Abstract: Some embodiments include an integrated assembly containing a first structure which includes one or more transition metals, and containing a second structure over the first structure. The second structure has a first region directly against the first structure and has a second region spaced from the first structure by a gap region. The second structure includes semiconductor material having at least one element selected from Group 13 of the periodic table in combination with at least one element selected from Groups 15 and 16 of the periodic table. An ionic compound is within the gap region. Some embodiments include a method of forming an integrated assembly.

Abstract: A tent assembly includes two tents spaced from each other in a longitudinal direction. Each tent includes a tent body supported by a tent frame to form a tent space. Each tent body includes two first tent canvases at front and rear ends thereof and spaced from each other in the longitudinal direction. Each tent body further includes two second tent canvases spaced from each other in a transverse direction. Each first tent canvas includes a first access opening. A connecting tent is connected between the two tents and includes a connecting tent body having two connecting tent canvases extending in the longitudinal direction and spaced from each other in the transverse direction. The connecting tent body is connected between two adjacent first tent canvases respectively of the two tents. The connecting tent includes a passageway connected between two adjacent first access openings respectively of the two tents.

Abstract: A transistor comprises a first conductive contact, a heterogeneous channel comprising at least one oxide semiconductor material over the first conductive contact, a second conductive contact over the heterogeneous channel, and a gate electrode laterally neighboring the heterogeneous channel. A device, a method of forming a device, a memory device, and an electronic system are also described.

Abstract: A semiconductor device includes a semiconductor substrate, a recess, a first gate oxide layer, and a gate structure. The semiconductor substrate includes a first region and a second region adjacent to the first region. The recess is disposed in the first region of the semiconductor substrate, and an edge of the recess is located at an interface between the first region and the second region. At least a part of the first gate oxide layer is disposed in the recess. The first gate oxide layer includes a hump portion disposed adjacent to the edge of the recess, and a height of the hump portion is less than a depth of the recess. The gate structure is disposed on the first region and the second region of the semiconductor substrate, and the gate structure overlaps the hump portion of the first gate oxide layer in a vertical direction.

Abstract: A computing system generates a plurality of training data sets for generating the NLP model. The computing system trains a teacher network to extract and classify tokens from a document. The training includes a pre-training stage where the teacher network is trained to classify generic data in the plurality of training data sets and a fine-tuning stage where the teacher network is trained to classify targeted data in the plurality of training data sets. The computing system trains a student network to extract and classify tokens from a document by distilling knowledge learned by the teacher network during the fine-tuning stage from the teacher network to the student network. The computing system outputs the NLP model based on the training. The computing system causes the NLP model to be deployed in a remote computing environment.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: An array of vertical transistors comprises spaced pillars of individual vertical transistors that individually comprise an upper source/drain region, a lower source/drain region, and a channel region vertically there-between. The upper source/drain region comprises a conductor oxide material in individual of the pillars. The channel region comprises an oxide semiconductor material in the individual pillars. The lower source/drain region comprises a first conductive oxide material in the individual pillars atop and directly against a second conductive oxide material in the individual pillars. Horizontally-elongated and spaced conductor lines individually interconnect a respective multiple of the vertical transistors in a column direction. The conductor lines individually comprise the second conductive oxide material atop and directly against metal material. The first conductive oxide material, the second conductive oxide material, and the metal material comprise different compositions relative one another.

Abstract: The present invention discloses a method for outputting a command by detecting a movement of an object, which includes the following steps. First, an image capturing device captures images generated by the movement of the object at different timings by. Next, a motion trajectory is calculated according to the plurality of images. Further next, a corresponding command is outputted according to the motion trajectory. The present invention also provides a system which employs the above-mentioned method.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. The individual memory cells comprise a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode electrically couples to the first source/drain region. Wordline structures extend elevationally through the insulative material and the memory cells of the vertically-alternating tiers. Individual of the gates that are in different of the memory cell tiers directly electrically couple to individual of the wordline structures. Sense-lines electrically couple to multiple of the second source/drain regions of individual of the transistors. Other embodiments are disclosed.

Abstract: A warning light control method includes the steps of: accepting multiple warning lights to receive a start command to set up Flash Mode and numbering each warning light sequentially starting from 1, and using Flash Mode number to synchronously set ID Number of each warning light; setting the ID Number of a predetermined warning light as Starter and the remaining ID Numbers as Receivers; the warning light of Starter receiving Start Command from Control Bus through cable, and sending Data, Clock Pulse and ID Information from Data Bus, and selecting one for flashing by Flash Mode; warning lights of Receivers get Data, Clock Pulse and ID Information from Data Bus through cables thereof, and warning lights of Receivers and Starter are flashing synchronously or asynchronously; whether Control Bus of Starter and Receivers has received Change ID Command.

