Patents by Inventor An CHU

An CHU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240043675
    Abstract: A thermoplastic resin composition of the present invention comprises about 100 parts by weight of a rubber-modified aromatic vinyl-based copolymer resin; about 5 to about 25 parts by weight of a polyetheresteramide block copolymer; about to about 1.5 parts by weight of a silver (Ag)-based compound; and about 1 to about 15 parts by weight of zinc oxide, wherein the weight ratio of the polyetheresteramide block copolymer and the sum of the silver-based compound and the zinc oxide (polyetheresteramide block copolymer: silver-based compound+zinc oxide) is about 1:0.1 to about 1:2. The thermoplastic resin composition has excellent antiviral properties, weather resistance, impact resistance, and the like.
    Type: Application
    Filed: November 9, 2021
    Publication date: February 8, 2024
    Inventors: Eun Jin KIM, Dong Hui CHU, Young Chul KWON
  • Publication number: 20240046097
    Abstract: A computer-implemented method for compressing a machine learning model includes converting an input machine learning model into a standard machine learning model. The method further includes converting the standard machine learning model into a plurality of pruned machine learning models, each of the pruned machine learning models converted using a corresponding pruning ratio from a pruning ratio candidate list. The method further includes determining, for each of the pruned machine learning models, a size-to-error ratio. The method further includes selecting, based on the size-to-error ratio of the pruned machine learning models, a first pruning ratio from the pruning ratio candidate list. The method further includes generating a compressed machine learning model by compressing the input machine learning model using the first pruning ratio that is selected. The method further includes deploying the compressed machine learning model for production.
    Type: Application
    Filed: August 5, 2022
    Publication date: February 8, 2024
    Inventors: De Gao Chu, Lin Dong, Xiao Tian Xu, Xue Yin Zhuang
  • Patent number: 11894267
    Abstract: A method for fabricating an integrated circuit device is provided. The method includes forming an interconnect layer over a substrate, wherein the interconnect layer has a first interlayer dielectric layer, a first conductive feature in a first portion of the first interlayer dielectric layer, and a second conductive feature in a second portion of the first interlayer dielectric layer; depositing a dielectric layer over the interconnect layer; removing a first portion of the dielectric layer over the first conductive feature and the first portion of the first interlayer dielectric layer, and remaining a second portion of the dielectric layer over the second conductive feature and the second portion of the first interlayer dielectric layer; and forming a memory structure over the first conductive feature.
    Type: Grant
    Filed: January 5, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsia-Wei Chen, Fu-Ting Sung, Yu-Wen Liao, Wen-Ting Chu, Fa-Shen Jiang, Tzu-Hsuan Yeh
  • Patent number: 11890612
    Abstract: A multi-channel pipetting assembly includes a linkage member and a plurality of pipetting structures arranged in parallel. Each pipetting structure includes a pipette body, a piston rod, a piston tube, and an elastic element. The pipette body has a plurality of air chambers with different inner diameters, and the air chambers are arranged axially and communicate with each other. The piston rod is fixed to the linkage member. The piston tube is sleeved on the piston rod. The piston rod and the piston tube are located in the pipette body, and are axially and reciprocatingly movable in the pipette body. The piston rod matches the air chamber with the smallest inner diameter, and the piston tube matches the remaining air chambers. The elastic element is telescopically sleeved on the piston rod and corresponds to the piston tube. Therefore, a plurality of volume ranges meeting the accuracy requirements can be provided.
    Type: Grant
    Filed: April 29, 2021
    Date of Patent: February 6, 2024
    Assignee: WISTRON CORPORATION
    Inventors: Chi-Neng Weng, Chih-Kuan Lin, Shao-Wei Peng, Chih-Ying Chu
  • Patent number: 11894336
    Abstract: An integrated fan-out (InFO) package includes a die, a plurality of conductive structures aside the die, an encapsulant laterally encapsulating the die and the conductive structure, and a redistribution structure. The redistribution structure is disposed on the encapsulant. The redistribution structure includes a plurality of routing patterns, a plurality of conductive vias, and a plurality of alignment marks. The routing patterns and the conductive vias are electrically connected to the die and the conductive structures. The alignment marks surround the routing patterns and the conductive vias. The alignment marks are electrically insulated from the die and the conductive structures. At least one of the alignment marks is in physical contact with the encapsulant, and vertical projections of the alignment marks onto the encapsulant have an offset from one another.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: February 6, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jhih-Yu Wang, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao, Yung-Chi Chu
  • Patent number: 11890210
    Abstract: The present disclosure relates generally to the field of medical devices. In particular, the present disclosure relates to delivering a variable length stent within a patient. In one example, a stent may include a body comprising coils about a longitudinal axis of the stent and along the length of the stent between a proximal end and a distal end in a substantially helical pattern. The coils may define a lumen along the longitudinal axis through the center of the body. A distal tube may have a wall extending from the distal end of the body. A first aperture may extend through the wall of the distal tube into the lumen. A distal retention member may extend from the distal tube. A distal suture may have a mid-portion. The mid-portion may extend through the first aperture.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: February 6, 2024
    Assignee: BOSTON SCIENTIFIC SCIMED, INC.
