Abstract: A display device having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than the second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

Abstract: A method for silicon carbide ingot peeling includes the steps of: placing the silicon carbide ingot between first and second suckers; having a pressing head disposed on a top surface of the first sucker to apply mechanical oscillatory energy to both the silicon carbide ingot and the second sucker through the first sucker; and, having an elastic element disposed under the second sucker to absorb part of the mechanical oscillatory energy to transmit longitudinal waves thereof to a modified layer of the silicon carbide ingot for propagating individually intermittent invisible cracks at the modified layer to break silicon carbide chains at different levels. Till the cracks connect together for forming a continuous crack across the silicon carbide ingot, a top portion of the silicon carbide ingot is then separable therefrom to form a wafer. In addition, an apparatus for silicon carbide ingot peeling is also provided.

Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.

Abstract: A computing system generates a plurality of training data sets for generating the NLP model. The computing system trains a teacher network to extract and classify tokens from a document. The training includes a pre-training stage where the teacher network is trained to classify generic data in the plurality of training data sets and a fine-tuning stage where the teacher network is trained to classify targeted data in the plurality of training data sets. The computing system trains a student network to extract and classify tokens from a document by distilling knowledge learned by the teacher network during the fine-tuning stage from the teacher network to the student network. The computing system outputs the NLP model based on the training. The computing system causes the NLP model to be deployed in a remote computing environment.

Abstract: Electroencephalography (EEG) data may be analyzed to calculate various metrics such as maximum amplitude projection, node visit frequency, node transition frequency, and/or node transition polarity. The calculated metrics may be provided graphically in some examples. In some examples, the metrics may be provided graphically in combination with other data such as raw EEG traces.

Abstract: A light-emitting element includes a pair of electrodes, a first light-emitting unit, a second light-emitting unit, and a charge generation layer. The first light-emitting unit, between the pair of electrodes, and the first light-emitting unit, includes a first light-emitting layer. The second light-emitting unit, between the pair of electrodes, includes a second light-emitting layer. A first luminescent layer includes a first main body material, a second main body material, a first guest material, and a first auxiliary material, and the first main body material forms a first excimer complex with the second main body material. A first excited triplet state energy level of the first auxiliary material is lower than a first excited triplet state energy level of the first excimer complex, and the first excited triplet state energy level of the first auxiliary material is higher than that of the first guest material.

Abstract: Embodiments of the present invention provide isolated proteins comprising antigen binding domains that bind kallikrein related peptidase 2 (hK2), including monospecific and bispecific antibodies. Additional embodiments of the invention provide polynucleotides encoding the hk2-specific proteins, vectors, host cells, and methods of making and using them.

Abstract: An optical fingerprint recognition device includes a light-emitting diode (LED) array and a fingerprint sensing device. The LED array includes a central LED area and an edge LED area, and configured to display a light source pattern in response to a fingerprint sensing request. The light source pattern includes a central portion and a surrounding portion. During displaying the light source pattern, a plurality of red display subpixels of the central LED area are not illuminating and a plurality of red display subpixels of the edge LED area are illuminating. The fingerprint sensing device generates a first fingerprint image according to a plurality of first sensing signals obtained from a plurality of first sensing pixel area, and the first fingerprint image is adapted to be used for examining whether a finger which triggers the fingerprint sensing request is real or fake.

Abstract: The present invention relates to antibodies that specifically bind to one or more of IL-4, IL-13, IL-33, TSLP, and p40. The present invention further relates to antibodies that bind to one of IL-4, IL-13, IL-33, or TSLP. The invention further relates to multispecific antibodies that specifically bind to IL-4 and IL-13, and at least one other target. The present invention relates to multispecific antibodies that bind IL-4, IL-13, and one of IL-33, TSLP, or p40. The present invention also pertains to related molecules, e.g. nucleic acids which encode such antibodies or multispecific antibodies, compositions, and related methods, e.g., methods for producing and purifying such antibodies and multispecific antibodies, and their use in diagnostics and therapeutics.

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: Forms of (S)-2-hydroxy-6-((4-(2-(2-hydroxyethyl)nicotinoyl)morpholin-3-yl)methoxy)benzaldehyde (Compound I), or salts or solvates thereof, were prepared and characterized in the solid state. Also provided are processes of manufacture and methods of using the forms of Compound I.

Abstract: Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

Abstract: A dyeing method for functional contact lenses includes the following steps: providing a dry lens body, including hydrogel with 0-90% water content, silicone hydrogel with 0-90% water content, or a combination thereof; preparing an amphoteric polymethyl ether prepolymer, combining the amphoteric polymethyl ether prepolymer with a hydrophilic monomer to form a masking ring material, and attaching the masking ring material to an inner surface of the dry lens body to form a masking ring layer; dropping a colorant onto the inner surface, making the masking ring layer surround the colorant, irradiating the colorant with an ultraviolet light and then heating and fixing the colorant to form a dyed layer on the inner surface; and placing the dry lens body in water to hydrate and removing the masking ring layer to obtain a wet lens body.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. The individual memory cells comprise a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode electrically couples to the first source/drain region. Wordline structures extend elevationally through the insulative material and the memory cells of the vertically-alternating tiers. Individual of the gates that are in different of the memory cell tiers directly electrically couple to individual of the wordline structures. Sense-lines electrically couple to multiple of the second source/drain regions of individual of the transistors. Other embodiments are disclosed.

Abstract: Some embodiments include an integrated assembly containing a first structure which includes one or more transition metals, and containing a second structure over the first structure. The second structure has a first region directly against the first structure and has a second region spaced from the first structure by a gap region. The second structure includes semiconductor material having at least one element selected from Group 13 of the periodic table in combination with at least one element selected from Groups 15 and 16 of the periodic table. An ionic compound is within the gap region. Some embodiments include a method of forming an integrated assembly.

Abstract: A dual-input power switching system includes a first DC power source, a second DC power source, a DC conversion circuit, and a boost-up circuit. The first DC power source provides a first DC voltage, and the second DC power source provides a second DC voltage. The DC conversion circuit receives the first DC voltage or the second DC voltage being an input voltage, and converts the input voltage to supply power to a load. The boost-up circuit provides a hold-up voltage to boost up the input voltage when the first DC power source stops supplying power to lead to power drop of the input voltage, such that the input voltage reaches to a specific voltage that is greater than the second DC voltage and afterward naturally decreases to be less than or equal to the second DC voltage.

Abstract: Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

Abstract: A screen protector configured to be disposed on an attaching body on an electronic device in an attaching mode to correspondingly cover a display screen of the electronic device. The screen protector comprises a grating sheet and a first attaching member disposed vertically adjacent to each other side-by-side and coated between two outer cover films. The screen protector is disposed on the attaching body on the electronic device in an attaching mode through the attaching member, so that a viewing zone defined by the grating sheet correspondingly covers the display screen of the electronic device.

Abstract: A semiconductor structure comprises a substrate having a first well region of a first conductive type, a second well region of a second conductive type, and a junction between the first well region and the second well region. The first conductive type and the second conductive type are complementary. A plurality of first dummy structures and second dummy structures and at least a first active region are defined in the first well region by an isolation structure. The first dummy structures are adjacent to the junction and respectively comprise a first metal silicide region and a first doped region of the first conductive type and between the first metal silicide region and the first well region. The first dummy structures are between the second dummy structures and the junction. The second dummy structures respectively comprise a second metal silicide region that direct contacts the first well region.