Abstract: A computer-implemented method for solving low energy excitation spectrum and their corresponding eigenstates is provided. The eigenstates solved include ground state and single-fermion excited states. The method includes: calculating ground state and single-fermion excited states of a system and/or a sub-system of particles in isolation; calculating a coupling between fermions using a quantum mechanical hopping matrix elements between hybridized fermions and long range Coulomb and exchange interactions for a given charge and spin density; calculating a system free energy as a function of structural properties of molecules based on an energy spectrum that depends on positions of the particles and orientations of the particles, the positions being the center of charge for each of the particles; and simulating the systems of particles by integrating a time evolution of the structural properties using full quantum mechanical time evolution of a quantum state given the initial state.

Abstract: A mounting structure for a pickup bed cover is provided in this disclosure, which includes two mounting rods and a folding cover plate. The two mounting rods are in parallel, and the cover plate is fixed with the mounting rods together. The mounting structure for the pickup bed cover further includes a supporting rod, a first hinge seat and a second hinge seat. The first hinge seat is arranged on the mounting rods and the second hinge seat is arranged on the cover plate, one end of the supporting rod is fixedly hinged with the first hinge seat, and the other end of the supporting rod is detachably hinged with the second hinge seat. The disclosure has advantages as follows: with one end of the supporting rod being fixedly hinged and the other end of the supporting rod being detachably hinged, a stable mounting structure is obtained and it is more convenient to mount.

Abstract: An ultrasonic transducer includes a piezoelectric material layer, a first electrode layer, and a second electrode layer. The piezoelectric material layer has an ultrasonic wave emitting side and a back side opposite to the ultrasonic wave emitting side. The piezoelectric material layer has a protrusion structure or a recess structure on the back side. The protrusion structure or the recess structure overlaps a central axis of the piezoelectric material layer. The first electrode layer is disposed on the back side of the piezoelectric material layer. The second electrode layer is disposed on the ultrasonic wave emitting side of the piezoelectric material layer.

Abstract: A method for manufacturing a semiconductor device includes: forming a patterned structure on a substrate, the patterned structure including a dielectric layer and a dummy gate structure disposed in the dielectric layer; and subjecting the patterned structure to an ion implantation process so as to modulate a profile of the dummy gate structure.

Abstract: A system comprising one or more processors and one or more non-transitory computer-readable media storing computing instructions that, when executed on the one or more processors, cause the one or more processors to perform operations comprising: generating a schedule summary comprising one or more selectable portions of availability for drivers; receiving a selection of an unfilled portion of a respective schedule for a respective driver of the drivers adds the respective driver to a list of respective drivers to be scheduled on the schedule summary displayed on a GUI of an electronic device of a user; receiving one or more selections of the one or more selectable portions of availability of the schedule summary causes one or more changes to occur on the schedule summary displayed on the GUI of the electronic device of the user; and displaying one or more schedules for the drivers. Other embodiments are disclosed herein.

Abstract: The present disclosure discloses a multi-layer co-extrusion stone plastic floor. The multi-layer co-extrusion stone plastic floor includes at least one co-extrusion stone layer, the co-extrusion stone plastic layer including a first stable layer, a stone plastic rigid layer, and a second stable layer successively. A size change rate of the first stable layer and the second stable layer is within a range of 0 to 0.12% within a temperature range of ?15° C. to 80° C. At least one of the first stable layer, the stone plastic rigid layer, and the second stable layer includes composite particles of acrylate copolymer (ACR)/nano SiO2. The multi-layer co-extrusion stone plastic floor has improved strength, improved thermal stability and reduce thermal deformation by adding stable layers above/below the plastic rigid layer and adding the composite particles of ACR/nano SiO2.

Abstract: An electronic device may have optical components that each have first and second transparent layers such as first and second glass layers. The glass layers may have outer surfaces that face away from each other and inner surfaces that face towards each other. A polymer layer is formed between the inner surfaces of the glass layers. Along the periphery of each optical component, a hermetic seal is formed to protect the polymer material of the polymer layer. The seal may have a moisture barrier layer that is attached to the first and second glass layers. The moisture barrier layer may be supported by an elastomeric buffer member. The moisture barrier layer may be formed from metal film or a polymer layer or other substrate that is coated with a moisture-impermeable coating. The moisture-impermeable coating may be formed from one or more thin-film metal layers and/or one more thin-film dielectric layers.

Abstract: A driver circuit is for driving a GaN power commutation switch of a switch mode power converter. A sensing component is connected to the GaN switch for sensing a parameter such as a peak current of the power commutation. An energy storage component provides a certain turn on voltage between the gate and source of the GaN switch. The charging and discharging of the energy storage component is regulated, and the sensing is disabled with timing which is synchronized with the charging and discharging function of the energy storage component. It is prevented that a voltage across the sensing component reduces the generated gate-source drive voltage of the GaN switch.

Abstract: Often when there is a glare on a display screen the user may be able to mitigate the glare by tilting or otherwise moving the screen or changing their viewing position. However, when driving a car there are limited options for overcoming glares on the dashboard, especially when you are driving for a long distance in the same direction. Embodiments are directed to eliminating such glare. Other embodiments are related to mixed reality (MR) and filling in occluded areas.