Abstract: A screen protector configured to be disposed on an attaching body on an electronic device in an attaching mode to correspondingly cover a display screen of the electronic device. The screen protector comprises a grating sheet and a first attaching member disposed vertically adjacent to each other side-by-side and coated between two outer cover films. The screen protector is disposed on the attaching body on the electronic device in an attaching mode through the attaching member, so that a viewing zone defined by the grating sheet correspondingly covers the display screen of the electronic device.

Abstract: Light device control circuit includes signal processor; control circuit including control signal source and active switch, active switch having output end thereof electrically connected to control input side of the signal processor through control bus; data synchronization circuit including data signal source and another set of active switches, and the output end of the another set of active switches being electrically connected to data input side of signal processor through data bus, signal processor forming electrical connection with signal connection circuit by data output side to form signal and command synchronization between data input side and data output side; and warning light control IC connected to warning lights and forming electrical connection with data bus outside data output side, and transmitting data, clock pulse and ID information from data output side, so that the starter and the receivers select one of the flash modes to flash the light.

Abstract: Method of controlling warning lights to enter low power mode includes steps of: setting predetermined ID Number of warning lights as starter, and remaining ID numbers as receivers; warning light set as starter receiving start command from control bus through signal line, and sending data, clock pulse, and ID information from data bus, and choosing low power mode to flash; warning lights set as receivers obtaining data, clock pulse, and ID information from data bus through signal lines, and flash mode of receivers and starter flashing in low power mode, and active switch of control circuit that executes low power mode receiving low power command sent from starter and forming conductive state, and current-reducing resistor which is electrically connected to active switch reducing passing current to predetermined ratio, so that reduced current is transmitted to receivers and then starter executes low power mode and reduces brightness of warning lights.

Abstract: A warning light control method includes the steps of: accepting multiple warning lights to receive a start command to set up Flash Mode and numbering each warning light sequentially starting from 1, and using Flash Mode number to synchronously set ID Number of each warning light; setting the ID Number of a predetermined warning light as Starter and the remaining ID Numbers as Receivers; the warning light of Starter receiving Start Command from Control Bus through cable, and sending Data, Clock Pulse and ID Information from Data Bus, and selecting one for flashing by Flash Mode; warning lights of Receivers get Data, Clock Pulse and ID Information from Data Bus through cables thereof, and warning lights of Receivers and Starter are flashing synchronously or asynchronously; whether Control Bus of Starter and Receivers has received Change ID Command.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. The individual memory cells comprise a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode electrically couples to the first source/drain region. Wordline structures extend elevationally through the insulative material and the memory cells of the vertically-alternating tiers. Individual of the gates that are in different of the memory cell tiers directly electrically couple to individual of the wordline structures. Sense-lines electrically couple to multiple of the second source/drain regions of individual of the transistors. Other embodiments are disclosed.

Abstract: The present invention discloses a method for outputting a command by detecting a movement of an object, which includes the following steps. First, an image capturing device captures images generated by the movement of the object at different timings by. Next, a motion trajectory is calculated according to the plurality of images. Further next, a corresponding command is outputted according to the motion trajectory. The present invention also provides a system which employs the above-mentioned method.

Abstract: Some embodiments include an integrated assembly having a gate material, an insulative material adjacent the gate material, and a semiconductor oxide adjacent the insulative material. The semiconductor oxide has a channel region proximate the gate material and spaced from the gate material by the insulative material. An electric field along the gate material induces carrier flow within the channel region, with the carrier flow being along a first direction. The semiconductor oxide includes a grain boundary having a portion which extends along a second direction that crosses the first direction of the carrier flow. In some embodiments, the semiconductor oxide has a grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the semiconductor oxide. The carrier flow is within the intervening region and substantially parallel to the grain boundary. Some embodiments include methods of forming integrated assemblies.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: Systems, methods and apparatus are provided for a semiconductor structure. An example method includes a method for forming a contact surface on a vertically oriented access devices. The method includes forming a first source/drain region and a second source/drain region vertically separated by a channel region, forming a sacrificial etch stop layer on a first side of the second source/drain region, wherein the channel region is in contact with a second side of the second source/drain region, forming a dielectric layer on a first side of the sacrificial etch stop layer, where the second source/drain region is connected to a second side of the sacrificial etch stop layer, removing the dielectric layer using a first etch process to expose the sacrificial etch stop layer, and removing the sacrificial etch stop layer using a second etch process to form a contact surface on the second source/drain region.