Abstract: In one embodiment, a computing system may access color components of a pixel region in an image, and then determine a color variance for each of the color components. The computing system may further determine a desired bit allocation for each of the color components based on the color variance associated with that color component. The computing system may then determine a total bit allocation for the pixel region based on the desired bit allocations for the color components, as well as a number of unallocated bits available for allocation. The computing system may further determine a final bit allocation for each of the color components by allocating the total bit allocation to each of the color components according to the desired bit allocation for each of the color components. The computing system may then encode each of the color components using the associated final bit allocation.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate; a first silver nanowire layer disposed on the substrate; and a protective layer disposed on the first silver nanowire layer, wherein the protective layer is a patternable photoresist and has an identical pattern as the first silver nanowire layer.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate, a semiconductor die and a frame. The semiconductor die is disposed over the substrate. The frame is disposed over the substrate, wherein the frame is adjacent to the semiconductor die, and the upper surface of the frame is lower than the upper surface of the semiconductor die.

Abstract: Methods for fabricating a biochip for detecting or sequencing biomolecules are shown. Such a biochip may for instance include: a base member; a dielectric layer deposited on the base member and having at least two rows of discrete recesses formed thereon; and two or more electrodes sandwiched between the base member and the dielectric layer and running under respective row of discrete recesses, the two or more electrodes separated from each other along lengths thereof by a portion of the dielectric layer; wherein the dielectric layer defines a continuous operation surface above the electrodes and on which the discrete recesses are deposited for detecting or sequencing of biomolecules, when an electric field is applied through the electrodes, a field gradient is created to draw a biomolecule towards a preferred part of the operation surface.

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a first gate electrode over the semiconductor substrate. The semiconductor device also includes a first gate dielectric layer between the first gate electrode and the semiconductor substrate. The semiconductor device further includes a second gate electrode over the semiconductor substrate. The second gate electrode has an upper portion and a lower portion between the upper portion and the semiconductor substrate, and the upper portion is wider than the lower portion. In addition, the semiconductor device includes a second gate dielectric layer between the second gate electrode and the semiconductor substrate.

Abstract: A fan module containing a fan is used to cool a computing device or system. The fan module is mounted within a chassis, and contains a housing, a locking body, and lever. The housing of the fan module contains a housing, a locking body, and lever. The housing of the fan module defines a hollow interior that houses the fan. The locking body is coupled to the housing and is moveable between a locked position and an unlocked position. When in the locked position, the locking body extends through a locking aperture in the floor of the chassis. When in the unlocked position, the locking body rises above the locking aperture in the floor of the chassis. Moving the lever from the first position to the second position causes the locking body to move from the locked position to the unlocked position.

Abstract: A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.

Abstract: A method includes depositing a mask layer over a dielectric layer, patterning the mask layer to form a trench, applying a patterned photo resist having a portion over the mask layer, and etching the dielectric layer using the patterned photo resist as an etching mask to form a via opening, which is in a top portion of the dielectric layer. The method further includes removing the patterned photo resist, and etching the dielectric layer to form a trench and a via opening underlying and connected to the trench. The dielectric layer is etched using the mask layer as an additional etching mask. A polymer formed in at least one of the trench and the via opening is removed using nitrogen and argon as a process gas. The trench and the via opening are filled to form a metal line and a via, respectively.

Abstract: A semiconductor device includes first and second nanowire structures, first and second annular hafnium oxide layers, first and second annular cap layers, and first and second metal gate electrodes. The first and second nanowire structures are suspended over a substrate and respectively have an n-channel region and a p-channel region. The first and second annular hafnium oxide layers encircle the n-channel region and the p-channel region, respectively. The first and second annular cap layers encircle the first and second annular hafnium oxide layers, respectively. The first and second annular cap layers are made of a same material that is lanthanum oxide, yttrium oxide, or strontium oxide. The first and second metal gate electrodes encircle the first and second annular cap layers, respectively. The first and second metal gate electrodes have a same metal composition.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: In some embodiments, a field effect transistor structure includes a first semiconductor structure and a gate structure. The first semiconductor structure includes a channel region, and a source region and a drain region. The source region and the drain region are formed on opposite ends of the channel region, respectively. The gate structure includes a central region and footing regions. The central region is formed over the first semiconductor structure. The footing regions are formed on opposite sides of the central region and along where the central region is adjacent to the first semiconductor structure.

