Abstract: A charged particle beam and a laser beam are used together to micromachine a substrate. A first beam alters the state of a region of the work piece, and the second beam removes material whose state was altered. In one embodiment, an ion beam can create photon absorbing defects to lower the local ablation threshold, allowing the laser beam to remove material in a region defined by the ion beam. The combination of laser beam and charged particle beam allows the creation of features similar in size to the charged particle beam spot size, at milling rates greater than charged particle processing because of the increased energy provided by the laser beam.

Abstract: A charged particle beam and a laser beam are used together to micromachine a substrate. A first beam alters the state of a region of the work piece, and the second beam removes material whose state was altered. In one embodiment, an ion beam can create photon absorbing defects to lower the local ablation threshold, allowing the laser beam to remove material in a region defined by the ion beam. The combination of laser beam and charged particle beam allows the creation of features similar in size to the charged particle beam spot size, at milling rates greater than charged particle processing because of the increased energy provided by the laser beam.

Abstract: Systems configured to perform a non-contact method for determining a property of a specimen are provided. One system configured to perform a non-contact method for determining a property of a specimen includes a focused biasing device configured to provide a stimulus to a focused spot on the specimen. The system also includes a sensor configured to measure a parameter of a measurement spot on the specimen. The measurement spot overlaps the focused spot. The system further includes a processor configured to determine the property of the specimen from the parameter.

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.

Abstract: A dual stage scanning instrument includes a sensor for sensing a parameter of a sample and coarse and fine stages for causing relative motion between the sensor and the sample. The coarse stage has a resolution of about 1 micrometer and the fine stage has a resolution of 1 nanometer or better. The sensor is used to sense the parameter when both stages cause relative motion between the sensor assembly and the sample. The sensor may be used to sense height variations of the sample surface as well as thermal variations, electrostatic, magnetic, light reflectivity or light transmission parameters at the same time when height variation is sensed. By performing along scan at a coarser resolution and short scans a high resolution using the same probe tip or two probe tips at fixed relative positions, data obtained from the long and short scans can be correlated accurately.

Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.

Abstract: A dual stage scanning instrument includes a sensor for sensing a parameter of a sample and coarse and fine stages for causing relative motion between the sensor and the sample. The coarse stage has a resolution of about 1 micrometer and the fine stage has a resolution of 1 nanometer or better. The sensor is used to sense the parameter when both stages cause relative motion between the sensor assembly and the sample. The sensor may be used to sense height variations of the sample surface as well as thermal variations, electrostatic, magnetic, light reflectivity or light transmission parameters at the same time when height variation is sensed. By performing along scan at a coarser resolution and short scans a high resolution using the same probe tip or two probe tips at fixed relative positions, data obtained from the long and short scans can be correlated accurately.

Abstract: A highly sensitive, non-contact tank probe to measure surface conductance of thin film structures, and a method for using the same, are described. The tank probe includes inductor (L), capacitor (C) and resistor (R) circuitry that is driven by a signal generator at the probe's resonant frequency. The conductance of a film structure specimen is determined from measuring the signal that is reflected from the tank probe and it respective frequency. Various types of information can be obtained from the tank probe. For instance, information as to film thickness, doping concentration, and the presence of defects can be obtained. In one embodiment of the invention, the tank probe is formed of integrated circuits within a semiconductor substrate. Another aspect of the present invention pertains to a method of using the tank probe system to measure the conductivity of a material specimen.

Abstract: A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.

Abstract: A dual stage scanning instrument includes a sensor for sensing a parameter of a sample and coarse and fine stages for causing relative motion between the sensor and the sample. The coarse stage has a resolution of about 1 micrometer and the fine stage has a resolution of 1 nanometer or better. The sensor is used to sense the parameter when both stages cause relative motion between the sensor assembly and the sample. The sensor may be used to sense height variations of the sample surface as well as thermal variations, electrostatic, magnetic, light reflectivity or light transmission parameters at the same time when height variation is sensed. By performing along scan at a coarser resolution and short scans a high resolution using the same probe tip or two probe tips at fixed relative positions, data obtained from the long and short scans can be correlated accurately.

Abstract: A profiler or scanning probe microscope may be scanned across a sample surface with a distance between them controlled to allow the sensing tip to contact the surface intermittently in order to find and measure features of interest. The distance is controlled so that when the sensing tip is raised or lowered to touch the sample surface, there is no lateral relative motion between the tip and the sample. This prevents tip damage. Prior knowledge of the height distribution of the sample surface may be provided or measured and used for positioning the sensing tip initially or in controlling the separation to avoid lateral contact between the tip and the sample. The process may also be performed in two parts: a fast find mode to find the features and a subsequent measurement mode to measure the features. A quick step mode may also be performed by choosing steps of lateral relative motion to be smaller than 100 nanometers to reduce probability of tip damage.