Abstract: In the present application, the automatic cleaner comprises a housing, a first pipeline for extracting liquid from a bucket to be cleaned, and a second pipeline for injecting detergent into the bucket to be cleaned; the first pipeline and the second pipeline are both disposed on an inner wall of the housing, and the housing is configured to be enclosed to form a receiving space for receiving the bucket to be cleaned.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.

Abstract: A fan clutch wrench is provided, including a rod and a driving member. The driving member includes a longitudinal direction and a thickness direction, two opposite ends of the driving member on the longitudinal direction are respectively defined as a first end and a second end, the second end is rotatably connected to the rod, an engagement hole penetrates through the first end in the thickness direction, the engagement hole penetrates through the first end to form a first lateral opening along a direction which is lateral to the thickness direction and lateral to the longitudinal direction, and the first lateral opening is for a fastener of a fan clutch to pass therethrough to be engaged with the engagement hole.

Abstract: An output buffer set is coupled to a first pair of pins and configured to output art audio output signal to the first pair of pins. A direct current (DC) shifting buffer set is coupled between the audio codec circuit and the first pair of pins, and is directly coupled to the output buffer set and the first pair of pins. An audio port is coupled to the first pair of pins. The DC shifting buffer set is configured to receive a first audio input signal from the audio port through the first pair of pins. The audio codec circuit is configured to record the audio output signal back and mix the recorded audio output signal with a second audio input signal, or mix the first audio input signal with a third audio input signal.

Abstract: The present disclosure provides an operation apparatus operating based on the Winograd algorithm for multiplying a first matrix by a second matrix to generate a third matrix, including a plurality of second accumulated value calculation units, of which one second accumulated value calculation unit is configured to accumulate second multiplication values obtained by multiplying each of paired element values of the second matrix, a second accumulated value output unit outputting selecting and outputting one of output values of adjacent second accumulated value calculation unit and an accumulated second multiplication value as a second accumulated value, a third accumulated value output unit including a plurality of third accumulated value calculation units and generating third accumulated value, and one or more row element value calculation units, of which one row element value calculation unit is configured to accumulate first matrix element multiplication values obtained by multiplying each of the paired elem

Abstract: A quantum dot quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, and a first hole auxiliary layer between the first electrode and the light emitting layer, wherein the first hole auxiliary layer includes a first hole auxiliary material and a second hole auxiliary material having a greater bandgap energy than a bandgap energy of the first hole auxiliary material, a difference between a HOMO energy level of the second hole auxiliary material and a HOMO energy level of the first hole auxiliary material is about 0.1 eV and less than about 0.8 eV, and a difference between a LUMO energy level of the second hole auxiliary material and a LUMO energy level of the first hole auxiliary material is greater than or equal to about 0.3 eV.

Abstract: A semiconductor device includes a semiconductor substrate, an interfacial layer formed on the semiconductor substrate, a high-k dielectric layer formed on the interfacial layer, and a conductive gate electrode layer formed on the high-k dielectric layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity, and the first and second polarities are opposite.

Abstract: A process for preparing a catalyst material, includes: (a) providing a support material having surface hydroxyl (OH) groups, the support material is ceria (CeO2), zirconia (ZrO2) or a combination, and the support material contains between 0.3 and 2.0 mmol OH groups/g of the support material; (b) reacting the support material with at least one of: (b1) a compound containing at least one alkoxy or phenoxy group bound though its oxygen atom to a metal element from Group 5 (V, Nb, Ta) or Group 6 (Cr, Mo, W); (b2) a compound containing at least one hydrocarbon group bound though a carbon atom to a metal element from Group 5 or 6; (b3) a compound containing at least one hydrocarbon group bound though a carbon atom to a metal element which is copper (Cu); and (c) calcining the product obtained in step (b).

Abstract: A carbon nanotube-based thin-film resistive sensor is disclosed. The sensor includes carbon nanotube film functionalized with sensing moieties and is configured for use in rapid screening for pathogens in point of care settings.