    Inventors: Michael S H Chu, Mayur K. Patel, Sacha Tang
  • Patent number: 11890658
    Abstract: A large-width cathode roller for producing high-strength ultra-thin copper foil includes titanium side plates and a titanium cylinder sealed by the titanium side plates, and a cathode roller core penetrated through the titanium side plates. Steel-copper explosive clad cylinders and a steel support plate are disposed in/on the side plate, inner ring surfaces of the side plates and the copper plates are connected to a copper sleeve around the cathode roller core, outer ring surfaces of the copper plates and the steel support plates are connected to a copper cylinder, inner ring surfaces of the steel support plates are connected to the cathode roller core; and multiple electrically conductive support rings on the copper cylinder are connected to the copper plates on two sides through the electrically conductive copper bars to form a conducting loop to improve the distribution uniformity of the current on the surface of the cathode roller.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: February 6, 2024
    Assignee: Xi'an Taijin New Energy & Materials Sci-Tech Co., Ltd.
    Inventors: Le Zhang, Qing Feng, Siqi Wang, Chu Shen, Xiuling He, Bo Yang, Dong Miao
  • Patent number: 11895811
    Abstract: A curved electronic device and a method for manufacturing the same are disclosed. The curved electronic device includes a substrate, a component layer, and a modulation layer. The component layer is disposed on the substrate. The component layer is composed of a plurality of electronic components and their connecting wiring arranged on the substrate. The modulation layer is disposed on the component layer, and includes at least one pattern area and at least one blank area that are formed on the component layer. The blank area allows one part of the electronic components to be exposed out of the modulation layer. The modulation layer and the substrate have different heat absorption rates, so that the positions of the substrate corresponding to the blank area and the pattern area have different degrees of softening, so as to prevent the component layer from being damaged in the process of stretching the substrate.
    Type: Grant
    Filed: November 4, 2021
    Date of Patent: February 6, 2024
    Assignees: INTERFACE TECHNOLOGY (CHENGDU) CO., LTD., INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD., INTERFACE OPTOELECTRONICS (WUXI) CO., LTD., GENERAL INTERFACE SOLUTION LIMITED
    Inventors: Ping-Hsiang Kao, Wen-You Lai, Po-Lun Chen, Chun-Ta Chen, Po-Ching Lin, Ya-Chu Hsu
  • Patent number: 11891293
    Abstract: A smart energy-saving device for automatic blending drinks, adopted to inject beverages into at least one beverage cup that comprises a bar code, comprises: beverage barrels; manifolds; at least one ice-storing device including at least one ice outlet, at least one servomotor, a stirring rod, and at least one thruster; beverage stations; collection mechanisms including ring structures, ice inlets, water inlets, and beverage tubes; and a control module including flowmeters, water valve switches, beverage-cup-weight sensors, beverage-barrel-weight sensors, at least one ice-beverage-barrel-weight sensor, pressure sensors, bar code readers, infrared scanners; and a controller.
    Type: Grant
    Filed: December 2, 2021
    Date of Patent: February 6, 2024
    Inventor: Chien-Jung Chu
  • Patent number: 11893562
    Abstract: In some implementations, a terminal device may obtain exchange information associated with an exchange initiated at the terminal device. The exchange information may identify a medium used in the exchange. The terminal device may be configured to present a terminal-side user interface for performing a signing operation of the exchange. The terminal device may selectively obtain user information associated with the medium used in the exchange. The user information may identify a user device associated with the medium. The terminal device may transmit, to the user device and based on obtaining the user information, presentation information that identifies content for a user-side user interface for performing the signing operation at the user device. The terminal device may receive, from the user device, signing information associated with a performance of the signing operation at the user device via the user-side user interface.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: February 6, 2024
    Assignee: Capital One Services, LLC
    Inventors: Jonatan Yucra Rodriguez, Sahil Verma, Jonathan Guan, Jennifer Chu
  • Patent number: 11894465
    Abstract: Deep gate-all-around semiconductor devices having germanium or group 111-V active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate. The hetero-structure includes a hetero-junction between an upper layer and a lower layer of differing composition. An active layer is disposed above the hetero-structure and has a composition different from the upper and lower layers of the hetero-structure. A gate electrode stack is disposed on and completely surrounds a channel region of the active layer, and is disposed in a trench in the upper layer and at least partially in the lower layer of the hetero-structure. Source and drain regions are disposed in the active layer and in the upper layer, but not in the lower layer, on either side of the gate electrode stack.