Abstract: A display apparatus includes a light-transmitting structural plate, some optical microscopic structures, an optical film, a base plate and some light emitting elements. The light-transmitting structural plate has a first side and a second side opposite to each other. The optical microscopic structures are regularly arrayed and formed on the first side or the second side. The optical microscopic structure has an inclined surface connecting at a connecting line and forming an angle ranging between 30 degrees and 150 degrees with a corresponding inclined surface of an adjacent one of the optical microscopic structures. The optical film is located on the first side. The base plate is separated from the second side by a space. The light emitting elements are located inside the space and disposed on the base plate. The light emitting elements respectively emit a light ray to the light-transmitting structural plate.

Abstract: A tramp metal removing device has a primary housing to define a product flow path for being passed by a stream of raw materials and a moving path. A secondary housing is connected to the primary housing. A plurality of drawer units are sequentially stacked on the primary housing and secondary housing. Each drawer unit has a frame, a plurality of magnetic members and a scraping assembly. The frame is coupled with the primary and secondary housings in a movable way. Each of magnetic members is secured on the frame and has a magnetic section and a non-magnetic section. The scraping assembly is coupled with the frame in a way that it is only moveable in the secondary housing for removing tramp metals of a stream of raw materials in a two-stage manner.

Abstract: A method includes forming a first active fin structure and a second active fin structure on a substrate. A dummy fin structure is formed on the substrate, the dummy fin structure being interposed between the first active fin structure and the second active fin structure. The dummy fin structure is removed to expose a first portion of the substrate, the first portion of the substrate being disposed directly below the dummy fin structure. A plurality of protruding features is formed on the first portion of the substrate. A shallow trench isolation (STI) region is formed over the first portion of the substrate, the STI region covering the plurality of protruding features, at least a portion of the first active fin structure and at least a portion of the second active fin structure extending above a topmost surface of the STI region.

Abstract: A system for intra-operatively registering a pelvis comprising an acetabulum with a computer model of the pelvis in a coordinate system. The system may include: a) a surgical navigation system including a tracking device; and b) at least one computing device in communication with the surgical navigation system. The at least one computing device: i) receiving first data points from first intra-operatively collected points on an articular surface of the acetabulum, the first data points collected with the tracking device; ii) receiving a second data point from a second intra-operatively collected point on the pelvis, the second data point collected with the tracking device, the second data point corresponding in location to a second virtual data point on the computer model; and iii) determining an intra-operative center of rotation of the femur relative to the pelvis from the first data points.

Abstract: A contextual label compression framework is presented that uses trained sequence to sequence models. A set of training data including received queries and related content can be processed to generate sequences of semantic encodings. These sequences can be used to train the sequence to sequence models, in order to be able to predict queries for instances of content when the relevant information for those instances is processed by the model. When such information is received for an instance, that information can be processed to generate a semantic encoding sequence which can then be processed by the model. A resulting semantic sequence output by the model can be segmented and decoded to produce a set of relevant queries for the instance of content. This information can then be provided to an entity associated with the instance of content for purposes in managing aspects relating to that content.

Abstract: A waterproof structure includes a housing and a waterproof button. The housing has a first surface, a first side surface, and a second surface. The first side surface is recessed in the first surface to define a first opening, the first side surface is connected between the first surface and the second surface, and the second surface is exposed from the first opening. The waterproof button is disposed in the first opening and includes at least one first water blocking structure, and the first water blocking structure is pressed and deformed to abut against the first side surface.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.

Abstract: The present invention is related to a suture having a cord member. The cord member includes a cord and an outer later covering the core. An outer circumferential surface of the core includes a plurality of protrusions, and the plurality of protrusions are arranged in a ring shape relative to a center of the core. Through spiral cutting method to perform processing on the outer circumferential surface of the outer surface, a plurality of cutting slots are formed at the outer circumferential surface of the outer layer. After the processing of each cutting slot is complete, a protruding member for retaining skin is formed correspondingly.

Abstract: Methods are disclosed herein that improve contours of trenches formed when fabricating vias and conductive lines of a multi-layer interconnect (MLI) structure. An exemplary device that can result from such methods includes a via of an MLI structure and a conductive line of the MLI structure disposed over the via. A first dielectric liner layer is disposed along sidewalls of the via and sidewalls of the conductive line. A thickness of the first dielectric liner layer is substantially the same along the sidewalls of the via. A thickness of the first dielectric liner layer increases along the sidewalls of the conductive line, such that the first dielectric liner layer has a tiger-tooth shape at each bottom corner of the conductive line. A second dielectric liner layer is disposed along the first dielectric liner layer that is disposed along the sidewalls of the via.