Abstract: Embodiments of the present disclosure provide a connection processing method and apparatus, an electronic device, and a computer-readable storage medium. The connection processing method includes: initializing, in response to receiving a first connection request from a source device, an abnormality processing policy; transmitting first connection information to a target device of the first connection request; transmitting, in response to receiving a first connection information confirmation message transmitted by the target device, a first connection confirmation message to the source device; generating the abnormality processing policy; transmitting a first notification to the target device, the first notification including the abnormality processing policy; and transmitting a second notification to the source device, the second notification including the abnormality processing policy.

Abstract: Embodiments of the present disclosure generally relate to methods of modifying and engineering the effective thickness of an optical device substrate. The methods provide for depositing a material that is index-matched to the substrate to alter a thickness distribution of the optical device. By adjusting the thickness distribution, the optical path of light is modulated to direct the light to the output coupling grating.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip a first undoped layer overlies a substrate. A first barrier layer overlies the first undoped layer and has a first thickness. A first doped layer overlies the first barrier layer and is disposed laterally within an n-channel device region of the substrate. A second barrier layer overlies the first barrier layer and is disposed within a p-channel device region that is laterally adjacent to the n-channel device region. The second barrier layer has a second thickness that is greater than the first thickness. A second undoped layer overlies the second barrier layer. A second doped layer overlies the second undoped layer. The second undoped layer and the second doped layer are disposed within the p-channel device region.

Abstract: A silicon carbide semiconductor device includes a drift layer, a first doped region, a second doped region, a gate trench, a third doped region and a gate electrode. The drift layer is disposed on a SiC substrate. The first doped region is disposed on the drift layer. The second doped region is disposed on the first doped region. The gate trench is extended from an upper surface of the second doped region through the first doped region and into the drift layer. The gate trench is formed in a manner dividing the drift layer into a plurality of mesas encircled by the gate trench, each of the mesas comprises a center portion and a plurality of leg portions extended from the center portion. The third doped region is arranged in the center portion of the mesa, and is disposed in the first doped region and adjacent to the second doped region. The gate electrode is arranged in the gate trench and dielectrically insulated from the first doped region, the second doped region and the drift layer by a gate insulator.

Abstract: The present disclosure relates to an integrated chip including a semiconductor layer and a photodetector disposed along the semiconductor layer. A color filter is over the photodetector. A micro-lens is over the color filter. A dielectric structure comprising one or more dielectric layers is over the micro-lens. A receptor layer is over the dielectric structure. An optical signal enhancement structure is disposed along the dielectric structure and between the receptor layer and the micro-lens.

Abstract: The present disclosure discloses a method and an Internet of Things system for liquefied natural gas (LNG) management linked with warehousing, transportation, and a smart terminal.

Abstract: An information retrieval method includes obtaining Mi (i+1)th-hop candidate documents based on a retrieval text query and Ki ith-hop candidate documents; obtaining a score of each candidate document in the Mi (i+1)th-hop candidate documents; obtaining, based on a score of a candidate document Pjy(i+1) and a probability of a path L, a probability of a path corresponding to the candidate document Pjy(i+1); obtaining K(i+1) (i+1)th-hop candidate documents based on probabilities of paths respectively corresponding to the Mi (i+1)th-hop candidate documents; and obtaining, based on the K(i+1) (i+1)th-hop candidate documents, a retrieval result corresponding to the query.

Abstract: An LBM package and method for packaging an LBM using a stamped metallic mirror array that folds light beams, correct beam shapes, fold and/or redirect beam propagations. The mirror array can be integrated or assembled inside an LBM to provide beam shaping and redirection of the high-power beams near the laser diode. The LBM incorporates a stamped metallic freeform mirror or reflector with an off-axis parabolic shape is configured to fold and collimate laser beam. A precision stamping process is deployed to produce an array of miniature, freeform mirrors in high volume applications. The mirror array simplifies the optical path and eliminates passive components such as refractive lenses and dichroic filters that combine RGB beams. Stamped metallic optical components with micro-scale freeform mirrors in the LBM are tolerant of high temperatures and can thermally diffuse heat away from the reflective surface for high power applications.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

Abstract: Disclosed are an intelligent replenishment monitoring system and method. The intelligent replenishment monitoring system includes at least one image capture device and a computing device. The image capture device captures at least one shelf to generate a shelf image. The computing device is in signal connection to the image capture device to receive the shelf image. The computing device performs first-stage identification on the shelf image according to a commodity region positioning model, to identify a commodity region image from the shelf image. The computing device performs second-stage identification on the commodity region image according to the at least one commodity replenishment model, to obtain commodity information corresponding to the commodity region image, and generates replenishment information according to the commodity information, so that a staff member replenishes the commodities according to the replenishment information.

Abstract: A secondary battery includes a positive electrode plate and a negative electrode plate. The negative electrode plate includes a negative electrode current collector, a negative electrode active material layer provided on at least one surface of the negative electrode current collector, and an insulation layer and a reaction layer sequentially provided on a surface of the negative electrode active material layer on a side opposite to the negative electrode current collector. The reaction layer includes at least one of graphite, silicon, silicon oxide, silicon suboxide, tin oxide, copper oxide, or zinc oxide. A capacity per unit area, A1 (mAh/cm2), of a positive electrode active material layer in the positive electrode plate and a capacity per unit area, B1 (mAh/cm2), of the negative electrode active material layer in the negative electrode plate satisfy B1/A1<1.