Abstract: In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.

Abstract: In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.

Abstract: A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure.

Abstract: A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.

Abstract: An imaging method for microcalcification displays microcalcification distribution by acquiring and overlapping a photoacoustic image of microcalcification and an ultrasonic image of tissue. The image acquired by the present invention, in comparison to images acquired by ultrasonic and X-ray mammography, has advantages in no speckle noises, higher optical contrast, higher ultrasonic resolution, and so on. The present invention also has advantage in safety by adopting a light source having no ionizing radiation. An imaging method for diagnosing breast cancer is also herein disclosed.

Abstract: A key management method for wireless networks is disclosed. Before a mobile station residing in a first ASN switches to a neighboring second ASN, an authentication process between the mobile station and the second ASN is implemented. Thus, the authentication process is not required when the mobile station is switching to the second ASN.

Abstract: A phase change memory device is disclosed. A first dielectric layer having a sidewall is provided. A bottom electrode is adjacent to the sidewall of the first dielectric layer, wherein the bottom electrode comprises a seed layer and a conductive layer. A second dielectric layer is adjacent to a side of the bottom electrode opposite the sidewall of the first dielectric layer. A top electrode couples the bottom electrode through a phase change layer.

Abstract: An optical information storage medium includes a first substrate, a first recording layer, a first reflective layer, a spacer layer, a second recording layer, a second reflective layer, and a second substrate. In this case, the first recording layer is disposed above the first substrate. The first reflective layer is disposed above the first recording layer. The spacer layer is disposed above the first reflective layer. The second recording layer is disposed above the spacer layer, and the second recording layer is made of an inorganic material. The second reflective layer is disposed above the second recording layer. The second substrate is disposed above the second reflective layer.

Abstract: An optical information storage medium includes a first substrate, a first recording layer, a first reflective layer, a spacer layer, a second recording layer, a second reflective layer and a second substrate. In this case, the first recording layer is disposed above the first substrate. The first reflective layer is disposed above the first recording layer. The spacer layer is disposed above the first reflective layer. The second recording layer is disposed above the spacer layer. The second reflective layer is disposed above the second recording layer. The second substrate is disposed above the second reflective layer and the second substrate has a groove, wherein the depth of the groove is smaller than 100 nm.

Abstract: An optical information storage medium includes a first substrate, a first recording layer, a first reflective layer, a spacer layer, a second recording layer, a second reflective layer and a second substrate. In this case, the first recording layer is disposed above the first substrate. The first reflective layer is disposed above the first recording layer. The spacer layer is disposed above the first reflective layer. The second recording layer is disposed above the spacer layer. The second recording layer, which is made of cyanine dye, is disposed above the second recording layer. The second substrate is disposed above the second reflective layer.

Abstract: An optical information storage medium includes a first substrate, a first recording layer, a first reflective layer, a spacer layer, a second recording layer, a barrier layer, a second reflective layer, and a second substrate. In this case, the first recording layer is disposed above the first substrate. The first reflective layer is disposed above the first recording layer. The spacer layer is disposed above the first reflective layer. The second recording layer, which is made of inorganic material, is disposed above the spacer layer. The barrier layer is disposed above the second recording layer. The second reflective layer, which is made of inorganic material, is disposed above the barrier layer. The second substrate is disposed above the second reflective layer.

Abstract: An optical information storage medium includes a first substrate, a first recording layer, a first reflective layer, a spacer layer, a second recording layer, a second reflective layer, and a second substrate. In this case, the first recording layer is disposed above the first substrate. The first reflective layer is disposed above the first recording layer. The spacer layer is disposed above the first reflective layer. The second recording layer is disposed above the spacer layer, and the second recording layer is made of an inorganic material. The second reflective layer is disposed above the second recording layer. The second substrate is disposed above the second reflective layer.

Abstract: A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol solution for activating the surface of wafer and into an ammonium fluoride solution as an etching solution; and illuminating the back of wafer with a halogen light and performing a photoelectrochemical etching process in a potentiostatic.

Abstract: A method for producing sculpturesque polyresin models in horticulture use includes the following steps. First, a prototype (21) is directly made of sand stone. Then a mold (22) is made according to the shape of the prototype (21). The raw material of sculpturesque polyresin models including polyresin, hardeners, sand, cement and colored powders is then mixed together. After that, the polyresin mixture (23) is liquefied to a phase (24) and injected into the mold. The liquefied polyresin mixture (23)in the mold is then solidified to form a solid model (25). The intermediate model (25) is then put through a cleaning and evening process (26), and after assembling any desired accessory (27), final product is formed.

Abstract: A phase transition type recording medium. On a substrate, a lower dielectric layer is formed. An adding dielectric layer having a high reflectivity is formed on the lower dielectric layer. A recording layer is formed on the adding high reflective dielectric layer. An upper dielectric layer is formed on the recording layer. A reflective layer is formed on the upper dielectric layer, and a protecting layer is further formed on the reflective layer.

Abstract: A structure of an optical recording medium that mainly includes a first dielectric layer, a dye layer, a second dielectric layer, and a reflective layer formed on a substrate in sequence, and a method for fabricating an optical recording medium of the foregoing structure. The additional dielectric layers of the optical recording medium, instead of a quencher used in a conventional optical recording medium, increase the lifetime of a dye layer and reduce the fabrication cost. Furthermore, the additional dielectric layers are capable of isolating the dye layer from oxygen and moisture to enhance the lightfastness of the dye layer.

Abstract: An apparatus for coating a magneto-optical recording medium film onto a disk substrate are provided. For proceeding the sputtering processes, a sputtering target containing Tb, Fe, and Co composition is prepared and placed in a sputtering gun which is served as a sputtering source. Facing to the sputtering gun, a clamping mechanism having a plurality of clampers arranged around the clamping mechanism is provided for clamping disk substrate thereon. During sputtering processes, the clamping mechanism is rotated about its axial center, and at the same time each clamper of the clamping mechanism is rotated about its axial center respectively. The clamper is designed in a form of facing the plane of the sputtering gun at a proper tilt angle, preferably 15 degrees, so that the disk substrate may be sputtered with a uniform thickness and composition of magneto-optical recording medium film thereon.

Abstract: A polarized-light scatterometer for measuring the thickness of a film coated on the partial of a substrate, the film having a straight line edge on the surface of the substrate coated with the film.