Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: An embodiment semiconductor device may include an electrical interconnect layer, a bonding pad electrically coupled to the electrical interconnect layer, a stacked film structure including a first film partially covering a surface of the bonding pad and a second film partially covering the first film, a first aperture formed in the first film over a portion of the surface of the bonding pad, a second aperture formed in the second film such that the second aperture is larger than the first aperture and is formed over the first aperture such that the first aperture is located entirely below an area of the second aperture, and a solder material portion formed in contact with the bonding pad. The solder material portion may include a first width that is less than a size of the second aperture such that the solder material portion does not contact the second film.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: An electronic assembly that includes a substrate having an upper surface and a bridge that includes an upper surface. The bridge is within a cavity in the upper surface of the substrate. A first electronic component is attached to the upper surface of the bridge and the upper surface of the substrate and a second electronic component is attached to the upper surface of the bridge and the upper surface of the substrate, wherein the bridge electrically connects the first electronic component to the second electronic component.

Abstract: Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes bumps to electrically couple the die to the substrate. Ones of the bumps have corresponding bases. The bases have a shape that is non-circular.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.

Abstract: Some embodiments relate to an electronic package. The electronic package includes a first die and a second die stacked onto the first die. A first encapsulant is positioned between the first die and the second die. The first encapsulant includes a first material that covers a first volume between the first die and the second die. A second encapsulant is positioned between the first die and the second die. The second encapsulant includes a second material that covers a second volume between the first die and the second die. The first material has a higher thermal conductivity than the second material, and the second material more effectively promotes electrical connections between the first die and the second die as compared to the first material.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.

Abstract: Apparatuses, systems, and methods associated with spacer elements for maintaining a distance between a substrate and component during reflow are disclosed herein. In embodiments, a substrate assembly may include a substrate and a component. The component may be coupled to the substrate via a solder joint, wherein the solder joint may include a spacer element and solder, the spacer element to maintain a distance between the substrate and the component. Other embodiments may be described and/or claimed.

Abstract: Apparatuses, systems and methods associated with procedures and adhesive elements for affixing components together are disclosed herein. In embodiments, an assembly may include a first component and a second component coupled to the first component. The assembly may further include a plurality of adhesive elements located between the first component and the second component, wherein the plurality of adhesive elements couple the second component to the first component, and wherein each adhesive element of the plurality of adhesive elements is equidistance from adjacent adhesive elements of the plurality of adhesive elements. Other embodiments may be described and/or claimed.

Abstract: A fluid applicator configured to apply a fluid to at least one substrate feature includes a manifold plate having an inflow orifice and a manifold reservoir. A distributor plate is coupled with the manifold plate. The distributor plate includes a distributor surface extending across the manifold reservoir, and a distributor port array spread across the distributor surface and in communication with the manifold reservoir. A compressible reticulated media is configured for applying the fluid to the at least one substrate feature. The compressible reticulated media includes an input interface coupled along the distributor surface, and a substrate interface having an applicator profile corresponding to a feature profile of the at least one substrate feature. Reticulations extend from the input interface to the substrate interface, and the reticulations are distributed across the substrate interface.

Abstract: An electronic assembly that includes a substrate having an upper surface and a bridge that includes an upper surface. The bridge is within a cavity in the upper surface of the substrate. A first electronic component is attached to the upper surface of the bridge and the upper surface of the substrate and a second electronic component is attached to the upper surface of the bridge and the upper surface of the substrate, wherein the bridge electrically connects the first electronic component to the second electronic component.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.

Abstract: Introducing an underfill material over contact pads on a surface of an integrated circuit substrate; and ablating the introduced underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation. A method including first ablating an underfill material to expose an area of contact pads on a substrate using temporally coherent electromagnetic radiation; introducing a solder to the exposed area of the contact pads; and second ablating the underfill material using temporally coherent electromagnetic radiation. A method including introducing an underfill material over contact pads on a surface of an integrated circuit substrate; defining an opening in the underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation; introducing a solder material to the exposed area of the contact pads; and after introducing the solder, removing the sacrificial material.

Abstract: Embodiments of a thermal compression bonding (TCB) process cooling manifold, a TCB process system, and a method for TCB using the cooling manifold are disclosed. In some embodiments, the cooling manifold comprises a pre-mixing chamber that is separated from a mixing chamber by a baffle. The baffle may comprise at least one concentric pattern formed through the baffle such that the primary cooling fluid in the pre-mixing chamber is substantially evenly distributed to the mixing chamber. The pre-mixing chamber may be coupled to a source of primary cooling fluid. The mixing chamber may have an input configured to accept the primary cooling fluid and an output to output the primary cooling fluid.