Abstract: A display method of an image is disclosed. A position of a vergence surface of a user is obtained through a gaze tracking device. An image is provided by a display, the image is located at a virtual image surface, and the image has an offset between different view directions. A controller is coupled to the gaze tracking device and the display. The controller receives an information of the position of the vergence surface obtained through the gaze tracking device, performs an algorithm processing according to the information to obtain the offset, and transmits a display information including the offset to the display. An eye of the user focuses on an accommodation surface when viewing the image, and a position of the accommodation surface is different from a position of the virtual image surface.

Abstract: The present invention relates to expandable liver organoids, a medium composition for differentiation thereof, and a method for producing liver organoids using the same, and the liver organoids according to the present invention exhibit the characteristics of more mature hepatocytes than 2D differentiated hepatocytes, can be subcultured up to 90 times or more, and exhibit the expandability for maintaining the characteristics of mature hepatocytes even after multiple subcultures, and thus can be usefully utilized for predicting toxicity, regeneration, and inflammatory response, drug screening, and modeling of diseases such as hepatic steatosis.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes one or more interconnect dielectric layers arranged over a substrate. A bottom electrode is disposed over a conductive structure and extends through the one or more interconnect dielectric layers. A top electrode is disposed over the bottom electrode. A ferroelectric layer is disposed between and contacts the bottom electrode and the top electrode. The ferroelectric layer includes a first lower horizontal portion, a first upper horizontal portion arranged above the first lower horizontal portion, and a first sidewall portion and coupling the first lower horizontal portion to the first upper horizontal portion.

Abstract: A ferroelectric memory cell (FeRAM) is disclosed that includes an active device (e.g., a transistor) and a passive device (e.g., a ferroelectric capacitor) integrated in a substrate. The transistor and its gate contacts are formed on a front side of the substrate. A carrier wafer can be bonded to the active device to allow the active device to be inverted so that the passive device and associated contacts can be electrically coupled from a back side of the substrate.

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C?C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

Abstract: Introduced here are carrier tape assemblies that can improve efficiency and reduce costs when utilized in the handling, transport, or storage of semiconductor components. A carrier tape assembly can include an adhesive film affixed to an elongated and/or extruded carrier tape. For example, the adhesive film may be integrally laminated onto the top surface of the elongate carrier tape as a single continuous (i.e., unbroken) sheet. The adhesive film may substantially conform to the top surface of the elongate carrier tape, including any punched cavities for holding semiconductor components. Proper securement of the semiconductor components to the carrier tape assembly depends on the adhesive property of the constituent material(s) of the adhesive film.

Abstract: A semiconductor structure includes a gate structure over a substrate. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes a contact structure formed over the source/drain epitaxial structure. The structure also includes a first via structure formed over the contact structure. The structure also includes a metal line electrically connected to the first via structure. The structure also includes a spacer layer formed over the sidewall and over a portion of a top surface of the metal line. The structure also includes a second via structure formed over the metal line through the spacer layer.

Abstract: System and methods for hemp determination of a cannabis sample are disclosed. The systems and methods may include obtaining headspace data of cannabis samples using a gas chromatography/mass spectrometer (GC/MS) device. The data may then be transformed into images based on retention time, scan range, and signal intensities in the data for assessment by a convolutional network to determine whether a cannabis sample is hemp or non-hemp.

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: A polyhydric phenol resin is provided. The polyhydric phenol resin comprises a polyhydric phenol resin component and a first component. When the polyhydric phenol resin is characterized in a high-performance liquid chromatography (HPLC), the first component is eluted at a retention time ranging from 27.1 minutes to 28.0 minutes, and based on the total area of the chromatographic peaks of the polyhydric phenol resin, the area percentage of the chromatographic peak of the first component at the corresponding retention time in the spectrum ranges from 1.0% to 20%.