Abstract: Embodiments of the present disclosure provide a bond stage for bonding a semiconductor integrated circuit (IC) die. The bond stage includes a bonding platform having a top surface and a bottom surface opposing the top surface, a first actuator operable to tilt the bonding platform about a first rotation axis, and a plurality of contact sensors disposed at the bonding platform.

Abstract: Vertically stacked semiconductor devices and methods of fabrication thereof that include a first device structure bonded to a second device structure via bonding layers having compressible metal bonding structures. The compressible metal bonding structures may be fabricated using an electroless deposition (ED) process, and may be less dense with a greater degree of compressibility than equivalent materials deposited by related processes. Accordingly, mating pairs of metal bonding structures may have a degree of compliance that enables effective metal-to-metal contact during a subsequent bonding process. Recrystallization of the metal material during an annealing process may produce shrinkage of the metal material and the formation of void areas between the metal bonds and the surrounding dielectric layers, thereby reducing stress on the surrounding dielectric-to-dielectric interface.

Abstract: An embodiment semiconductor structure may include a first component having first electrical bonding structures formed within a first dielectric layer, a second component having second electrical bonding structures formed with a second dielectric layer, and an organic base layer formed between the first dielectric layer and the second dielectric layer. The organic base layer may include carbon chain structures such that the first dielectric layer is bonded to the second dielectric layer with bonds formed between the first dielectric layer, the organic base layer, and the second dielectric layer. The carbon chain structures may be characterized by a carbon number that is between 10 and 1000 and a hydrogen to carbon ratio H/C that is greater than 2 such that the organic base layer has a thickness that is 0.5 nm to 30 nm. The carbon chain structures may include functional groups that form bonds between the carbon chain structures.

Abstract: A bonding apparatus with a bonding head having vacuum channels and switchable channels, and the method of forming the same are provided. The bonding apparatus may include a vacuum pump, a blower, a controller communicatively coupled to the vacuum pump and the blower, and a bonding head. The bonding head may include a main body, a first vacuum channel in the main body, wherein the first vacuum channel is connected to the vacuum pump, and a first switchable channel in the main body, wherein the first switchable channel is connected to the vacuum pump and the blower.

Abstract: A die bonding tool includes a bond head having a moveable component. The moveable component may be moveable between an extended position in which a lower surface of the moveable component protrudes below a lower surface of the bond head and a retracted position in which the lower surface of the moveable component does not protrude below the lower surface of the bond head. The moveable component may be used to control a shape of a semiconductor die secured to the lower surface of the bond head during a process of bonding the semiconductor die to a substrate. Accordingly, void areas and other bonding defects may be avoided and the bond formed between the semiconductor die and the target substrate may be improved.

Abstract: A bonded assembly may be formed by performing a chip plasma clean process on a semiconductor chip; generating at least one chip infrared image of a cleaned side of the semiconductor chip; measuring an average emissivity of at least one metallic region in the at least one chip infrared image; performing a subsequent processing step selected from a bonding step and an alternative processing step based on the measured average emissivity. The bonding step is performed if the measured average emissivity is less than a predetermined emissivity threshold value. The alternative processing step is performed if the measured average emissivity is greater than the predetermined emissivity threshold value. The alternative processing step may be selected from an additional clean step and an additional inspection step.

Abstract: A bonded assembly may be formed by providing at least a first packaging substrate in a low-oxygen ambient; providing at least a first semiconductor package in the low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient by directing at least one first plasma jet to first solder material portions bonded to the first semiconductor package; and bringing the first solder material portions onto, or in proximity to, first substrate-side bonding structures located on the first packaging substrate while the at least one first plasma jet is directed to the first solder material portions. The first substrate-side bonding structures are treated with the first plasma jet. The first semiconductor package is bonded to the first packaging substrate while, or after, the first substrate-side bonding structures are treated with the first plasma jet.

Abstract: A bonded assembly may be formed by: providing a substrate and a semiconductor chip in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; disposing the semiconductor chip on the substrate; performing a plasma treatment process on a copper-containing surface of a chip bonding pad on the semiconductor chip in the low-oxygen ambient by directing a plasma jet to the chip bonding pad; and attaching a bonding wire to the semiconductor chip and to the substrate such that a first end of the bonding wire is attached to the copper-containing surface and a second end of the bonding wire is attached to a substrate bonding pad on the substrate.

Abstract: A bonded assembly may be formed by providing a wafer comprising at least a first packaging substrate and a second packaging substrate in a low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient while performing a first substrate-treatment process on the first packaging substrate in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; and performing a second plasma package-treatment process on the second semiconductor package while performing a second substrate-treatment process on the second packaging substrate and while bonding the first semiconductor package to the first packaging substrate.

Abstract: An embodiment method of forming a hybrid bond between a first semiconductor device component and a second semiconductor device component may include forming the first semiconductor device component including a first electrical bonding structure formed within a first dielectric material; forming the second semiconductor device component including a second electrical bonding structure formed within a second dielectric material; placing the first semiconductor device component and the second semiconductor device component together such that the first electrical bonding structure is in contact with the second electrical bonding structure; performing a first annealing process that forms a direct metal-to-metal bond between the first electrical bonding structure and the second electrical bonding structure; and performing a second annealing process that forms a direct dielectric-to-dielectric bond between the first dielectric material and the second dielectric material.

Abstract: A die bonding tool includes a bond head that secures a semiconductor die against a planar surface of the bond head, an actuator system that moves the bond head and the semiconductor die towards a surface of a target substrate, and at least one contact sensor configured to detect an initial contact between a first region of the semiconductor die and the surface of the target substrate, where in response to detecting the initial contact between the semiconductor die and the target substrate, the actuator tilts the planar surface of the bond head and the semiconductor die to bring a second region of the semiconductor die into contact with the surface of the target substrate and thereby provide improved contact between the semiconductor die and the target substrate and more effective bonding including instances where the planar surface of the bond head and the target substrate surface are not parallel.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: An embodiment semiconductor device may include an electrical interconnect layer, a bonding pad electrically coupled to the electrical interconnect layer, a stacked film structure including a first film partially covering a surface of the bonding pad and a second film partially covering the first film, a first aperture formed in the first film over a portion of the surface of the bonding pad, a second aperture formed in the second film such that the second aperture is larger than the first aperture and is formed over the first aperture such that the first aperture is located entirely below an area of the second aperture, and a solder material portion formed in contact with the bonding pad. The solder material portion may include a first width that is less than a size of the second aperture such that the solder material portion does not contact the second film.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: An electronic assembly that includes a substrate having an upper surface and a bridge that includes an upper surface. The bridge is within a cavity in the upper surface of the substrate. A first electronic component is attached to the upper surface of the bridge and the upper surface of the substrate and a second electronic component is attached to the upper surface of the bridge and the upper surface of the substrate, wherein the bridge electrically connects the first electronic component to the second electronic component.

Abstract: Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes bumps to electrically couple the die to the substrate. Ones of the bumps have corresponding bases. The bases have a shape that is non-circular.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.