Further, ruthenium may be removed by plasma chemistries that do not remove nitrides, oxides, ARC materials, etc. For example, ruthenium may be easily removed through the use of an oxygen (O2) plasma. Further, ruthenium may be deposited as a thin planar 10 nm order film over oxides and nitrides and may be deposited as a planar layer.

Abstract: A method of etching is described. The method includes providing a substrate having a first material containing organic material and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.

Abstract: A method of etching is described. The method includes providing a substrate having a first material containing organic material and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing C and O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.

Abstract: A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.

Abstract: Methods and systems for treating a substrate are described. In an embodiment, a method may include receiving a microelectronic substrate in a plasma processing chamber. A method may also include receiving process gas in the plasma processing chamber. Additionally, a method may include applying energy to the process gas with a first energy source and applying energy to the process gas with a second energy source. The method may further include selectively adjusting at least one of the first energy source and the second energy source between a first state and a second state.

Abstract: An isotropic plasma etch process for etching silicon oxide is provided. In an embodiment, a first step, a modification step, includes the use of a fluorocarbon based plasma. This modification step provides for the formation of an interface layer and the deposition of a fluorocarbon film on the surface of the silicon oxide. Then, a second step, a removal step includes the use of an oxygen (O2) based plasma. This removal step removes the fluorocarbon film and the interface layer. To promote isotropic etching, the plasma process is performed with little or no low frequency bias power applied to the system. Thus, ion attraction to the substrate is minimized by providing no low frequency power. Further, relatively high pressures are maintained so as to further promote isotropic behavior.