    Type: Grant
    Filed: February 12, 2021
    Date of Patent: February 6, 2024
    Assignee: Google LLC
    Inventors: Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros, Han Wui Then, Gilbert Dewey, Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee
  • Patent number: 11894439
    Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: February 6, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Heng-Ching Lin, Yu-Teng Tseng, Chu-Chun Chang, Kuo-Yuh Yang, Chia-Huei Lin
  • Patent number: 11892265
    Abstract: An anti dry fire trigger device contains: a holder, a fixer, a string hook, a connection trigger, a safety switch, and an engagement element. The holder includes a channel, a slidable actuation element, and an accommodation groove having two defining orifices. The fixer includes a push portion, a limitation portion, and a first rotatable coupling portion. The string hook includes a hooking portion, an abutting portion, and a second rotatable coupling portion. The connection trigger rotatably includes a fastening portion and a driving portion. The safety switch slidably includes two slidable posts configured to limit the safety switch on an opening position and a closing position. The engagement element slidably is connected with the safety switch and includes a defined portion.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: February 6, 2024
    Assignee: Man Kung Enterprise Co., Ltd.
    Inventors: Fu-Hui Chu, Ching-Chi Hung
  • Patent number: 11894367
    Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: February 6, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11895436
    Abstract: A device (100) includes a display (110) itself including pixel groups. A bottom and sides of each of the pixel groups are covered with non-reflective material. The pixel groups are electrically coupled together with transparent conductive interconnections. A camera (122) is located beneath the display and the camera is configured to sense light that passes through the display.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: February 6, 2024
    Assignee: Google LLC
    Inventors: Chung Chun Wan, Ping Tong Chu
  • Patent number: 11894421
    Abstract: Various examples of an integrated circuit device and a method for forming the device are disclosed herein. In an example, a method includes receiving a workpiece that includes a substrate, and a device fin extending above the substrate. The device fin includes a channel region. A portion of the device fin adjacent the channel region is etched, and the etching creates a source/drain recess and forms a dielectric barrier within the source/drain recess. The workpiece is cleaned such that a bottommost portion of the dielectric barrier remains within a bottommost portion of the source/drain recess. A source/drain feature is formed within the source/drain recess such that the bottommost portion of the dielectric barrier is disposed between the source/drain feature and a remainder of the device fin.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.V
    Inventors: Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen, Feng-Cheng Yang
  • Patent number: 11890673
    Abstract: A dross extraction system for a printer is disclosed, which includes an ejector defining an inner cavity associated therewith, the inner cavity retaining a liquid printing material. The dross extraction system also includes a first inlet coupled to the inner cavity of the ejector, a probe external to the ejector, which is selectably positionable to contact the liquid printing material to attract dross thereto, thereby extracting dross from the liquid printing material when the probe is withdrawn from the liquid printing material. A method of extracting dross from a metal jetting printer is also disclosed, which includes pausing an operation of the metal jetting printer, advancing a probe into a melt pool within a nozzle pump reservoir in the metal jetting printer, extracting dross from the metal printing material and onto the probe, retracting the probe from the nozzle pump reservoir, and resuming the operation of the metal jetting printer.
    Type: Grant
    Filed: July 13, 2021
    Date of Patent: February 6, 2024
    Assignee: ADDITIVE TECHNOLOGIES, LLC
    Inventors: Linn C. Hoover, Joseph C. Sheflin, Jason M. LeFevre, Seemit Praharaj, David Alan Vankouwenberg, Chu-Heng Liu, Douglas K. Herrmann
  • Patent number: 11893506
    Abstract: A method may include obtaining a plurality of training samples with a plurality of classifications that include a first classification and a second classification, training an initial tree with an initial set of training samples selected from the plurality of training samples using an initial set of feature values extracted from the set of training samples, and, in response to determining that the initial tree incorrectly classified the initial set of training samples at an output node of the initial tree, training a subsequent tree using a subsequent set of feature values extracted from a subsequent set of training samples.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: February 6, 2024
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Xiangdong Wang, Yibo Liu, Peter L. Chu
  • Patent number: 11895760
    Abstract: Devices and methods that use returned power (RP) measurements during microwave energy delivery to perform one or more functions. For example, microwave devices and systems with one or more features to measure the returned microwave power. One or more measurements of the returned microwave power may be used to obtain information about one or more of: antenna shape, system status and system performance. One or more measurements of the returned microwave power shaping elements may also be used to obtain information about one or more properties of the target material. Devices and methods for delivering microwave energy to a variety of target materials to achieve a variety of desired microwave effects.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: February 6, 2024
    Assignee: MicroCube, LLC
    Inventors: Chun Yiu Chu, Dinesh I. Mody, Ketan Shroff, Amrish J. Walke, Kirby Chiang, Christopher Ah New, Christine M. Tate
  • Patent number: 11894437
    Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: February 6, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chih-Chien Chi, Chien-Shun Liao, Keng-Chu Lin, Kai-Ting Huang, Sung-Li Wang, Yi-Ying Liu, Chia-Hung Chu, Hsu-Kai Chang, Cheng-Wei Chang